Search Results1-20 of  108

  • Kanayama Toshihiko ID: 9000009564168

    Articles in CiNii:1

    • Nanolithography Using Fullerene Films as an Electron Beam Resist (1997)
  • Kanayama Toshihiko ID: 9000009564971

    Articles in CiNii:1

    • Functionalization of Fullerene for Electron Beam Nanolithography Resist (1998)
  • Kanayama Toshihiko ID: 9000009566033

    Articles in CiNii:1

    • Improved Sensitivity of Multi-Adduct Derivatives of Fullerene (2001)
  • KANAYAMA Toshihiko ID: 9000000661359

    Articles in CiNii:3

    • 半導体MIRAIプロジェクトとナノテクノロジー (2002)
    • 次世代半導体材料・プロセス基盤技術の開発--半導体MIRAIプロジェクト (OHM創刊90周年特集 日本の産業再生に向けて(第2弾)) (2004)
    • トランジスタ微細化・高性能化のための計測解析技術 (特集 半導体製造分野の計測・解析・試験技術) (2005)
  • KANAYAMA Toshihiko ID: 9000001630619

    MIRAI, Advanced Semiconductor Research Center (ASRC) (2005 from CiNii)

    Articles in CiNii:2

    • Impact of Aggressively Shallow Source/Drain Extensions on Device Performance (2005)
    • Impact of Aggressively Shallow Source/Drain Extensions on the Device Performance (2004)
  • KANAYAMA Toshihiko ID: 9000001658933

    特許業務法人はるか国際特許事務所パートナー (2004 from CiNii)

    Articles in CiNii:1

    • Worldwide Development of Intellectual Property System and Its Use : Focusing on Patent System (2004)
  • KANAYAMA Toshihiko ID: 9000001676249

    Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology (2011 from CiNii)

    Articles in CiNii:3

    • Scanning Tunneling Microscopy Observation of Individual Boron Dopant Atoms beneath Si(001)-2×1 Surfaces (2005)
    • Dopant-atom distribution measurement at p-n junctions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy (2006)
    • Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy (2011)
  • KANAYAMA Toshihiko ID: 9000005546069

    Articles in CiNii:2

    • Transmittance and waveguide properties of photonic crystal made of silicon nanopillars (日本電子顕微鏡学会第46回シンポジウム 材料のナノ・生物のナノ) -- (ポスターセッション "7th International Symposium on Advanced physical Fields(APF-7)"との合同セッション) (2001)
    • Fabrication of Photonic Crystals Consisting of Si Nanopillars by Plasma Etching Using Self-Formed Masks (1999)
  • KANAYAMA Toshihiko ID: 9000005623984

    Electrotechnical Lanoratory (1989 from CiNii)

    Articles in CiNii:1

    • SOI Formation Using Lateral Solid-Phase Epitaxy Induced by Focused Ion Beam : Beam Induced Physics and Chemistry : (1989)
  • KANAYAMA Toshihiko ID: 9000005653179

    Electrotechnical Laboratory:Joint Research Center for Atom Technology (JRCAT), National Institute for Advanced Interdisciplinary Research (1994 from CiNii)

    Articles in CiNii:1

    • Ion Trapping by External Field of AC Electrical Quadrupole Superimposed on Static Attraction (1994)
  • KANAYAMA Toshihiko ID: 9000005671710

    Joint Research Center for Atom Technology (JRCAT), National Institute for Advanced Interdisciplinary Research (1996 from CiNii)

    Articles in CiNii:1

    • Nanolithography Using Fullerene Films as an Electron Beam Resist (1996)
  • KANAYAMA Toshihiko ID: 9000005678670

    Joint Research Center for Atom Technology (JRCAT), National Institute for Advanced Interdisciplinary Research (1997 from CiNii)

    Articles in CiNii:1

    • Injection of Mass-Selected Ions into a Quadrupole Ion Trap (1997)
  • KANAYAMA Toshihiko ID: 9000005734341

    Joint Research Center for Atom Technology (JRCAT), National Institute for Advanced Interdisciplinary Research:Electrotechnical Laboratory (1995 from CiNii)

    Articles in CiNii:1

    • Scratch Lithography of 10nm Silicon Structures (1995)
  • KANAYAMA Toshihiko ID: 9000006034780

    National Institute of Advanced Industrial Science and Technology (2006 from CiNii)

    Articles in CiNii:4

    • シリコン半導体技術とナノテクノロジー--電子機器の超高機能化を実現するナノレベル材料制御 (特集 ナノテクノロジーの最新開発動向) (2004)
    • 23pB04 Scale up of a Non-neutral Plasma Trap-1. The plasma scientific experiment of Kanayama-Trap (2004)
    • 25pA02P Scale up of a Non-neutral Plasma Trap : Study of modification for experiment (2004)
  • KANAYAMA Toshihiko ID: 9000015563761

    MIRAI Project, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Observation of Hydrogenated Silicon Clusters Si_6H_x with Controlled Hydrogen Content on Si (111)-(7×7) Surfaces (2003)
  • KANAYAMA Toshihiko ID: 9000016376241

    Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology (2008 from CiNii)

    Articles in CiNii:1

    • Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters (2008)
  • KANAYAMA Toshihiko ID: 9000018777768

    National Institute of Advanced Industrial Science and Technology (2011 from CiNii)

    Articles in CiNii:1

    • Scanning Probe Microscopy in Semiconductor Industry (2011)
  • KANAYAMA Toshihiko ID: 9000107315433

    National Institute of Advanced Industrial Science and Technology (2011 from CiNii)

    Articles in CiNii:1

    • Device Simulation of STM Carrier Profiling (2011)
  • KANAYAMA Toshihiko ID: 9000107347651

    Advanced Semiconductor Research Center, National Institute for Advanced Industrial Science and Technology (2007 from CiNii)

    Articles in CiNii:1

    • Ultrathin Layered Semiconductor : Si-Rich Transition Metal Silicide (2007)
  • KANAYAMA Toshihiko ID: 9000107348754

    Joint Research Center for Atom Technology-National Institute of Advanced Industrial Science and Technology (JRCAT-AIST) (2003 from CiNii)

    Articles in CiNii:1

    • A Quadrupole Ion Trap as Low-Energy Cluster Ion Beam Source (2003)
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