Search Results1-20 of  22

  • 1 / 2
  • KANISAWA Kiyoshi ID: 9000404509000

    NTT Basic Research Laboratories, NTT Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Low-temperature scanning tunneling spectroscopy characterization of zero-dimensional electronic states of faultily stacked InAs nanostructures (2005)
  • KANISAWA Kiyoshi ID: 9000001721367

    NTT Basic Research Laboratories (1995 from CiNii)

    Articles in CiNii:1

    • Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy (1995)
  • KANISAWA Kiyoshi ID: 9000001722786

    NTT Basic Research Laboratories (1995 from CiNii)

    Articles in CiNii:1

    • Reconstruction Dependent Electron-Hole Recombination on GaAs(001) Surfaces (1995)
  • KANISAWA Kiyoshi ID: 9000005604581

    NTT Basic Research Laboratories (1999 from CiNii)

    Articles in CiNii:1

    • Drastic Improvement in Surface Flantness Properties by Using GaAs(111)A Substrates in Molecular Beam Epitaxy (1999)
  • KANISAWA Kiyoshi ID: 9000005737570

    NTT LSI Laboratories (1995 from CiNii)

    Articles in CiNii:1

    • Quantum Interferometric Spectroscopy:A Novel Technique for Nanometer-Scale Characterization of Heterostructures (1995)
  • KANISAWA Kiyoshi ID: 9000006029192

    NTT Basic Research Laboratories, NTT Corporation (2005 from CiNii)

    Articles in CiNii:2

    • Unpinning of the Fermi level at clean (111)A surfaces of heavily Si-doped In_<0.53>Ga_<0.47>As thin films epitaxially grown on InP substrates (2005)
    • 22aXF-13 LT-STM study of the surface Fermi level position of MBE-grown In_<0.53>Ga_<0.47>As on (001) and (111)A oriented InP substrates (2005)
  • KANISAWA Kiyoshi ID: 9000006966526

    NTT Basic Research Laboratories, NTT Corporation (2006 from CiNii)

    Articles in CiNii:1

    • 28aYB-6 LT-STS study of two-dimensional quantization in In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As heterostructures epitaxially grown on lattice-matched InP(111)A substrates (2006)
  • KANISAWA Kiyoshi ID: 9000107355441

    NTT Basic Research Laboratories, NTT Corporation (2011 from CiNii)

    Articles in CiNii:1

    • Assembling Indium Atoms into Nanostructures on a Cleaved InAs(110) Surface (2011)
  • KANISAWA Kiyoshi ID: 9000107383176

    NTT Basic Research Laboratories (1996 from CiNii)

    Articles in CiNii:1

    • Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy (1996)
  • Kanisawa Kiyoshi ID: 9000003314002

    NTT LSI Laboratories (1989 from CiNii)

    Articles in CiNii:1

    • Yellow Series Excitons of Cu_2O in Megagauss Magnetic Fields (1989)
  • Kanisawa Kiyoshi ID: 9000003518738

    Articles in CiNii:29

    • Low-temperature scanning tunneling spectroscopy characterization of zero-dimensional electronic states of faultily stacked InAs nanostructures (2005)
    • Quantum Phenomena at Compound Semiconductor Surfaces (2006)
    • Mechanism of Electron Accumulation Layer Formation at the MBE-grown InAs(111)A Surface (2008)
  • Kanisawa Kiyoshi ID: 9000024933242

    Articles in CiNii:1

    • Imaging of interference between incident and reflected electron waves at an InAs/GaSb heterointerface by low-temperature scanning tunneling spectroscopy (Special issue: Solid state devices and materials) (2007)
  • Kanisawa Kiyoshi ID: 9000254137842

    Department of Physics, Faculty of Science, Science University of Tokyo (1989 from CiNii)

    Articles in CiNii:1

    • Yellow Series Excitons of Cu<SUB>2</SUB>O in Megagauss Magnetic Fields (1989)
  • Kanisawa Kiyoshi ID: 9000258129120

    NTT LSI Laboratories, 3–1, Morinosato Wakamiya, Atsugi, Kanagawa 243–01, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Quantum Interferometric Spectroscopy: A Novel Technique for Nanometer-Scale Characterization of Heterostructures. (1995)
  • Kanisawa Kiyoshi ID: 9000258131486

    NTT Basic Research Laboratories, 3–1 Morinosato Wakamiya, Atsugi–shi, Kanagawa 234–01, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy. (1996)
  • Kanisawa Kiyoshi ID: 9000258145465

    NTT Basic Research Laboratories, Morinosato–Wakamiya, Atsugi 243–0198, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Drastic Improvement in Surface Flatness Properties by Using GaAs (111)A Substrates in Molecular Beam Epitaxy. (1999)
  • Kanisawa Kiyoshi ID: 9000315679477

    NTT Basic Research Laboratories, NTT Corporation (2015 from CiNii)

    Articles in CiNii:1

    • Electronic Processes in Adatom Thermal Desorption Studied using Low-Temperature STM Combined with Semiconductor MBE System(<Special Issue>Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques) (2015)
  • Kanisawa Kiyoshi ID: 9000401571105

    Articles in CiNii:1

    • Assembling Indium Atoms into Nanostructures on a Cleaved InAs(110) Surface (2011)
  • Kanisawa Kiyoshi ID: 9000401650480

    Articles in CiNii:1

    • Quantum Interferometric Spectroscopy: A Novel Technique for Nanometer-Scale Characterization of Heterostructures (1995)
  • Kanisawa Kiyoshi ID: 9000401655126

    Articles in CiNii:1

    • Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy (1996)
  • 1 / 2
Page Top