Search Results1-10 of  10

  • KODAMA Masahito ID: 9000000503694

    Department of Urology, Nihon University School of Medicine, Surugadai Nihon University Hospital （2000 from CiNii）

    Articles in CiNii:1

    • Influence of 5-hydroxytryptamine and the effect of a new serotonin receptor antagonist (sarpogrelate) on detrusor smooth muscle of streptozotocin-induced diabetes mellitus in the rat （2000）
  • KODAMA Masahito ID: 9000000503948

    Department of Urology, Nihon University School of Medicine, Surugadai Nihon University Hospital （2000 from CiNii）

    Articles in CiNii:2

    • Cytoreductive surgery with liver-involved renal cell carcinoma （2000）
    • Multivariate analysis of clinicopathologic factors and the efficacy of postoperative IFN-y adjuvant therapy in 115 patients with renal cell carcinoma （1999）
  • KODAMA Masahito ID: 9000004643279

    社会保険横浜中央病院泌尿器科 （2008 from CiNii）

    Articles in CiNii:22

    • A Clinical Study of Superficial Bladder Tumors Treated with Yransurethral Ho : YAG Laser Surgery （1998）
    • 前立腺癌Stage D<sub>2</sub>における尿道スパイラルカテーテルの経験 （1995）
    • 前立腺癌骨転移のマーカーとしてのコラーゲン架橋物質尿中ピリジノリンの検討 （1995）
  • KODAMA Masahito ID: 9000004874835

    The authors are with the Department of Toyota Central R&D Labs. （1998 from CiNii）

    Articles in CiNii:1

    • Temperature Characteristics of Lateral Power MOS FET Formed by Solid Phase Epitaxy （1998）
  • KODAMA Masahito ID: 9000004972538

    TOYOTA Central R&D Labs., Inc. （2007 from CiNii）

    Articles in CiNii:9

    • 非線形マイクロ振動子に働く粘性効果の測定 （1996）
    • A Study of MIS-AlGaN/GaN HEMTs with SiO_2 Films as Gate Insulator （2005）
    • A Vertical Operation of Insulated Gate AlGaN/GaN-HFETs （2006）
  • KODAMA Masahito ID: 9000005841785

    KODAMA,Masahito （2001 from CiNii）

    Articles in CiNii:1

    • Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure （2001）
  • Kodama Masahito ID: 9000258154380

    Toyota Central Research & Development Laboratories, Inc., Nagakute, Aichi 480-1192, Japan （2001 from CiNii）

    Articles in CiNii:1

    • Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure. （2001）
  • Kodama Masahito ID: 9000401564052

    Articles in CiNii:1

    • GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching （2008）
  • Kodama Masahito ID: 9000401701023

    Articles in CiNii:1

    • Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure （2001）
  • Kodama Masahito ID: 9000401765754

    Articles in CiNii:1

    • A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor （2007）
Page Top