Search Results1-13 of  13

  • KITAGAWA Masatoshi ID: 9000005543052

    Corporate Production Engineering Laboratories, Matsushita Electric Ind.Co., Ltd. (2000 from CiNii)

    Articles in CiNii:9

    • LOW-TEMPERATURE FORMATION OF poly-Si FILMS BY INDUCTIVELY-COUPLED SILANE PLASMA (1997)
    • High-Voltage Emitter Short Diode (ESD) (1996)
    • Design Criterion and Operation Mechanism for 4.5kV Injection Enhanced Gate Transistor (1998)
  • KITAGAWA Mitsuhiko ID: 9000000228164

    Toshiba Corporation (1997 from CiNii)

    Articles in CiNii:1

    • 4.5kV Injection Enhanced Gate Transistor:Experimental Verification of the Electrical Characteristics (1997)
  • KITAGAWA Mitsuhiko ID: 9000001721150

    Toshiba Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Study of 4.5kV MOS-Power Device with Injection Enhanced Trench Gate Structure (1996)
  • KITAGAWA Mitsuhiko ID: 9000001922915

    Toshiba Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Ultra Low Cout×Ron Photo-relay using Depleted Drift Layer in Thin Film SOI (2003)
  • KITAGAWA Mitsuhiko ID: 9000005717982

    Toshiba Corporation (1997 from CiNii)

    Articles in CiNii:1

    • Study of 4.5kV MOS-Power Device with Injection-Enhanced Trench Gate Structure (1997)
  • KITAGAWA Mitsuhiko ID: 9000006468668

    Microelectronics Center, Toshiba Corporation (2002 from CiNii)

    Articles in CiNii:1

    • The 4.5kV Press Pack Injection Enhanced Gate Transistor with Current Sense Function (2002)
  • KITAGAWA Mitsuhiko ID: 9000253687419

    Institute for Laser Science, University of Electro-Communication (1983 from CiNii)

    Articles in CiNii:1

    • Pulse Radiolysis Measurement of De-excitation Rate Constants in KrF Laser Medium (1983)
  • Kitagawa Mitsuhiko ID: 9000258136211

    Toshiba Corporation, 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Study of 4.5 kV MOS-Power Device with Injection-Enhanced Trench Gate Structure. (1997)
  • Kitagawa Mitsuhiko ID: 9000401659385

    Articles in CiNii:1

    • High-Voltage Emitter Short Diode (ESD) (1996)
  • Kitagawa Mitsuhiko ID: 9000401662600

    Articles in CiNii:1

    • Study of 4.5 kV MOS-Power Device with Injection-Enhanced Trench Gate Structure (1997)
  • Kitagawa Mitsuhiko ID: 9000401664348

    Articles in CiNii:1

    • 4.5 kV Injection Enhanced Gate Transistor: Experimental Verification of the Electrical Characteristics (1997)
  • Kitagawa Mitsuhiko ID: 9000401673507

    Articles in CiNii:1

    • Design Criterion and Operation Mechanism for 4.5 kV Injection Enhanced Gate Transistor (1998)
  • Kitagawa Mitsuhiko ID: 9000401710122

    Articles in CiNii:1

    • The 4.5 kV Press Pack Injection Enhanced Gate Transistor with Current Sense Function (2002)
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