Search Results1-5 of  5

  • KIM Je Won ID: 9000000465663

    School of Electrical Engineering, Kobe University (2001 from CiNii)

    Articles in CiNii:1

    • Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact to p-GaN (2001)
  • KIM Je-Won ID: 9000002167593

    Photonic Device Lab. Samsung Electro-Mechanics Co. (2004 from CiNii)

    Articles in CiNii:1

    • Characteristics of p-type InGaN grown by metalorganic chemical vapor depostion (2004)
  • Kim Je Won ID: 9000069936497

    Articles in CiNii:1

    • Improvement of Light Extraction Efficiency in GaN-Based Light Emitting Diodes by Random Pattern of the p-GaN Surface Using a Silica Colloidal Mask (2008)
  • Kim Je Won ID: 9000258157445

    School of Electrical Engineering, Korea University, Seoul 136-701, Korea|Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 136-791, Korea (2001 from CiNii)

    Articles in CiNii:1

    • Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact to p-GaN. (2001)
  • Kim Je Won ID: 9000401699668

    Articles in CiNii:1

    • Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact top-GaN (2001)
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