Search Results1-20 of  49

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  • KAKIUCHI Hiroaki ID: 9000404508318

    Division of Precision Science & Technology and Applied Physics, Graduate School of Engineering, Osaka University (2007 from CiNii)

    Articles in CiNii:1

    • Low-temperature and high-rate growth of epitaxial silicon by atmospheric-pressure plasma chemical vapor deposition (2007)
  • KAKIUCHI Hiroaki ID: 1000010233660

    Articles in CiNii:67

    • 大気圧RFプラズマの特性 (1995)
    • ラジカルソースMBE法を用いたSi(111)基板上AIN薄膜のエピタキシャル成長 (1995)
    • 回転電極を用いた高圧力プラズマCVDによるSi薄膜の高速成膜に関する研究(第1報) -成膜装置の試作とその成膜特性- (1996)
  • KAKIUCHI Hiroaki ID: 9000000067103

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:7

    • Low Temperature Growth of InGaAs/GaAs Strained-Layer Single Quantum Wells (1997)
    • Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching (2004)
    • Influence of H_2/SiH_4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD (2005)
  • KAKIUCHI Hiroaki ID: 9000000847496

    Second Department of Pathology, Nihon University School of Medicine (1995 from CiNii)

    Articles in CiNii:1

    • Study of Atherosclerosis Regression in the Elderly : Central Depression and its Correlation to Ulcerated Plaques (1995)
  • KAKIUCHI Hiroaki ID: 9000020759439

    Articles in CiNii:1

    • Quantum Size Effects of a-Si(:H)/a-SiC(:H) Multilayer Films Prepared by rf Sputtering. (1994)
  • KAKIUCHI Hiroaki ID: 9000020798514

    Articles in CiNii:1

    • Microstructure of a-Si/a-SiC Multilayer Films Prepared by rf Sputtering. (1994)
  • KAKIUCHI Hiroaki ID: 9000107340750

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode (2006)
  • KAKIUCHI Hiroaki ID: 9000107340785

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H_2/He or H_2/Ar Mixture (2006)
  • KAKIUCHI Hiroaki ID: 9000107384311

    Articles in CiNii:1

    • Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei (2008)
  • KAKIUCHI Hiroaki ID: 9000107388600

    Department of Precision Science and Technology, Osaka University (2004 from CiNii)

    Articles in CiNii:1

    • Visible Light Irradiation Effects on STM Observations of Hydrogenated Amorphous Silicon Surfaces (2004)
  • KAKIUCHI Hiroaki ID: 9000107390284

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Structural Characterization of Polycrystalline 3C-SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane (2006)
  • KAKIUCHI Hiroaki ID: 9000255912472

    東京大学生産技術研究所 (1991 from CiNii)

    Articles in CiNii:1

    • Geologic Structure Survey and Lineament Evaluation in Nouthern part of Gifu Prefecture Based on SAR Image. (1991)
  • KAKIUCHI Hiroaki ID: 9000255912478

    東京大学生産技術研究所 (1991 from CiNii)

    Articles in CiNii:1

    • A Study on Flood Risk Evaluation in Bangladesh using Remote Sensing and GIS (1991)
  • KAKIUCHI Hiroaki ID: 9000345292855

    大阪大学 (2016 from CiNii)

    Articles in CiNii:1

    • Plasma-Enhanced Chemical Vapor Deposition (2016)
  • Kakiuchi Hiroaki ID: 9000024113150

    Articles in CiNii:1

    • Reduction of titanium oxide in the presence of nickel by nonequilibrium hydrogen gas (2009)
  • Kakiuchi Hiroaki ID: 9000025015468

    Articles in CiNii:1

    • Purified silicon film formation from metallurgical-grade silicon by hydrogen-plasma-induced chemical transport (Special issue: Plasma processing) (2011)
  • Kakiuchi Hiroaki ID: 9000025094918

    Articles in CiNii:1

    • SiO2 formation by oxidation of crystalline and hydrogenated amorphous Si in atmospheric pressure plasma excited by very high frequency power (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and related materials) (2008)
  • Kakiuchi Hiroaki ID: 9000025096004

    Articles in CiNii:1

    • High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells Using Very High Frequency Plasma at Atmospheric Pressure (Special Issue: Solid State Devices & Materials) (2006)
  • Kakiuchi Hiroaki ID: 9000025096009

    Articles in CiNii:1

    • Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode (Special Issue: Solid State Devices & Materials) (2006)
  • Kakiuchi Hiroaki ID: 9000025097074

    Articles in CiNii:1

    • Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition (Special Issue: Solid State Devices & Materials) (2006)
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