Search Results1-6 of  6

  • KHAN Mohammad Rezaul Huque ID: 9000005571225

    Department of Electronics, Nagoya University (1996 from CiNii)

    Articles in CiNii:2

    • Schottky Barrier on n-Type Al_<0.14>Ga_<0.86>N Grown by Organometalic Vapor Phase Epitaxy (1995)
    • Electrical Transport Properties of p-GaN (1996)
  • Khan Mohammad Rezaul Huque ID: 9000401594915

    Articles in CiNii:1

    • 1984-02-20 (1984)
  • Khan Mohammad Rezaul Huque ID: 9000401652055

    Articles in CiNii:1

    • Schottky Barrier on n-Type $\bf Al_{0.14}Ga_{0.86}N$ Grown by Organometalic Vapor Phase Epitaxy (1995)
  • Khan Mohammad Rezaul Huque ID: 9000401661367

    Articles in CiNii:1

    • Electrical Transport Properties of p-GaN (1996)
  • Khan Mohammad Rezaul Huque ID: 9000252954399

    Electrical Engineering Department, Nagoya Institute of Technology (1984 from CiNii)

    Articles in CiNii:1

    • Trap Depth at the Interface of CdTe–ZnTe Heterojunctions (1984)
  • Khan Mohammad Rezaul Huque ID: 9000392692376

    Articles in CiNii:1

    • Trap Depth at the Interface of CdTe–ZnTe Heterojunctions (1984)
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