Search Results1-20 of  225

  • KIMOTO Tsunenobu ID: 9000404506890

    Department of Electronic Science and Engineering, Kyoto University (2011 from CiNii)

    Articles in CiNii:1

    • SiC power devices for high-efficiency power conversion (2011)
  • KIMOTO Tsunenobu ID: 9000404508976

    Department of Electronic Science and Engineering, Kyoto University (2005 from CiNii)

    Articles in CiNii:1

    • SiC device process technology (2005)
  • Kimoto Tsunenobu ID: 9000018935250

    Articles in CiNii:1

    • Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities (Special Issue : Solid State Devices and Materials (2)) (2012)
  • Kimoto Tsunenobu ID: 9000024950080

    Articles in CiNii:1

    • Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals (2013)
  • Kimoto Tsunenobu ID: 9000025066653

    Articles in CiNii:1

    • 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300℃ (2012)
  • Kimoto Tsunenobu ID: 9000025071269

    Articles in CiNii:1

    • Abnormal out-diffusion of epitaxially doped boron in 4H-SiC caused by implantation and annealing (2007)
  • Kimoto Tsunenobu ID: 9000025087299

    Articles in CiNii:1

    • Influence of effective fixed charges on short-channel effects in SiC metal-oxide-semiconductor field-effect transistors (2010)
  • Kimoto Tsunenobu ID: 9000241501607

    Articles in CiNii:1

    • Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells (2013)
  • KIMOTO Tsunenobu ID: 9000241541830

    Articles in CiNii:1

    • Determination of Phase Diagram of Electron-Hole Systems in 4H-SiC (2013)
  • Kimoto Tsunenobu ID: 9000242139365

    Articles in CiNii:1

    • Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates (2013)
  • KIMOTO Tsunenobu ID: 9000001104876

    Department of Electronic Science and Engineering, Kyoto University (2003 from CiNii)

    Articles in CiNii:1

    • Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338) (2003)
  • KIMOTO Tsunenobu ID: 9000001421060

    Kyoto University (2005 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth of SiC by CVD and Impurity Doping (2005)
  • KIMOTO Tsunenobu ID: 9000001814097

    Department of Electronics Science and Engineering, Kyoto University (2006 from CiNii)

    Articles in CiNii:1

    • Structure Analysis of ZrB_2(0001) Surface Prepared by ex situ HF Treatment (2006)
  • KIMOTO Tsunenobu ID: 9000002165017

    Department of Electronics Science and Engineering, Kyoto University (1999 from CiNii)

    Articles in CiNii:1

    • High-quality Epitaxial Growth of SiC and State-of-the-art Device Development (1999)
  • KIMOTO Tsunenobu ID: 9000002169277

    Department of Electronic Science and Engineering, Kyoto University (2009 from CiNii)

    Articles in CiNii:3

    • High-Voltage 4H-SiC RESURF MOSFETs Processed by Oxide Deposition and N_2O Annealing (2005)
    • Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses (2008)
    • Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions (2009)
  • KIMOTO Tsunenobu ID: 9000004745929

    Articles in CiNii:4

    • Material Report ワイドギャップ半導体シリコンカーバイド(SiC)の結晶成長とデバイス開発の現状 (2005)
    • Characterization of deep levels in 4H-SiC epilayers by Optical Capacitance Transient Spectroscopy (O-CTS) (2004)
    • Characterization of deep levels in 4H-SiC epilayers by Optical Capacitance Transient Spectroscopy (O-CTS) (2004)
  • KIMOTO Tsunenobu ID: 9000004837717

    Department of Electronic Science and Engineering, Kyoto University (2004 from CiNii)

    Articles in CiNii:19

    • Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition (2001)
    • High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes (2003)
    • Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature (2004)
  • KIMOTO Tsunenobu ID: 9000004890437

    Department of Electronic Science and Engineering, Kyolo University (2003 from CiNii)

    Articles in CiNii:1

    • Recent Progress in Epitaxial Growth of SiC for Power Devices (2003)
  • KIMOTO Tsunenobu ID: 9000005567513

    Department of Electrical Engineering, Faculty of Engineering, Kyoto University (1995 from CiNii)

    Articles in CiNii:1

    • Nitrogen Ion Implantation in to 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes (1995)
  • KIMOTO Tsunenobu ID: 9000005600254

    Department of Electronics Science and Engineering, Kyoto University (1999 from CiNii)

    Articles in CiNii:1

    • Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement (1999)
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