Search Results1-20 of  26

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  • Kobayashi Kiyoteru ID: 9000025116978

    Articles in CiNii:1

    • Photoinduced leakage currents in silicon carbon nitride dielectrics for copper diffusion barriers (Special issue: Advanced metallization for ULSI applications) (2010)
  • KOBAYASHI Kiyoteru ID: 9000001675318

    Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corporation (2005 from CiNii)

    Articles in CiNii:2

    • Investigation of the Divided Deposition Method of TiN Thin Films for Metal-Insulator-Metal Capacitor Applications (2005)
    • A New Divided Deposition Method of TiN Thin Films for MIM Capacitor Applications (2004)
  • KOBAYASHI Kiyoteru ID: 9000004812917

    ULSI Laboratory, Evaluation amp Analysis Center, Mitsubishi Electric Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Reliability Evaluation of Thin Gate Oxide Using a Flat Capacitor Test Structure (1996)
  • KOBAYASHI Kiyoteru ID: 9000004960048

    Mitsubishi Electric Corporation, ULSI Laboratory (1996 from CiNii)

    Articles in CiNii:6

    • Highly Reliable Gate Oxides Formed by UV-O_2 Oxidation (1996)
    • 高信頼トンネル酸化膜形成技術 (特集"半導体") (1996)
    • 極薄絶縁膜形成技術 (超LSI用絶縁膜<特集>) (1990)
  • KOBAYASHI Kiyoteru ID: 9000004970220

    Tokai University (2007 from CiNii)

    Articles in CiNii:2

    • Depth Profile Analysis of Nickel Silicide Films Using Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) (2007)
    • Improvement in Reliability of Cu Dual-Damascene Interconnects Using CuAl Alloy Seed (2005)
  • KOBAYASHI Kiyoteru ID: 9000107343856

    Process Technology Development Division, Renesas Technology Corp. (2005 from CiNii)

    Articles in CiNii:1

    • Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond (2005)
  • KOBAYASHI Kiyoteru ID: 9000107345388

    Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp. (2005 from CiNii)

    Articles in CiNii:1

    • Hydrogen Ion Drift into Underlying Oxides by RF Bias during High-Density Plasma Chemical Vapor Deposition (2005)
  • KOBAYASHI Kiyoteru ID: 9000258089407

    Graduate School of Engineering, Tokai University (2014 from CiNii)

    Articles in CiNii:1

    • Effect of Metal Work Function on Conduction Current in Silicon Nitride Films after Exposure to Ultraviolet Illumination (2014)
  • KOBAYASHI Kiyoteru ID: 9000391422089

    Tokai University (2017 from CiNii)

    Articles in CiNii:1

    • Extraction of Energy Distribution of Electrons Trapped in Silicon Carbonitride (SiCN) Charge Trapping Films (2017)
  • Kobayashi Kiyoteru ID: 9000025021959

    Articles in CiNii:1

    • Ultraviolet light-induced conduction current in silicon nitride films (2011)
  • Kobayashi Kiyoteru ID: 9000083476056

    Articles in CiNii:1

    • Effectiveness of Dimethyl Carbonate and Dipivaloyl Methane Chemicals for Internal Repair of Plasma-Damaged Low-kFilms (2011)
  • Kobayashi Kiyoteru ID: 9000258132403

    Mitsubishi Electric Corporation, ULSI Laboratory, 4–1 Mizuhara, Itami, Hyogo 664, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Kinetic Study of Silicon Nitride Growth from Dichlorosilane and Ammonia. (1996)
  • Kobayashi Kiyoteru ID: 9000258140581

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1, Mizuhara, Itami, Hyogo 664, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Highly Reliable SiO2 Films Formed by UV-O2 Oxidation. (1998)
  • Kobayashi Kiyoteru ID: 9000258141921

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Impacf of Organic Contaminants from the Environment on Electrical Characteristics of Thin Gate Oxides. (1998)
  • Kobayashi Kiyoteru ID: 9000258180455

    Process Technology Development Division, Renesas Technology Corp. (2005 from CiNii)

    Articles in CiNii:1

    • Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond (2005)
  • Kobayashi Kiyoteru ID: 9000401655690

    Articles in CiNii:1

    • Kinetic Study of Silicon Nitride Growth from Dichlorosilane and Ammonia (1996)
  • Kobayashi Kiyoteru ID: 9000401662554

    Articles in CiNii:1

    • 1997-03-30 (1997)
  • Kobayashi Kiyoteru ID: 9000401670588

    Articles in CiNii:1

    • Highly Reliable SiO2Films Formed by UV-O2Oxidation (1998)
  • Kobayashi Kiyoteru ID: 9000401671892

    Articles in CiNii:1

    • Impact of Organic Contaminants from the Environment on Electrical Characteristics of Thin Gate Oxides (1998)
  • Kobayashi Kiyoteru ID: 9000401687278

    Articles in CiNii:1

    • Impact of Thermal Nitridation on Microscopic Stress-Induced Leakage Current in Sub-10-nm Silicon Dioxides (2000)
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