Search Results1-10 of  10

  • Kotsuji Setsu ID: 9000025016611

    Articles in CiNii:1

    • Physical model for reset state of Ta2O5/TiO2-stacked resistance random access memory (Special issue: Solid state devices and materials) (2010)
  • KOTSUJI Setsu ID: 9000002166283

    System Devices Research Laboratories, NEC Corporation (2004 from CiNii)

    Articles in CiNii:2

    • Influences of Traps within HfSiON Bulk on Positive- and Negative-Bias Temperature Instability of HfSiON Gate Stacks (2004)
    • Breakdown Mechanisms and Lifetime Prediction for 90nm-node Low-power HfSiON/SiO_2 CMOSFETs (2004)
  • KOTSUJI Setsu ID: 9000006394477

    System Devices Research Laboratories, NEC Corporation (2007 from CiNii)

    Articles in CiNii:1

    • Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention (2007)
  • KOTSUJI Setsu ID: 9000107344133

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO_2 CMOSFETs (2005)
  • KOTSUJI Setsu ID: 9000107344265

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks (2005)
  • Kotsuji Setsu ID: 9000258181102

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks (2005)
  • Kotsuji Setsu ID: 9000258181158

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2 CMOSFETs (2005)
  • Kotsuji Setsu ID: 9000401735822

    Articles in CiNii:1

    • Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks (2005)
  • Kotsuji Setsu ID: 9000401735905

    Articles in CiNii:1

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2CMOSFETs (2005)
  • Kotsuji Setsu ID: 9000401786783

    Articles in CiNii:1

    • Physical Model for Reset State of Ta2O5/TiO2-Stacked Resistance Random Access Memory (2010)
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