Search Results1-14 of  14

  • KOSUGI Ryoji ID: 9000403138297

    Articles in CiNii:1

    • Effect of Boron Incorporation on Slow Interface Traps in SiO2/4H-SiC Structures (2017)
  • KOSUGI Ryoji ID: 9000001622971

    National Institute of Advanced Industrial Science and Technology (AIST) (2013 from CiNii)

    Articles in CiNii:5

    • Recent progress of SiC devices in AIST(Group IV Compound Semiconductors) (2005)
    • Recent progress of SiC devices in AIST(Group IV Compound Semiconductors) (2005)
    • Various Problems of SiC MOSFET and Basic Technology (1999)
  • KOSUGI Ryoji ID: 9000046017810

    National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center:Ultra-Low-Loss Power Device Technology Research Body (2001 from CiNii)

    Articles in CiNii:1

    • Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on (1120) Face (2001)
  • KOSUGI Ryoji ID: 9000254373081

    Deputy General Manager, Research Dept.The Federation of Electric Power Companies. (1987 from CiNii)

    Articles in CiNii:1

    • The electric power supply & demand and future prospects for fuels. (1987)
  • Kosugi Ryoji ID: 9000258154873

    National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan|Ultra-Low-Loss Power Device Technology Research Body, c/o AIST, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on (1120) Face. (2001)
  • Kosugi Ryoji ID: 9000401702791

    Articles in CiNii:1

    • Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on $(11\bar{2}0)$ Face (2001)
  • Kosugi Ryoji ID: 9000401978400

    Articles in CiNii:1

    • 2019-04-10 (2019)
  • Kosugi Ryoji ID: 9000401978525

    Articles in CiNii:1

    • Selection of ion species suited for channeled implantation to be used in multi-epitaxial growth for SiC superjunction devices (2019)
  • Kosugi Ryoji ID: 9000401980816

    Articles in CiNii:1

    • An empirical growth window concerning the input ratio of HCl/SiH4gases in filling 4H-SiC trench by CVD (2017)
  • Kosugi Ryoji ID: 9000401981023

    Articles in CiNii:1

    • 2017-05-26 (2017)
  • Kosugi Ryoji ID: 9000401990910

    Articles in CiNii:1

    • Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process (2015)
  • Kosugi Ryoji ID: 9000401992399

    Articles in CiNii:1

    • 2016-01-28 (2016)
  • Kosugi Ryoji ID: 9000402033248

    Articles in CiNii:1

    • Influence of growth pressure on filling 4H-SiC trenches by CVD method (2015)
  • Kosugi Ryoji ID: 9000402041814

    Articles in CiNii:1

    • Strong impact of slight trench direction misalignment from $[11\bar{2}0]$ on deep trench filling epitaxy for SiC super-junction devices (2017)
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