Search Results1-20 of  72

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  • Kinoshita Kyoichi ID: 9000241499165

    Articles in CiNii:1

    • Increase of Si₀.₅Ge₀.₅ Bulk Single Crystal Size as Substrates for Strained Ge Epitaxial Layers (Special Issue : Solid State Devices and Materials) （2013）
  • KINOSHITA Kyoichi ID: 9000000168050

    Articles in CiNii:4

    • Evaluation of the Wettability of Molten InGaAs （1997）
    • 小特集「微小重力科学関連の受賞者」に寄せて （2003）
    • Third International Symposium on Physical Sciences in Space （2007）
  • KINOSHITA Kyoichi ID: 9000000318682

    Space Utilization Research Program, National Space Development Agency of Japan （1999 from CiNii）

    Articles in CiNii:1

    • Wettability and Surface Tension of Molten InGaAs （1999）
  • KINOSHITA Kyoichi ID: 9000000591931

    NTT Basic Research Laboratories （1995 from CiNii）

    Articles in CiNii:2

    • 高品質な結晶を作製「エンデバー号」材料実験成果からPb_<1-X> Sn_X Te単結晶の育成 （1994）
    • Crystal Growth in Microgravity （1995）
  • KINOSHITA Kyoichi ID: 9000003140940

    NTT Basic Research Laoratories （1999 from CiNii）

    Articles in CiNii:57

    • Crystal Growth of Pb_<1-x>Sn_xTe by a Physical Vapor Transport Method in Microgravity -Computer Simulation- （1995）
    • Observation of fluid flow in the PbCl_2-PbBr_2 melt during free fall. （1996）
    • Joint Xth European and VIth Russian Symposium on PHYSICAL SCIENCES IN MICROGRAVITY （1997）
  • KINOSHITA Kyoichi ID: 9000006804609

    Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency （2008 from CiNii）

    Articles in CiNii:3

    • High Quality In_xGa_<1-x>As (x: 0.1-0.13) Platy Crystal Growth for Semiconductor Laser Substrates （2007）
    • Scale up of In_xGa_<1-x>A_s (x: 0.08 - 0.13) Platy Crystals for Semiconductor Laser Substrates （2008）
    • Detailed Results of This Period : Growth of Homogeneous Si_<0.5>Ge_<0.5> Single Crystals by the Traveling Liquidus-Zone Method (Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs) : Growth of homogeneous crystals) （2005）
  • KINOSHITA Kyoichi ID: 9000014186146

    TOYOTA INDUSTRIES CORPORATION （2008 from CiNii）

    Articles in CiNii:1

    • Thermoelectric Property of Na-Doped Mg_2Si （2008）
  • KINOSHITA Kyoichi ID: 9000016376742

    Japan Aerospace Exploration Agency (JAXA) （2009 from CiNii）

    Articles in CiNii:1

    • 10-Gbps Direct Modulation Using a 1.31-μm Ridge Waveguide Laser on an InGaAs Ternary Substrate （2009）
  • KINOSHITA Kyoichi ID: 9000018269966

    Articles in CiNii:2

    • Pioneering Experiments on Fluid Dynamics and Mechanics in Microgravity by Astronaut Mohri （2006）
    • 微小重力環境を利用した半導体の結晶成長 （2009）
  • KINOSHITA Kyoichi ID: 9000248232411

    Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency （2011 from CiNii）

    Articles in CiNii:1

    • Growth of SiGe Crystals by the Traveling Liquidus Zone (TLZ) Method : Preliminary Experiments on the Ground （2011）
  • KINOSHITA Kyoichi ID: 9000252845596

    NTT Basic Research Laboratories （1995 from CiNii）

    Articles in CiNii:1

    • Crystal growth of the PbTe-SnTe and PbBr<sub>2</sub>-PbCl<sub>2</sub> systems under microgravity （1995）
  • KINOSHITA Kyoichi ID: 9000254745845

    NTT基礎研究所 （1994 from CiNii）

    Articles in CiNii:1

    • FMPT: First Material Processing Test. Crystal Growth of Pb1-xSnxTe under Microgravity. （1994）
  • KINOSHITA Kyoichi ID: 9000364163496

    木下産婦人科クリニック （2011 from CiNii）

    Articles in CiNii:8

    • A Cast of Cervical Pregnancy Treated with Intra-amniotic Ethanol Injection （1992）
    • P-101 妊娠早期GS像の多角的観察による産科異常発生に関する検討 : 血中β-HCGとの検討を含めて （1993）
    • Clinical Significance of Detection Time and Site of Early Gestational Sac by Ultrasonography （1994）
  • KINOSHITA Kyoichi ID: 9000409010772

    Space Utilization Promotion Department, Japan Space Forum|School of Science and Technology, Meiji University （2017 from CiNii）

    Articles in CiNii:1

    • Compositionally Uniform SiGe Crystal Growth aboard the International Space Station (1) Hicari project summary （2017）
  • KINOSHITA Kyoichi ID: 9000409010779

    Space Utilization Promotion Department, Japan Space Forum|School of Science and Technology, Meiji University （2017 from CiNii）

    Articles in CiNii:1

    • Compositionally Uniform SiGe Crystal Growth aboard the International Space Station (2) Growth Experiments by the TLZ Method and Microgravity Effects （2017）
  • KINOSHITA Kyoichi ID: 9000409010980

    Japan Aerospace Exploration Agency （2016 from CiNii）

    Articles in CiNii:1

    • SiGe Crystal Growth by the Traveling Liquidus-Zone Method aboard the International Space Station （2016）
  • Kinoshita Kyoichi ID: 9000004338868

    Space Enviroment Utilization Reseach Program, Space Development Agency of Japan （2002 from CiNii）

    Articles in CiNii:9

    • Evaluation of the Wettability of Molten InGaAs （1997）
    • My Successful and Unsuccessful Experience - Key techniques and issues for space experiments - （2000）
    • My successful and unsuccessful space experiments （2000）
  • Kinoshita Kyoichi ID: 9000004339107

    Institute of Space and Astronautical Science （2012 from CiNii）

    Articles in CiNii:51

    • Preliminary study of homogeneous crystal growth of compound semiconductors （1996）
    • Effect of Gravitational Acceleration on Relaxation of Solute Concentration in Solution （1996）
    • Crystal Growth of InGaAs of a Uniform Composition under Microgravity Conditions （1998）
  • Kinoshita Kyoichi ID: 9000014401394

    JAXA （2010 from CiNii）

    Articles in CiNii:3

    • ICCG-11, ISSCG-IX （1995）
    • Vapor-Melt-Solid(VMS)法によるPb_<1-x>Sn_xTe単結晶の育成 （1982）
    • Bulk Crystal Growth of Miscellaneous Materials(The 40th National Conference on Crystal Growth (NCCG-40) and the 16th International Conference on Crystal Growth (ICCG-16)/the 14th International Conference on Vapor Growth and Epitaxy (ICVGE-14),News of JACG) （2010）
  • Kinoshita Kyoichi ID: 9000252760780

    NTT Electrical Communications Laboratories （1988 from CiNii）

    Articles in CiNii:1

    • Preparation and Superconducting Properties of Tetragonal Ba<SUB>2</SUB>YCu<SUB>3</SUB>O<SUB>7−<I>y</I></SUB> and Ba<SUB>2</SUB>EuCu<SUB>3</SUB>O<SUB>7−<I>y</I></SUB> with Low Oxygen-Defect Concentration (0.05<<I>y</I><0.20) （1988）
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