Search Results1-20 of  21

  • 1 / 2
  • KANOH Masaaki ID: 9000001514957

    Articles in CiNii:3

    • Parametrization of Autocruise Controller for Optimal State Space Realization to Minimize the Finite Word Length Effect (1995)
    • いすゞ新型エルフの電子・電装・空調について (特集 新型エルフ) (2007)
    • Electronic equipments, electrical equipments and HVAC of Isuzu new Forward (2007)
  • KANOH Masaaki ID: 9000002961640

    Toshiba Corporation (2003 from CiNii)

    Articles in CiNii:7

    • High-Rate and High-Selectivity Liquid Crystal Display Process with A Large Size Surface Wave Plasma Source Using a Slot Antenna (2002)
    • Computational Studies of Low Energy Boron Implantation on Silicon Surface (2003)
    • High-Rate and Low-Damage Downflow Process with Microwave-Excited Plasma Source Using a Slot Antenna for 300mm Wafers (2001)
  • KANOH Masaaki ID: 9000005672413

    Corporate Manufacturing Engineering Center, Toshiba Corporation (2002 from CiNii)

    Articles in CiNii:4

    • Optical Emission and Microwave Field Intensity Measurements in Surface Wave-Excited Planar Plasma (1996)
    • Measurement of Electron Density of Reactive Plasma Using a Plasma Oscillation Method (2002)
    • Inductively Coupled Plasma Source with Internal Straight Antenna (2001)
  • KANOH Masaaki ID: 9000005751167

    Corporate manufacturing Engineering Center, Toshiba Corporation (2000 from CiNii)

    Articles in CiNii:1

    • Dry Etching Characteristics of Si-based Materials Using CF_4/O_2 Atmospheric-Pressure Glow Discharge Plasma (2000)
  • KANOH Masaaki ID: 9000107306451

    Corporate Manufacturing Engineering Center, Toshiba Corporation (2003 from CiNii)

    Articles in CiNii:1

    • A Theoretical Study on the Realistic Low Concentration Doping in Silicon Semiconductors by Accelerated Quantum Chemical Molecular Dynamics Method (2003)
  • KANOH Masaaki ID: 9000107306711

    Corporate Manufacturing Engineering Center, Toshiba Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Quantum Chemical Molecular Dynamics Simulation of the Plasma Etching Processes (2003)
  • KANOH Masaaki ID: 9000107335270

    Corporate Manufacturing Engineering Center, Toshiba Corporation (2001 from CiNii)

    Articles in CiNii:1

    • End-point Detection of Reactive Ion Etching by Plasma Impedance Monitoring (2001)
  • KANOH Masaaki ID: 9000107335704

    Corporate Manufacturing Engineering Center, Toshiba Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Ab Initio Calculation of F Atom Desorption in Tungsten Chemical Vapor Deposition Process Using WF_6 and H_2 (2003)
  • Kanoh Masaaki ID: 9000258148841

    Corporate Manufacturing Engineering Center, Toshiba Corporation, 33 Shin-isogo-cho, Isogo-ku, Yokohama 235-0017, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Dry Etching Characteristics of Si-based Materials Using CF4/O2 Atmospheric-Pressure Glow Discharge Plasma. (2000)
  • Kanoh Masaaki ID: 9000258155594

    Corporate Manufacturing Engineering Center, Toshiba Corporation, 33, Shin-Isogo-cho, Isogo-ku, Yokohama 235-0017, Japan (2001 from CiNii)

    Articles in CiNii:1

    • End-point Detection of Reactive Ion Etching by Plasma Impedance Monitoring. (2001)
  • Kanoh Masaaki ID: 9000258166335

    Corporate Manufacturing Engineering Center, Toshiba Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Quantum Chemical Molecular Dynamics Simulation of the Plasma Etching Processes (2003)
  • Kanoh Masaaki ID: 9000258166562

    Corporate Manufacturing Engineering Center, Toshiba Corporation (2003 from CiNii)

    Articles in CiNii:1

    • A Theoretical Study on the Realistic Low Concentration Doping in Silicon Semiconductors by Accelerated Quantum Chemical Molecular Dynamics Method (2003)
  • Kanoh Masaaki ID: 9000401661452

    Articles in CiNii:1

    • Optical Emission and Microwave Field Intensity Measurements in Surface Wave-Excited Planar Plasma (1996)
  • Kanoh Masaaki ID: 9000401689192

    Articles in CiNii:1

    • Dry Etching Characteristics of Si-based Materials Using CF4/O2Atmospheric-Pressure Glow Discharge Plasma (2000)
  • Kanoh Masaaki ID: 9000401691429

    Articles in CiNii:1

    • Microwave-Excited Large-Area Plasma Source Using a Slot Antenna (2000)
  • Kanoh Masaaki ID: 9000401696525

    Articles in CiNii:1

    • End-point Detection of Reactive Ion Etching by Plasma Impedance Monitoring (2001)
  • Kanoh Masaaki ID: 9000401700533

    Articles in CiNii:1

    • Inductively Coupled Plasma Source with Internal Straight Antenna (2001)
  • Kanoh Masaaki ID: 9000401707661

    Articles in CiNii:1

    • Measurement of Electron Density of Reactive Plasma Using a Plasma Oscillation Method (2002)
  • Kanoh Masaaki ID: 9000401714823

    Articles in CiNii:1

    • Quantum Chemical Molecular Dynamics Simulation of the Plasma Etching Processes (2003)
  • Kanoh Masaaki ID: 9000401714858

    Articles in CiNii:1

    • A Theoretical Study on the Realistic Low Concentration Doping in Silicon Semiconductors by Accelerated Quantum Chemical Molecular Dynamics Method (2003)
  • 1 / 2
Page Top