Search Results1-12 of  12

  • KAKITSUKA Takaaki ID: 9000001506926

    NTT Photonics Laboratories (2011 from CiNii)

    Articles in CiNii:2

    • Current and Wavelength Characteristics of Polarization-Insensitive SOAs with Strained-Bulk Active Layers (2001)
    • Monolithically Integrated Wavelength-Routing Switch Using Tunable Wavelength Converters with Double-Ring-Resonator Tunable Lasers (2011)
  • KAKITSUKA Takaaki ID: 9000004905000

    Articles in CiNii:63

    • 10Gbit/s error-free, non-despersion-compensated transmission over 180km using a monolithically integrated electro-absorption modulator and a directly-frequency-modulated DFB laser (2011)
    • All-optical memory based on compound-semiconductor photonic crystal nanocavity (2008)
    • All-optical memory based on compound-semiconductor photonic crystal nanocavity (2008)
  • KAKITSUKA Takaaki ID: 9000016373665

    Photonics Laboratories, NTT Corporation (2008 from CiNii)

    Articles in CiNii:1

    • Enhanced Temperature Characteristics of InGaAs/InAlGaAs Multi-Quantum-Well Lasers on Low-In-Content InGaAs Ternary Substrates (2008)
  • KAKITSUKA Takaaki ID: 9000017684274

    NTT Photonics Laboratories, NTT Corporation (2009 from CiNii)

    Articles in CiNii:1

    • High-Speed Frequency Modulated DBR Lasers for Long-Reach Transmission (2009)
  • KAKITSUKA Takaaki ID: 9000107381262

    NTT Photonics Laboratories, NTT Corporation (2012 from CiNii)

    Articles in CiNii:1

    • High-Temperature Operation of Photonic-Crystal Lasers for On-Chip Optical Interconnection (2012)
  • KAKITSUKA Takaaki ID: 9000107388655

    NTT Photonics Laboratories, NTT Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Transition Energy Control via Strain in Single Quantum Dots Embedded in Micromachined Air-Bridge (2004)
  • KAKITSUKA Takaaki ID: 9000345337077

    NTT Device Technology Labs., NTT Corporation|NTT Nanophotonics Center, NTT Corporation (2017 from CiNii)

    Articles in CiNii:1

    • Evaluation of Device Parameters for Membrane Lasers on Si Fabricated with Active-Layer Bonding Followed by Epitaxial Growth (2017)
  • KAKITSUKA Takaaki ID: 9000351506595

    Articles in CiNii:1

    • Renormalization Group Analysis of U(2) Gauge Theory with θ-Term in 2 Dimensions (1997)
  • KAKITSUKA Takaaki ID: 9000396112982

    NTT Device Technology Laboratories, NTT Corporation|NTT Nanophotonics Center, NTT Corporation (2018 from CiNii)

    Articles in CiNii:1

    • Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers (2018)
  • Kakitsuka Takaaki ID: 9000025118536

    Articles in CiNii:1

    • Numerical Demonstration of Wavelength-Insensitive Tuning Characteristics of Ladder-Type Tunable Filter for a Widely Tunable Laser Diode (2006)
  • Kakitsuka Takaaki ID: 9000401564407

    Articles in CiNii:1

    • Enhanced Temperature Characteristics of InGaAs/InAlGaAs Multi-Quantum-Well Lasers on Low-In-Content InGaAs Ternary Substrates (2008)
  • Kakitsuka Takaaki ID: 9000402238175

    Articles in CiNii:1

    • 2019-03-27 (2019)
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