Search Results21-40 of  96

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  • KANEMARU Seigo ID: 9000257982409

    National Institute of Advanced Industrial Science and Technology, Nanoelectronics Research Institute (2002 from CiNii)

    Articles in CiNii:1

    • Recent Developments of Field-Emission Research. Improvement of Silicon Field Emitters by Surface Modification. (2002)
  • Kanemaru Seigo ID: 9000021717612

    Articles in CiNii:1

    • Vacuum Microelectronics. (1991)
  • Kanemaru Seigo ID: 9000025117631

    Articles in CiNii:1

    • Characteristics of ion-induced bending phenomenon (2010)
  • Kanemaru Seigo ID: 9000051265688

    Articles in CiNii:1

    • Fabrication of Volcano-Structured Double-Gate Field Emitter Array by Etch-Back Technique (2008)
  • Kanemaru Seigo ID: 9000252767600

    Electrotechnical Laboratory (1993 from CiNii)

    Articles in CiNii:1

    • Vacuum Microtriode with Comb-Shaped Lateral Field-Emitter Array (1993)
  • Kanemaru Seigo ID: 9000252956622

    Graduate School of Science and Engineering, Tokyo Institute of Technology (1985 from CiNii)

    Articles in CiNii:1

    • Control of Crystal Orientations in Lattice-Mismatched SrF<SUB>2</SUB> and (Ca, Sr)F<SUB>2</SUB> Films on Si Substrates by Intermediate CaF<SUB>2</SUB> Films (1985)
  • Kanemaru Seigo ID: 9000252960553

    Graduate School of Science and Engineering, Tokyo Institute of Technology (1987 from CiNii)

    Articles in CiNii:1

    • Growth and Characterization of Compositionally Graded (Ca, Sr)F<SUB>2</SUB> Layers on Si(111) Substrates (1987)
  • Kanemaru Seigo ID: 9000252961074

    Graduate School of Science and Engineering, Tokyo Institute of Technology (1987 from CiNii)

    Articles in CiNii:1

    • A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures (1987)
  • Kanemaru Seigo ID: 9000252983908

    Articles in CiNii:1

    • Low-Operation-Voltage Comb-Shaped Field Emitter Array (1992)
  • Kanemaru Seigo ID: 9000252985926

    Electrotechnical Laboratory (1993 from CiNii)

    Articles in CiNii:1

    • Fabrication and Characterization of Comb-Shaped Lateral Field-Emitter Arrays (1993)
  • Kanemaru Seigo ID: 9000258120552

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba–shi, Ibaraki 305 (1994 from CiNii)

    Articles in CiNii:1

    • Fabrication and Characterization of Cross-Edge-Structured Vertical Field Emitter Arrays. (1994)
  • Kanemaru Seigo ID: 9000258124959

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba–shi, Ibaraki 305, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Fabrication of Silicon Field Emitter Arrays with 0.1-.MU.m-Diameter Gate by Focused Ion Beam Lithography. (1995)
  • Kanemaru Seigo ID: 9000258125033

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba–shi, Ibaraki 305, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Fabrication of Petal-Shaped Vertical Field Emitter Arrays. (1995)
  • Kanemaru Seigo ID: 9000258125093

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Emission Characteristics of Ion-Implanted Silicon Emitter Tips. (1995)
  • Kanemaru Seigo ID: 9000258125340

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba–shi, Ibaraki 305, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Nanoscale Evaluation of Structure and Surface Potential of Gated Field Emitters by Scanning Maxwell-Stress Microscope. (1995)
  • Kanemaru Seigo ID: 9000258134436

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba–shi, Ibaraki 305, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Fabrication of a Three-Dimensional Vacuum Magnetic Sensor with a Si Tip. (1997)
  • Kanemaru Seigo ID: 9000258134447

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Fabrication of Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Silicon Field Emitters with a Polysilicon Dual Gate. (1997)
  • Kanemaru Seigo ID: 9000258153099

    Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan (2000 from CiNii)

    Articles in CiNii:1

    • CHF3 Plasma Treatment of Si Field Emitter Arrays For No Damage Vacuum Packaging. (2000)
  • Kanemaru Seigo ID: 9000258162418

    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Close Observation of the Geometrical Features of an Ultranarrow Silicon Nanowire Device. (2002)
  • Kanemaru Seigo ID: 9000258163377

    Nanoelectronics Research Institute, AIST, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Mechanism of Tungsten Plug Corrosion during Chemical Stripping Process: Scanning Maxwell-Stress Microscopy and Electrochemical Potentiometry Studies. (2002)
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