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  • KODAMA Masahito ID: 9000000503694

    Department of Urology, Nihon University School of Medicine, Surugadai Nihon University Hospital (2000 from CiNii)

    Articles in CiNii:1

    • Influence of 5-hydroxytryptamine and the effect of a new serotonin receptor antagonist (sarpogrelate) on detrusor smooth muscle of streptozotocin-induced diabetes mellitus in the rat (2000)
  • KODAMA Masahito ID: 9000000503948

    Department of Urology, Nihon University School of Medicine, Surugadai Nihon University Hospital (2000 from CiNii)

    Articles in CiNii:2

    • Cytoreductive surgery with liver-involved renal cell carcinoma (2000)
    • Multivariate analysis of clinicopathologic factors and the efficacy of postoperative IFN-y adjuvant therapy in 115 patients with renal cell carcinoma (1999)
  • KODAMA Masahito ID: 9000004643279

    社会保険横浜中央病院泌尿器科 (2008 from CiNii)

    Articles in CiNii:22

    • A Clinical Study of Superficial Bladder Tumors Treated with Yransurethral Ho : YAG Laser Surgery (1998)
    • 前立腺癌Stage D<sub>2</sub>における尿道スパイラルカテーテルの経験 (1995)
    • 前立腺癌骨転移のマーカーとしてのコラーゲン架橋物質尿中ピリジノリンの検討 (1995)
  • KODAMA Masahito ID: 9000004874835

    The authors are with the Department of Toyota Central R&D Labs. (1998 from CiNii)

    Articles in CiNii:1

    • Temperature Characteristics of Lateral Power MOS FET Formed by Solid Phase Epitaxy (1998)
  • KODAMA Masahito ID: 9000004972538

    TOYOTA Central R&D Labs., Inc. (2007 from CiNii)

    Articles in CiNii:9

    • 非線形マイクロ振動子に働く粘性効果の測定 (1996)
    • A Study of MIS-AlGaN/GaN HEMTs with SiO_2 Films as Gate Insulator (2005)
    • A Vertical Operation of Insulated Gate AlGaN/GaN-HFETs (2006)
  • KODAMA Masahito ID: 9000005841785

    KODAMA,Masahito (2001 from CiNii)

    Articles in CiNii:1

    • Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure (2001)
  • Kodama Masahito ID: 9000258154380

    Toyota Central Research & Development Laboratories, Inc., Nagakute, Aichi 480-1192, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure. (2001)
  • Kodama Masahito ID: 9000401564052

    Articles in CiNii:1

    • GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching (2008)
  • Kodama Masahito ID: 9000401701023

    Articles in CiNii:1

    • Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure (2001)
  • Kodama Masahito ID: 9000401765754

    Articles in CiNii:1

    • A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor (2007)
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