Search Results1-20 of  26

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  • Kobayashi Kiyoteru ID: 9000025116978

    Articles in CiNii:1

    • Photoinduced leakage currents in silicon carbon nitride dielectrics for copper diffusion barriers (Special issue: Advanced metallization for ULSI applications) （2010）
  • KOBAYASHI Kiyoteru ID: 9000001675318

    Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corporation （2005 from CiNii）

    Articles in CiNii:2

    • Investigation of the Divided Deposition Method of TiN Thin Films for Metal-Insulator-Metal Capacitor Applications （2005）
    • A New Divided Deposition Method of TiN Thin Films for MIM Capacitor Applications （2004）
  • KOBAYASHI Kiyoteru ID: 9000004812917

    ULSI Laboratory, Evaluation amp Analysis Center, Mitsubishi Electric Corporation （1996 from CiNii）

    Articles in CiNii:1

    • Reliability Evaluation of Thin Gate Oxide Using a Flat Capacitor Test Structure （1996）
  • KOBAYASHI Kiyoteru ID: 9000004960048

    Mitsubishi Electric Corporation, ULSI Laboratory （1996 from CiNii）

    Articles in CiNii:6

    • Highly Reliable Gate Oxides Formed by UV-O_2 Oxidation （1996）
    • 高信頼トンネル酸化膜形成技術 (特集"半導体") （1996）
    • 極薄絶縁膜形成技術 (超LSI用絶縁膜<特集>) （1990）
  • KOBAYASHI Kiyoteru ID: 9000004970220

    Tokai University （2007 from CiNii）

    Articles in CiNii:2

    • Depth Profile Analysis of Nickel Silicide Films Using Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) （2007）
    • Improvement in Reliability of Cu Dual-Damascene Interconnects Using CuAl Alloy Seed （2005）
  • KOBAYASHI Kiyoteru ID: 9000107343856

    Process Technology Development Division, Renesas Technology Corp. （2005 from CiNii）

    Articles in CiNii:1

    • Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond （2005）
  • KOBAYASHI Kiyoteru ID: 9000107345388

    Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp. （2005 from CiNii）

    Articles in CiNii:1

    • Hydrogen Ion Drift into Underlying Oxides by RF Bias during High-Density Plasma Chemical Vapor Deposition （2005）
  • KOBAYASHI Kiyoteru ID: 9000258089407

    Graduate School of Engineering, Tokai University （2014 from CiNii）

    Articles in CiNii:1

    • Effect of Metal Work Function on Conduction Current in Silicon Nitride Films after Exposure to Ultraviolet Illumination （2014）
  • KOBAYASHI Kiyoteru ID: 9000391422089

    Tokai University （2017 from CiNii）

    Articles in CiNii:1

    • Extraction of Energy Distribution of Electrons Trapped in Silicon Carbonitride (SiCN) Charge Trapping Films （2017）
  • Kobayashi Kiyoteru ID: 9000025021959

    Articles in CiNii:1

    • Ultraviolet light-induced conduction current in silicon nitride films （2011）
  • Kobayashi Kiyoteru ID: 9000083476056

    Articles in CiNii:1

    • Effectiveness of Dimethyl Carbonate and Dipivaloyl Methane Chemicals for Internal Repair of Plasma-Damaged Low-kFilms （2011）
  • Kobayashi Kiyoteru ID: 9000258132403

    Mitsubishi Electric Corporation, ULSI Laboratory, 4–1 Mizuhara, Itami, Hyogo 664, Japan （1996 from CiNii）

    Articles in CiNii:1

    • Kinetic Study of Silicon Nitride Growth from Dichlorosilane and Ammonia. （1996）
  • Kobayashi Kiyoteru ID: 9000258140581

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1, Mizuhara, Itami, Hyogo 664, Japan （1998 from CiNii）

    Articles in CiNii:1

    • Highly Reliable SiO2 Films Formed by UV-O2 Oxidation. （1998）
  • Kobayashi Kiyoteru ID: 9000258141921

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan （1998 from CiNii）

    Articles in CiNii:1

    • Impacf of Organic Contaminants from the Environment on Electrical Characteristics of Thin Gate Oxides. （1998）
  • Kobayashi Kiyoteru ID: 9000258180455

    Process Technology Development Division, Renesas Technology Corp. （2005 from CiNii）

    Articles in CiNii:1

    • Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond （2005）
  • Kobayashi Kiyoteru ID: 9000401655690

    Articles in CiNii:1

    • Kinetic Study of Silicon Nitride Growth from Dichlorosilane and Ammonia （1996）
  • Kobayashi Kiyoteru ID: 9000401662554

    Articles in CiNii:1

    • 1997-03-30 （1997）
  • Kobayashi Kiyoteru ID: 9000401670588

    Articles in CiNii:1

    • Highly Reliable SiO2Films Formed by UV-O2Oxidation （1998）
  • Kobayashi Kiyoteru ID: 9000401671892

    Articles in CiNii:1

    • Impact of Organic Contaminants from the Environment on Electrical Characteristics of Thin Gate Oxides （1998）
  • Kobayashi Kiyoteru ID: 9000401687278

    Articles in CiNii:1

    • Impact of Thermal Nitridation on Microscopic Stress-Induced Leakage Current in Sub-10-nm Silicon Dioxides （2000）
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