Search Results1-20 of  33

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  • Kojima Kazutoshi ID: 9000241498219

    Articles in CiNii:1

    • Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition (Special Issue : Solid State Devices and Materials) (2013)
  • KOJIMA Kazutoshi ID: 9000001037102

    Ultra-Low-Loss Power Device Technology Research Body and Advanced Power Device Laboratory, R&D Association for Future Electron Devices (2003 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition (2003)
  • KOJIMA Kazutoshi ID: 9000005620775

    Institute of Materials Science, University of Tsukuba (1993 from CiNii)

    Articles in CiNii:1

    • High Magnetic Field Effect on Exciton Energies in CdTe/Cd_<1-x>Mn_xTe Quantum Wells Grown by MBE (1993)
  • KOJIMA Kazutoshi ID: 9000018527142

    Articles in CiNii:8

    • Improvement of 4H-SiC single crystals with low resistivity (2010)
    • Improvement of 4H-SiC single crystals with low resistivity (2010)
    • Conduction mechanisms in heavily Al-doped 4H-SiC epilayers : Dependencies of resistivity on Al concentration and temperature (2017)
  • KOJIMA Kazutoshi ID: 9000107377338

    National Institute of Advanced Industrial Science and Technology (AIST) (2003 from CiNii)

    Articles in CiNii:1

    • The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide (2003)
  • KOJIMA Kazutoshi ID: 9000283228116

    R & D partnership for Future Power Electronics Technology|National Institute of Advanced Industrial Science and Technology (2014 from CiNii)

    Articles in CiNii:1

    • Influence of Vicinal Off Angle on Surface Morphology of 4H-SiC Homoepitaxial Layer (2014)
  • Kojima Kazutoshi ID: 9000001622974

    National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center (2005 from CiNii)

    Articles in CiNii:2

    • Recent progress of SiC devices in AIST(Group IV Compound Semiconductors) (2005)
    • Recent progress of SiC devices in AIST(Group IV Compound Semiconductors) (2005)
  • Kojima Kazutoshi ID: 9000079763679

    Articles in CiNii:1

    • Evaluation of 4H-SiC Thermal Oxide Reliability Using Area-Scaling Method (2009)
  • Kojima Kazutoshi ID: 9000258154871

    National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan|Ultra-Low-Loss Power Device Technology Research Body, c/o AIST, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on (1120) Face. (2001)
  • Kojima Kazutoshi ID: 9000401702789

    Articles in CiNii:1

    • Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on $(11\bar{2}0)$ Face (2001)
  • Kojima Kazutoshi ID: 9000401723130

    Articles in CiNii:1

    • The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide (2003)
  • Kojima Kazutoshi ID: 9000401723156

    Articles in CiNii:1

    • Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition (2003)
  • Kojima Kazutoshi ID: 9000401977393

    Articles in CiNii:1

    • Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes (2019)
  • Kojima Kazutoshi ID: 9000401977654

    Articles in CiNii:1

    • Reducing warpage of thick 4H-SiC epitaxial layers by grinding the back of the substrate (2019)
  • Kojima Kazutoshi ID: 9000401980817

    Articles in CiNii:1

    • An empirical growth window concerning the input ratio of HCl/SiH4gases in filling 4H-SiC trench by CVD (2017)
  • Kojima Kazutoshi ID: 9000401981315

    Articles in CiNii:1

    • 2017-07-11 (2017)
  • Kojima Kazutoshi ID: 9000401983889

    Articles in CiNii:1

    • Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration (2018)
  • Kojima Kazutoshi ID: 9000401990909

    Articles in CiNii:1

    • Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process (2015)
  • Kojima Kazutoshi ID: 9000401991724

    Articles in CiNii:1

    • Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD (2015)
  • Kojima Kazutoshi ID: 9000401992400

    Articles in CiNii:1

    • 2016-01-28 (2016)
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