Search Results1-20 of  95

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  • Kumagai Yoshinao ID: 9000024932716

    Articles in CiNii:1

    • Preparation of a freestanding AIN substrate by hydride vapor phase epitaxy at 1230℃ using (111)Si as a starting substrate (2007)
  • KUMAGAI Yoshinao ID: 9000001717952

    Texas Instruments Tsukuba Research and Development Center Limited (1998 from CiNii)

    Articles in CiNii:1

    • Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides (1998)
  • KUMAGAI Yoshinao ID: 9000005532852

    Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology (2009 from CiNii)

    Articles in CiNii:14

    • Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates (2005)
    • Halide Vapor Phase Epitaxy of Mg_xZn_<1-x>O Layers on Zn-Polar ZnO Substrates (2009)
    • Observation of HCl- and HF-Treated GaAs Surfaces by Measuring Contact Angles of Water Droplets (1994)
  • KUMAGAI Yoshinao ID: 9000045942871

    Institute of Materials Science, University of Tsukuba (1996 from CiNii)

    Articles in CiNii:1

    • Stability of Si(111)√<3>×√<3>R30°-B Surface in Air (1996)
  • KUMAGAI Yoshinao ID: 9000045948871

    Institute of Materials Science, University of Tsukuba (1994 from CiNii)

    Articles in CiNii:1

    • Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron Diffraction (1994)
  • KUMAGAI Yoshinao ID: 9000107314659

    Department of Applied Chemistry, Tokyo University of Agriculture and Technology (2004 from CiNii)

    Articles in CiNii:1

    • Study of Pulse Laser Assisted Metalorganic Vapor Phase Epitaxy of InGaN with Large Indium Mole Fraction (2004)
  • KUMAGAI Yoshinao ID: 9000107327737

    Department of Applied Chemistry, Tokyo University of Agriculture and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Influence of Lattice Constraint from InN and GaN Substrate on Relationship between Solid Composition of In_<x>Ga_<1-x>N film and Input Mole Ratio during Molecular Beam Epitaxy (2003)
  • KUMAGAI Yoshinao ID: 9000107354633

    Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology (2006 from CiNii)

    Articles in CiNii:1

    • Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy (2006)
  • KUMAGAI Yoshinao ID: 9000107355784

    Institute of Materials Science, University of Tsukuba (1997 from CiNii)

    Articles in CiNii:1

    • Formation of β-FeSi_2 Layers on Si(001) Substrates (1997)
  • KUMAGAI Yoshinao ID: 9000107356471

    Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Theoretical Investigation of Arsenic Desorption from GaAs(001) Surfaces under an Atmosphere of Hydrogen (2003)
  • KUMAGAI Yoshinao ID: 9000107356568

    Department of Applied Chemistry,Faculty of Technoloty, Tokyo University of Agricultrue and Technoloty (2003 from CiNii)

    Articles in CiNii:1

    • High Temperature Ramping Rate for GaAs (111)A Substrate Covered with a Thin GaN Buffer Layer for Thick GaN Growth at 1000℃ (2003)
  • KUMAGAI Yoshinao ID: 9000248242291

    Department of Applied Chemistry, Tokyo University of Agriculture and Technology (2012 from CiNii)

    Articles in CiNii:1

    • Structural and Optical Properties of Carbon-Doped AIN Substrates Grown by Hydride Vapor Phase Epitaxy Using AIN Substrates Prepared by Physical Vapor Transport (2012)
  • KUMAGAI Yoshinao ID: 9000248242398

    Denartment of Applied Chemistry, Tokyo University of Agriculture and Technology (2012 from CiNii)

    Articles in CiNii:1

    • Deep-Ultraviolet Light-Emitting Diodes Fabricated on AIN Substrates Prepared by Hydride Vapor Phase Epitaxy (2012)
  • KUMAGAI Yoshinao ID: 9000261681384

    Tokyo University of Agriculture and Technology (2013 from CiNii)

    Articles in CiNii:1

    • Report on OPIC Conference on LED and Its Industrial Application '13 (LEDIA'13) (2013)
  • KUMAGAI Yoshinao ID: 9000265571185

    Department of Applied Chemistry, Tokyo University of Agriculture and Technology (2013 from CiNii)

    Articles in CiNii:1

    • Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AIN Substrates Prepared by Hydride Vapor Phase Epitaxy (2013)
  • KUMAGAI Yoshinao ID: 9000403676887

    Articles in CiNii:1

    • InGaN/GaNおよびInGaN/InN気相成長における気相-固相関係 : 結晶成長理論シンポジウム (2002)
  • Kumagai Yoshinao ID: 9000025072528

    Articles in CiNii:1

    • Solid composition control of Mg[x]Zn1-xO in halide vapor phase epitaxy (2010)
  • Kumagai Yoshinao ID: 9000025084835

    Articles in CiNii:1

    • In situ gravimetric monitoring of decomposition rate on surface of (1012) R-plane sapphire for high-temperature growth of nonpolar AIN (2008)
  • Kumagai Yoshinao ID: 9000060418173

    Articles in CiNii:1

    • Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy (2011)
  • Kumagai Yoshinao ID: 9000074424693

    Articles in CiNii:1

    • Theoretical Analysis for Surface Reconstruction of AlN and InN in the Presence of Hydrogen (2007)
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