Search Results1-20 of  25

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  • Kanechika Masakazu ID: 9000025121036

    Articles in CiNii:1

    • A vertical insulated gate AlGaN/GaN heterojunction field-effect transistor (2007)
  • Kanechika Masakazu ID: 9000241499601

    Articles in CiNii:1

    • Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors (Special Issue : Solid State Devices and Materials) (2013)
  • KANECHIKA Masakazu ID: 9000001884813

    Toyota Central R&D Laboratories, Inc. (2008 from CiNii)

    Articles in CiNii:2

    • Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method (2007)
    • GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching (2008)
  • KANECHIKA Masakazu ID: 9000003354871

    Faculty of Engineering Hiroshima University (1991 from CiNii)

    Articles in CiNii:1

    • Theory of Tunneling in Double Barrier (1991)
  • KANECHIKA Masakazu ID: 9000005845739

    TOYOTA Central R&D Laboratories, Inc. (2000 from CiNii)

    Articles in CiNii:1

    • Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching and Their Field Emission Current Characteristics (2000)
  • KANECHIKA Masakazu ID: 9000006461397

    TOYOTA Central R&D Laboratories, Inc. (2002 from CiNii)

    Articles in CiNii:1

    • A Gated Field Emission Triode Using Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching (2002)
  • KANECHIKA Masakazu ID: 9000107340993

    TOYOTA Central R&D Laboratories, Inc. (2004 from CiNii)

    Articles in CiNii:1

    • Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions (2004)
  • KANECHIKA Masakazu ID: 9000359197867

    Toyota Central R&D Labs., Inc. (2011 from CiNii)

    Articles in CiNii:22

    • Excess carrier lifetime measurement in GaN etched by ICP with the μ-PCD method (2005)
    • Excess carrier lifetime measurement in GaN etched by ICP with the μ-PCD method (2005)
    • Excess carrier lifetime measurement in GaN etched by ICP with the μ-PCD method (2005)
  • Kanechika Masakazu ID: 9000003202542

    Department of Engineering.Hiroshima University (1992 from CiNii)

    Articles in CiNii:2

    • 26p-ZB-5 Tunneling Phenomena in Double Barrier (1991)
    • 28a-B-5 Space-Charge Distribution and Phase Shift in Resonant Tunneling Double Barrier Structures (1992)
  • Kanechika Masakazu ID: 9000003435610

    Faculty of Engineering, Hroshima University (1990 from CiNii)

    Articles in CiNii:1

    • Theory of Double Barrier Tunnelling (1990)
  • Kanechika Masakazu ID: 9000014363274

    Department of Engineering,Hiroshima University (1991 from CiNii)

    Articles in CiNii:1

    • 30p-ZK-5 Tunneling Processes of Double Barrier (1991)
  • Kanechika Masakazu ID: 9000254139021

    Faculty of Engineering Hiroshima University (1991 from CiNii)

    Articles in CiNii:1

    • Theory of Tunneling in Double Barrier (1991)
  • Kanechika Masakazu ID: 9000258149936

    TOYOTA Central R&D Laboratories, Inc., 41-1 Aza Yokomichi, Oaza Nagakute, Nagakute-cho, Aichi 480-1192, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching and Their Field Emission Current Characteristics. (2000)
  • Kanechika Masakazu ID: 9000258161591

    TOYOTA Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan (2002 from CiNii)

    Articles in CiNii:1

    • A Gated Field Emission Triode Using Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching. (2002)
  • Kanechika Masakazu ID: 9000258174454

    TOYOTA Central R&D Laboratories, Inc. (2004 from CiNii)

    Articles in CiNii:1

    • Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions (2004)
  • Kanechika Masakazu ID: 9000401564057

    Articles in CiNii:1

    • GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching (2008)
  • Kanechika Masakazu ID: 9000401693193

    Articles in CiNii:1

    • Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching and Their Field Emission Current Characteristics (2000)
  • Kanechika Masakazu ID: 9000401706808

    Articles in CiNii:1

    • A Gated Field Emission Triode Using Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching (2002)
  • Kanechika Masakazu ID: 9000401727526

    Articles in CiNii:1

    • Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions (2004)
  • Kanechika Masakazu ID: 9000401765749

    Articles in CiNii:1

    • A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor (2007)
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