Search Results1-17 of  17

  • KOFUJI Naoyuki ID: 9000001505531

    Central Research Laboratory, Hitachi, Ltd. (2001 from CiNii)

    Articles in CiNii:1

    • 240-nm Pitch Aluminum Interconnects Formation by UHF-ECR Plasma Etching Incorporating TM Bias and Novel-Gas Chemistry (2001)
  • Kofuji Naoyuki ID: 9000019399226

    Articles in CiNii:1

    • Reduction in Microloading by High-Gas-Flow-Rate Electron Cyclotron Resonance Plasma Etching (1995)
  • Kofuji Naoyuki ID: 9000019471330

    Articles in CiNii:1

    • Investigation of Mask Deformation by Oxygen-Radical Irradiation during Resist Trimming (2009)
  • Kofuji Naoyuki ID: 9000019583063

    Articles in CiNii:1

    • Investigation of Mask Inclination Due to Oxygen-Radical Irradiation during Resist Trimming (2010)
  • Kofuji Naoyuki ID: 9000238613797

    Articles in CiNii:1

    • Negative Impact of Etched Si Area on Selectivity and Positive Impact of Photoelectric Current on Etched Profile in Gate Etching with Different Wafer Bias Frequencies (2013)
  • Kofuji Naoyuki ID: 9000258127162

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Reduction in Microloading by High-Gas-Flow-Rate Electron Cyclotron Resonance Plasma Etching. (1995)
  • Kofuji Naoyuki ID: 9000264259800

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan. (2014 from CiNii)

    Articles in CiNii:1

    • Line-edge roughness increase due to wiggling enhanced by initial pattern waviness (2014)
  • Kofuji Naoyuki ID: 9000291888180

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan. (2015 from CiNii)

    Articles in CiNii:1

    • Mechanism of wiggling enhancement due to HBr gas addition during amorphous carbon etching (2015)
  • Kofuji Naoyuki ID: 9000361691630

    Research & Development Group, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan. (2017 from CiNii)

    Articles in CiNii:1

    • Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF (2017)
  • Kofuji Naoyuki ID: 9000401648839

    Articles in CiNii:1

    • Reduction in Microloading by High-Gas-Flow-Rate Electron Cyclotron Resonance Plasma Etching (1995)
  • Kofuji Naoyuki ID: 9000401786401

    Articles in CiNii:1

    • Creation of a Degraded Layer on the Surface of Photoresist by Radical Irradiation (2010)
  • Kofuji Naoyuki ID: 9000402014780

    Articles in CiNii:1

    • Negative Impact of Etched Si Area on Selectivity and Positive Impact of Photoelectric Current on Etched Profile in Gate Etching with Different Wafer Bias Frequencies (2013)
  • Kofuji Naoyuki ID: 9000402021114

    Articles in CiNii:1

    • Line-edge roughness increase due to wiggling enhanced by initial pattern waviness (2014)
  • Kofuji Naoyuki ID: 9000402029960

    Articles in CiNii:1

    • Mechanism of wiggling enhancement due to HBr gas addition during amorphous carbon etching (2015)
  • Kofuji Naoyuki ID: 9000402043198

    Articles in CiNii:1

    • Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process (2017)
  • Kofuji Naoyuki ID: 9000402797595

    Articles in CiNii:1

    • Deposition profile of ammonium bromide in N2/HBr plasmas for high-aspect-ratio multilayer etching (2019)
  • Naoyuki Kofuji ID: 9000019411277

    Hitachi, Ltd., Central Research Laboratory, 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan (2010 from CiNii)

    Articles in CiNii:1

    • Creation of a Degraded Layer on the Surface of Photoresist by Radical Irradiation (2010)
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