Search Results1-5 of  5

  • KUNIMUNE Yorinobu ID: 9000004970023

    NEC Electron Devices, ULSI Device Development Division (2002 from CiNii)

    Articles in CiNii:1

    • A 100nm node CMOS technology for practical SOC application (2002)
  • KUNIMUNE Yorinobu ID: 9000005746252

    ULSI Device Development Division, NEC Corporation (2003 from CiNii)

    Articles in CiNii:3

    • Dual Damascene Interconnect Technology for 130-nm-node Complementary Metal-Oxide-Semiconductor Devices Using Ladder-Oxide Film (2003)
    • Two-Dimensional Dopant Profiling of nMOSFETs with Shallow-Extensions Using Electrochemical Etching Technique (1999)
    • Lateral Diffusion Distance Measurement of 40-80 nm Junctions by Etching/TEM-Electron Energy Loss Spectroscopy Method (1999)
  • Kunimune Yorinobu ID: 9000401679930

    Articles in CiNii:1

    • 1999-04-30 (1999)
  • Kunimune Yorinobu ID: 9000401718925

    Articles in CiNii:1

    • 2003-09-15 (2003)
  • Kunimune Yorinobu ID: 9000402025341

    Articles in CiNii:1

    • High resolution secondary ion mass spectrometry analysis of hydrogen behavior in SiO2/SiN/SiO2films with thermal treatment (2014)
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