Search Results1-8 of  8

  • KITA Toshifumi ID: 9000019186929

    (株)島津製作所 (2012 from CiNii)

    Articles in CiNii:1

    • Regulations and Compliance for Chemical Research and Development : The Relationship between Intellectual Property and the Analytic Chemistry (2012)
  • KITA Toshifumi ID: 9000256389133

    Department of Surgery, Machida City Hospital (1986 from CiNii)

    Articles in CiNii:1

    • Two Cases of Strangulated Obturator Hernia (1986)
  • KITA Toshifumi ID: 9000303984978

    Nagoya Institute of Technology (2013 from CiNii)

    Articles in CiNii:1

    • J211012 The defects formation induced by cyclic compressive stress and residual tensile strength on single crystalline silicon (2013)
  • KITA Toshifumi ID: 9000304691876

    Nagoya Institute of Technology (2014 from CiNii)

    Articles in CiNii:1

    • J2240305 Effect of stress ratio on fatigue damage accumulation process in single crystalline silicon (2014)
  • KITA Toshifumi ID: 9000305590868

    Nagoya Institute of Technology (2014 from CiNii)

    Articles in CiNii:1

    • 302 Observation of fatigue damage accumulation in silicon under cyclic loading (2014)
  • KITA Toshifumi ID: 9000308047508

    Nagoya Institute of Technology (2013 from CiNii)

    Articles in CiNii:1

    • 525 Observation of the fatigue damage of silicon under compressive stress using electron beam induced current (2013)
  • KITA Toshifumi ID: 9000386209603

    Nagoya Institute of Technology (2017 from CiNii)

    Articles in CiNii:1

    • Observation of Fatigue Fracture Origin in Single Crystal Silicon by Transmission Electron Microscope (2017)
  • Kita Toshifumi ID: 9000305589507

    Nagoya Institute of Technology (2014 from CiNii)

    Articles in CiNii:1

    • 20pm3-PM007 Fatigue test with different stress ratio for single crystalline silicon thin film (2014)
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