Search Results1-14 of  14

  • KOTAKA Isamu ID: 9000004766177

    NTT Opto-electronics Laboratories (1997 from CiNii)

    Articles in CiNii:11

    • 高速InGaAs/InAlAs多重量子井戸光変調器 (超高速光エレクトロニクスの最前線<特集>) -- (超高速光変調) (1991)
    • Short Optical Pulse Generation And Modulation by MQW Modulator/ Laser Diode Integrated Light Source (1994)
    • LD with a spot-size converter fabricated on 2-inch wafer (1995)
  • KOTAKA Isamu ID: 9000004810313

    NTT Electronics, Corporation (1998 from CiNii)

    Articles in CiNii:5

    • Increased Saturation Intensity and High-Input-Power Allowable InGaAs/InAlAs MQW Modulators Buried in Semi-Insulating InP (1997)
    • Short Optical Pulse Generation and Modulation by a Multi-Section MQW Modulator/DFB Laser Integrated Light Source (1995)
    • High - Repetition Frequency Pulse Generation at over 40 GHz Using Mode - Locked Lasers Integrated with Electroabsorption Modulators (1998)
  • KOTAKA Isamu ID: 9000005561287

    NTT Opto-Electronics Laboratories (1994 from CiNii)

    Articles in CiNii:1

    • A New Photochemical Selective Silylation Technique for Resist Materials (1994)
  • KOTAKA Isamu ID: 9000017172415

    東京都下水道サービス(株) (2010 from CiNii)

    Articles in CiNii:1

    • Food Consciousness Reformation of Japanese People for Post Global Age (2010)
  • KOTAKA Isamu ID: 9000253323699

    NTT Electrical Communications Laboratories. (1986 from CiNii)

    Articles in CiNii:1

    • Junction Fabrication Technique by Double-Layer Resist Process (1986)
  • Kotaka Isamu ID: 9000004667013

    Musashino Electrical Communication Laboratory,N.T.T. (1974 from CiNii)

    Articles in CiNii:1

    • Correction of the Error in the Calculation of Diffraction Effect of a Baffle Using Kirchhoff-Huygens Fomula (1974)
  • Kotaka Isamu ID: 9000258122088

    NTT Opto–Electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi–shi, Kanagawa 243–01 (1994 from CiNii)

    Articles in CiNii:1

    • A New Photochemical Selective Silylation Technique for Resist Materials. (1994)
  • Kotaka Isamu ID: 9000258140585

    NTT Opto–electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi–shi 243–01, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP. (1998)
  • Kotaka Isamu ID: 9000283156857

    NTT Opto-electronics Laboratories (1989 from CiNii)

    Articles in CiNii:1

    • Large Quantum-Confined Stark-Effect in Quaternary InGaAlAs Quantum Wells (1989)
  • Kotaka Isamu ID: 9000284278786

    Articles in CiNii:1

    • New Silylation Bi-layer Resist System Employing Photochemical Selective Resist Silylation. (1994)
  • Kotaka Isamu ID: 9000392708486

    Articles in CiNii:1

    • Large Quantum-Confined Stark-Effect in Quaternary InGaAlAs Quantum Wells (1989)
  • Kotaka Isamu ID: 9000401641376

    Articles in CiNii:1

    • A New Photochemical Selective Silylation Technique for Resist Materials (1994)
  • Kotaka Isamu ID: 9000401642021

    Articles in CiNii:1

    • New Silylation Bi-layer Resist System Employing Photochemical Selective Resist Silylation (1994)
  • Kotaka Isamu ID: 9000401670918

    Articles in CiNii:1

    • Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP (1998)
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