Search Results1-20 of  96

  • 1 / 5
  • Kanemaru Seigo ID: 9000025058397

    Articles in CiNii:1

    • Fabrication of a field emitter array with a built-in einzel lens (Special issue: Microprocesses and nanotechnology) (2009)
  • KANEMARU Seigo ID: 9000001922256

    National Institute of Advanced Industrial Science and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Application of the emitter, and the technical subject (2003)
  • KANEMARU Seigo ID: 9000004746050

    National Institute of Advanced Industrial Science & Technology (2010 from CiNii)

    Articles in CiNii:62

    • Fabrication of Integrated Field Emitters (1998)
    • フィールドエミッションディスプレイ(FED) (1999)
    • Application of nanofabrication technology to vacuum microelectronics (1998)
  • KANEMARU Seigo ID: 9000005542184

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2009 from CiNii)

    Articles in CiNii:28

    • General Analytical Relationship for Electric Field of Gated Field Emitters (2005)
    • Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers (1998)
    • Focusing Characteristics of Double-Gated Field-Emitter Arrays with a Lower Height of the Focusing Electrode (2008)
  • KANEMARU Seigo ID: 9000005623983

    Electrotechnical Lanoratory (1989 from CiNii)

    Articles in CiNii:1

    • SOI Formation Using Lateral Solid-Phase Epitaxy Induced by Focused Ion Beam : Beam Induced Physics and Chemistry : (1989)
  • KANEMARU Seigo ID: 9000020193372

    Electrotechnical Laboratory (1991 from CiNii)

    Articles in CiNii:1

    • Field Emitter Array and Its Application. (1991)
  • KANEMARU Seigo ID: 9000107306265

    Nanoelectronics Research Institute, AIST (2003 from CiNii)

    Articles in CiNii:1

    • Programmable Conductivity of Silicon Nanowires with Side Gates by Surface Charging (2003)
  • KANEMARU Seigo ID: 9000107306342

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE) (2003)
  • KANEMARU Seigo ID: 9000107314537

    Nanoelectronics Research Institute (2004 from CiNii)

    Articles in CiNii:1

    • Modeling of Focused Carbon Nanotube Array Emitters for Field-Emission Displays (2004)
  • KANEMARU Seigo ID: 9000107324992

    Articles in CiNii:1

    • FEA fabrication technique based on ion-induced bending (IIB) phenomenon (2009)
  • KANEMARU Seigo ID: 9000107325298

    Articles in CiNii:1

    • Fabrication and measurement of FEA with a built-in electrostatic lens (2009)
  • KANEMARU Seigo ID: 9000107334830

    Electrotechnical Laboratory (2001 from CiNii)

    Articles in CiNii:1

    • Charging Damage of Silicon-on-Insulator (SOI) Wafer Determined by Scanning Maxwell-Stress Microscopy (2001)
  • KANEMARU Seigo ID: 9000107334963

    National Institute of Advanced Industrial Science and Technology, Electronics Lab. (2001 from CiNii)

    Articles in CiNii:1

    • Electron Motion Three-Dimensional Confinement for Microelectronic Vacuum Gauges with Field Emitters (2001)
  • KANEMARU Seigo ID: 9000107338642

    Nanoelectronics Research Institute, AIST (2004 from CiNii)

    Articles in CiNii:1

    • Modeling of Optimized Field Emission Nanotriodes with Aligned Carbon Nanotubes of Variable Heights (2004)
  • KANEMARU Seigo ID: 9000107350191

    National Institute of Advanced Industrial Science and Technology (2004 from CiNii)

    Articles in CiNii:1

    • Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays (2004)
  • KANEMARU Seigo ID: 9000107374770

    National Institute of Advanced Industrial Science and Technology (2005 from CiNii)

    Articles in CiNii:1

    • Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor (2005)
  • KANEMARU Seigo ID: 9000107377972

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication (2003)
  • KANEMARU Seigo ID: 9000107388932

    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2004 from CiNii)

    Articles in CiNii:1

    • P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs (2004)
  • KANEMARU Seigo ID: 9000253326918

    Electron Devices Division, Electrotechnical Laboratory (1998 from CiNii)

    Articles in CiNii:1

    • Application of nanofabrication technology to vacuum microelectronics (1998)
  • KANEMARU Seigo ID: 9000253648813

    Electrochemical Laboratory (1996 from CiNii)

    Articles in CiNii:1

    • Field Emission Phenomena and Applications. Emission Characteristics of Silicon Field Emitter Array. (1996)
  • 1 / 5
Page Top