Search Results1-20 of  46

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  • Kinomura Atsushi ID: 9000009438474

    Articles in CiNii:1

    • Materials Characterization Using Ion Microbeams (1998)
  • KINOMURA Atsushi ID: 9000004958866

    AIST (2006 from CiNii)

    Articles in CiNii:22

    • A New Machine for Materials Synthesis Using Positive and Negative Ion Deposition (1995)
    • Coaxial Evaporation Source Using Vacuum Arc Dischage (1997)
    • 3. 2 Surface modification by ion implantation. (1995)
  • KINOMURA Atsushi ID: 9000005547552

    National Institute of Advanced Industrial Science and Technology (2002 from CiNii)

    Articles in CiNii:11

    • Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process (2000)
    • Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method (2000)
    • Silicon Carbide Film Growth Using Dual Isotopical ^<28>Si^- and ^<12>C^+ Ion species (2000)
  • KINOMURA Atsushi ID: 9000021310867

    Government Industrial Research Institute, Osaka (1992 from CiNii)

    Articles in CiNii:1

    • Erosion of Titanium Nitride Coatings. (1992)
  • KINOMURA Atsushi ID: 9000252845610

    Osaka National Research Institute, AIST (1995 from CiNii)

    Articles in CiNii:1

    • Microanalysis by high-energy ion microprobe (1995)
  • KINOMURA Atsushi ID: 9000256745226

    Osaka National Research Institute, AIST (1995 from CiNii)

    Articles in CiNii:1

    • Fundamentals and Present Aspects of Ion Beam Technology. V. Application of Beam. 3. Application of Industries. 3.2 Surface modification by ion implantation. (1995)
  • KINOMURA Atsushi ID: 9000391847753

    National Institute of Advanced Industrial Science and Technology, JAPAN (2003 from CiNii)

    Articles in CiNii:1

    • Nano Crystalline and Smooth Surface Epilayer Formations of 3C-SiC at Low Temperatures Using Energetic Ions (2003)
  • Kinomura Atsushi ID: 9000024981396

    Articles in CiNii:1

    • Positron trapping sites originating from oxide interfaces on 4H-SiC C(0001)- and Si(0001)-faces (2008)
  • Kinomura Atsushi ID: 9000252764965

    Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University (1992 from CiNii)

    Articles in CiNii:1

    • Correction of Energy Shifts to Form Real Three-Dimensional Images by Microprobe RBS (1992)
  • Kinomura Atsushi ID: 9000252767753

    Government Industrial Research Institute, Osaka (1993 from CiNii)

    Articles in CiNii:1

    • Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature (1993)
  • Kinomura Atsushi ID: 9000252967218

    Osaka University, Faculty of Engineering Science and Research Center for Extreme Materials (1988 from CiNii)

    Articles in CiNii:1

    • Optimization in Spot Sizes of Focused MeV Ion Beam by Precise Adjustment of Lens-Current Excitations (1988)
  • Kinomura Atsushi ID: 9000252971664

    Osaka University, Faculty of Engineering Science and Research Center for Extreme Materials (1989 from CiNii)

    Articles in CiNii:1

    • Quick Focus Adjustment for Quadrupole Lens System to Form High-Energy Ion Microbeam (1989)
  • Kinomura Atsushi ID: 9000252980167

    Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University (1992 from CiNii)

    Articles in CiNii:1

    • Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe (1992)
  • Kinomura Atsushi ID: 9000252983650

    Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University (1992 from CiNii)

    Articles in CiNii:1

    • Damage during Microchanneling Analysis Using 400 keV Helium Ion Microprobe (1992)
  • Kinomura Atsushi ID: 9000253252668

    Osaka National Research Institute, AIST (2000 from CiNii)

    Articles in CiNii:1

    • Neutron Activation Analysis of High-Purity Iron in Comparison with Chemical Analysis (2000)
  • Kinomura Atsushi ID: 9000253252701

    Osaka National Research Institute (2000 from CiNii)

    Articles in CiNii:1

    • Silicon Carbide Film Growth Using Dual Isotopical <SUP>28</SUP>Si<SUP>−</SUP> and <SUP>12</SUP>C<SUP>+</SUP> Ion Species (2000)
  • Kinomura Atsushi ID: 9000253252705

    Department of Materials Physics, Osaka National Research Institute, AIST (2000 from CiNii)

    Articles in CiNii:1

    • Formation of High Purity Films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method (2000)
  • Kinomura Atsushi ID: 9000253252711

    Osaka National Research Institute (ONRI), AIST (2000 from CiNii)

    Articles in CiNii:1

    • Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process (2000)
  • Kinomura Atsushi ID: 9000258120779

    Osaka National Research Institute, AIST, Ikeda, Osaka 563 (1994 from CiNii)

    Articles in CiNii:1

    • Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction. (1994)
  • Kinomura Atsushi ID: 9000258125259

    Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs). (1995)
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