Search Results1-8 of  8

  • KIM Dae Byung ID: 9000107350897

    Department of System IC R&D, Magnachip Semiconductor Ltd. (2007 from CiNii)

    Articles in CiNii:1

    • Layout Dependent Induced Leakage and its Prevention with Different Shallow Trench Isolation Schemes in 0.18μm Dual Gate Complementary Metal Oxide Semiconductor Technology (2007)
  • KIM Dae Byung ID: 9000107389003

    System IC R&D Division, Hynix Semiconductor Inc. (2004 from CiNii)

    Articles in CiNii:1

    • Gate Engineering to Prevent NMOS Dopant Channeling for Nanoscale CMOSFET Technology (2004)
  • KIM Dae-Byung ID: 9000002167515

    Dept. of Materials Engineering, Korea University of Technology and Education (2004 from CiNii)

    Articles in CiNii:1

    • Low Temperature Formation of Highly Thermal Immune Ni Germanosilicide Using NiPt Alloy with Co Over-layer in Si_<1-x>Ge_x according to Different Ge Fractions (x) (2004)
  • KIM Dae-Byung ID: 9000107344397

    MagnaChip Semiconductor Ltd. (2005 from CiNii)

    Articles in CiNii:1

    • Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs (2005)
  • Kim Dae Byung ID: 9000401759835

    Articles in CiNii:1

    • 2007-01-10 (2007)
  • Kim Dae-Byung ID: 9000258180466

    MagnaChip Semiconductor Ltd. (2005 from CiNii)

    Articles in CiNii:1

    • Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs (2005)
  • Kim Dae-Byung ID: 9000401735530

    Articles in CiNii:1

    • Dependence of Analog and Digital Performances on Mechanical Film Stress of ILD Layers in Nanoscale CMOSFETs (2005)
  • Kim Dae-Byung ID: 9000401768694

    Articles in CiNii:1

    • 2008-04-25 (2008)
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