Search Results1-9 of  9

  • Komatsu Naoyoshi ID: 9000025016413

    Articles in CiNii:1

    • Properties of LaAlO film after waterless process using organic solvent containing anhydrous hydrofluoric acid (Special issue: Solid state devices and materials) (2010)
  • KOMATSU Naoyoshi ID: 9000006617037

    Graduate School of Engineering, Osaka University (2010 from CiNii)

    Articles in CiNii:9

    • Characterization of Aluminum Silicate (AlSiO) Insulator Films (2007)
    • Electrical Characterization of Yttriumaluminate Film (2007)
    • Oxidation of SiC and GaN Surface Using High Pressure and High Temperature Water (2007)
  • KOMATSU Naoyoshi ID: 9000107322567

    Graduate School of Engineering, Osaka University (2008 from CiNii)

    Articles in CiNii:1

    • Characterization of N-doped AlSiO film for wide bandgap semiconductors (2008)
  • Komatsu Naoyoshi ID: 9000258700927

    Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Study of SiC MIS structure using AlSiO thin film (2006)
  • Komatsu Naoyoshi ID: 9000397690077

    National institute of advanced industrial science and technology, Advanced power electronics research center (2018 from CiNii)

    Articles in CiNii:1

    • Variations of macrostep structures with solvent compositions in 4H-SiC solution growth (2018)
  • Komatsu Naoyoshi ID: 9000401778073

    Articles in CiNii:1

    • Low-Temperature and Rapid Oxidation of GaN Surface by Saturated Water Vapor at High Pressure (2009)
  • Komatsu Naoyoshi ID: 9000401786321

    Articles in CiNii:1

    • Properties of LaAlO Film after Waterless Process Using Organic Solvent Containing Anhydrous Hydrofluoric Acid (2010)
  • Komatsu Naoyoshi ID: 9000401786953

    Articles in CiNii:1

    • Very Smooth SiO2/SiC Interface Formed by Supercritical Water Oxidation at Low Temperature (2010)
  • Komatsu Naoyoshi ID: 9000402016281

    Articles in CiNii:1

    • Modulation of Growth Rate by Electric Current in Liquid-Phase Epitaxy of 4H-SiC (2013)
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