Search Results1-20 of  28

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  • KANAMOTO Kyozo ID: 9000002169037

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2005 from CiNii)

    Articles in CiNii:1

    • High Power operation of GaN-based laser diode with high slope efficiency (2005)
  • KANAMOTO Kyozo ID: 9000004788132

    The Femtosecond Technology Research Association (2005 from CiNii)

    Articles in CiNii:6

    • Control of photonic crystal structure for practical application : Realization of ultrasmall and ultrafast all-optical switch (2005)
    • Ultra-fast photonic crystal/quantum dot all-optical switch for future photonic networks (2005)
    • Ultra-fast photonic crystal/quantum dot all-optical switch for future photonic networks (2005)
  • KANAMOTO Kyozo ID: 9000004840630

    Femtosecond Technology Research Association (FESTA) (2004 from CiNii)

    Articles in CiNii:4

    • Two Dimensional Semiconductor-Based Photonic Crystal Slab Waveguides for Ultra-Fast Optical Signal Processing Devices (2004)
    • Single Photonic-Crystal Defect Switch for All-Optical Ultrafast Operation Using Two Photon Absorption (2004)
    • Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films (1994)
  • KANAMOTO Kyozo ID: 9000005716258

    Mitsubishi Electric Co., Ltd., (1994 from CiNii)

    Articles in CiNii:1

    • Highly Uniform GaAs/AIAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy (1994)
  • KANAMOTO Kyozo ID: 9000005842185

    Sendai Research Center, Telecommunications Advancement Organization:Depanment of Materials Science, Greduate Sbhool of Engineering, Tohoku University (2001 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Formation of Thin-Gate SiO_2 Films by the Ultrahigh-Vacuum Chemical Vapor Deposition with Reduced Subcutaneous Oxidation Using Remote-Plasma-Activated Oxygen and Si_2H_6 (2001)
  • Kanamoto Kyozo ID: 9000003429997

    Advanced Technology R&D Center, Mitsubishi Electric Corp. (2005 from CiNii)

    Articles in CiNii:4

    • Transient reflection from GaAs thin film structures (2001)
    • High-efficient and high-power GaN-based blue-violet laser diodes (2005)
    • High-efficient and high-power GaN-based blue-violet laser diodes (2005)
  • Kanamoto Kyozo ID: 9000252763751

    Central Research Laboratory, Mitsubishi Electric Corp. (1991 from CiNii)

    Articles in CiNii:1

    • Step-Promoted Surface Reconstruction on Ga-Deposited (100) GaAs During Molecular Beam Epitaxy with Alternating Supply of Ga and As (1991)
  • Kanamoto Kyozo ID: 9000252958178

    Central Research Laboratory, Mitsubishi Electric Corporation (1986 from CiNii)

    Articles in CiNii:1

    • On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy (1986)
  • Kanamoto Kyozo ID: 9000252961547

    Optoelectronics Joint Research Laboratory (1987 from CiNii)

    Articles in CiNii:1

    • DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH<SUB>3</SUB> (1987)
  • Kanamoto Kyozo ID: 9000252970825

    Central Research Laboratory, Mitsubishi Electric Corporation (1989 from CiNii)

    Articles in CiNii:1

    • Photoluminescence of a Novel Hetero <I>n</I>-<I>i</I>-<I>p</I>-<I>i</I> Structure Incorporating Triple Quantum Wells (1989)
  • Kanamoto Kyozo ID: 9000252979508

    Central Research Laboratory, Mitsubishi Electric Corporation (1991 from CiNii)

    Articles in CiNii:1

    • Room-Temperature Self-Electrooptic Effects of GaAs/AlAs Asymmetric Coupled Quantum Wells (1991)
  • Kanamoto Kyozo ID: 9000258120644

    Mitsubishi Electric Co., Ltd., Tsukaguchi–Honmachi, 8–1–1, Amagasaki 661 (1994 from CiNii)

    Articles in CiNii:1

    • Highly Uniform GaAs/AlAs Quantum Wires Grown on (001) Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy. (1994)
  • Kanamoto Kyozo ID: 9000258124042

    Semiconductor Research Laboratory, MITSUBISHI Electric Corporation, Amagasaki, Hyogo 661 (1994 from CiNii)

    Articles in CiNii:1

    • Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films. (1994)
  • Kanamoto Kyozo ID: 9000258154574

    Sendai Research Center, Telecommunications Advancement Organization, 519-1176 Aramaki Aza-Aoba, Aoba-ku, Sendai 980-0868, Japan|Department of Materials Science, Graduate School of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Formation of Thin-Gate SiO2 Films by the Ultrahigh-Vacuum Chemical Vapor Deposition with Reduced Subcutaneous Oxidation Using Remote-Plasma-Activated Oxygen and Si2H6. (2001)
  • Kanamoto Kyozo ID: 9000392703498

    Articles in CiNii:1

    • DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH<SUB>3</SUB> (1987)
  • Kanamoto Kyozo ID: 9000392706502

    Articles in CiNii:1

    • On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy (1986)
  • Kanamoto Kyozo ID: 9000392724031

    Articles in CiNii:1

    • Photoluminescence of a Novel Hetero <I>n</I>-<I>i</I>-<I>p</I>-<I>i</I> Structure Incorporating Triple Quantum Wells (1989)
  • Kanamoto Kyozo ID: 9000392727190

    Articles in CiNii:1

    • Room-Temperature Self-Electrooptic Effects of GaAs/AlAs Asymmetric Coupled Quantum Wells (1991)
  • Kanamoto Kyozo ID: 9000401600169

    Articles in CiNii:1

    • On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy (1986)
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