Search Results1-20 of  82

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  • KUZUHARA Masaaki ID: 1000020377469

    Graduate School of Engineering, University of Fukui (2012 from CiNii)

    Articles in CiNii:37

    • I-V and C-V characteristics of p-GaN Schottky contacts : Metal work function dependence (2007)
    • Present status of GaN-based electron devices with high efficiency (2012)
    • Theoretical Analysis of Enhancement-mode AlGaN/GaN HEMTs (2006)
  • KUZUHARA Masaaki ID: 9000001718504

    ULSI Device Development Laboratories, NEC Corporation (1998 from CiNii)

    Articles in CiNii:1

    • Analysis of Electric Field Distribution in Novel GaAs MESFET with a Field-Modulating Plate (1998)
  • KUZUHARA Masaaki ID: 9000002171681

    Department of Electrical and Electronics Engineering University of Fukui (2005 from CiNii)

    Articles in CiNii:1

    • Theoretical Analysis of Breakdown Characteristics for Recessed Gate GaAs MESFETs (2005)
  • KUZUHARA Masaaki ID: 9000002173438

    Graduate School of Engineering, University of Fukui (2007 from CiNii)

    Articles in CiNii:2

    • Direct Calculation of Source Parasitic Resistance in AlGaAs/GaAs HEMTs (2006)
    • Optimum Rapid Thermal Activation for Mg-doped p-type GaN (2007)
  • KUZUHARA Masaaki ID: 9000004741371

    Advanced HF Device R&D Center, R&D Association for Future Electron Devices (2004 from CiNii)

    Articles in CiNii:143

    • Saturation velocity in GaAs (1996)
    • GaN-based high-frequency devices for the advanced information and communications age. (2000)
    • Low Resistance Contact and K-Band High Power Performance for AlGaN/GaN HJFETs (2002)
  • KUZUHARA Masaaki ID: 9000004812544

    Graduate School of Natural Science and Technology, Kanazawa University (2005 from CiNii)

    Articles in CiNii:8

    • Power Heterojunction FETs for Low-Voltage Digital Cellular Applications (1995)
    • Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications (1997)
    • Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain (1999)
  • KUZUHARA Masaaki ID: 9000004815482

    ULSI Device Development Laboratories, NEC Corporation (1997 from CiNii)

    Articles in CiNii:1

    • Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications (1997)
  • KUZUHARA Masaaki ID: 9000004819336

    Kansai Eletronic Reseach Laboratories (1999 from CiNii)

    Articles in CiNii:1

    • Special Issue on Low Distortion Technology for Microwave Devices and Circuits Communications (1999)
  • KUZUHARA Masaaki ID: 9000004819443

    Kansai Electronics Laboratories, NEC Corporation (1999 from CiNii)

    Articles in CiNii:1

    • Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance (1999)
  • KUZUHARA Masaaki ID: 9000004837384

    Photonic and Wireless Devices Research Laboratories, NEC Corporation (2002 from CiNii)

    Articles in CiNii:1

    • High Power Density and Low Distortion InGaP Channel FETs with Field-Modulating Plate (2002)
  • KUZUHARA Masaaki ID: 9000005534408

    Department of Electrical Engineering, Kyoto University (1980 from CiNii)

    Articles in CiNii:1

    • Properties of Zn-Doped P-Type In_<0.53>Ga_<0.47>As on InP Substrate (1980)
  • KUZUHARA Masaaki ID: 9000005780443

    Department of Electrical Engineering, Kyoto University (1981 from CiNii)

    Articles in CiNii:1

    • lnGaAsP-InP Heterojunction Phototransistors and Light Amplifiers (1981)
  • KUZUHARA Masaaki ID: 9000006838468

    Graduate School of Engineering, University of Fukui (2009 from CiNii)

    Articles in CiNii:3

    • Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures (2009)
    • Simulation of tunneling contact resistivity in non-polar AlGaN/GaN heterostructures (2008)
    • Simulation of tunneling contact resistivity in non-polar AlGaN/GaN heterostructures (2008)
  • KUZUHARA Masaaki ID: 9000014597199

    Graduate School of Engineering, University of Fukui (2009 from CiNii)

    Articles in CiNii:1

    • Electron Devices Based on GaN and Related Nitride Semiconductors (2009)
  • KUZUHARA Masaaki ID: 9000014607777

    Graduate School of Engineering, University of Fukui (2009 from CiNii)

    Articles in CiNii:1

    • Electron Devices Based on GaN and Related Nitride Semiconductors (2009)
  • KUZUHARA Masaaki ID: 9000015769062

    Photonic and Wireless Devices Research Laboratories, NEC Corporation (2003 from CiNii)

    Articles in CiNii:1

    • GaAs-based high-frequency and high-speed devices (2003)
  • KUZUHARA Masaaki ID: 9000017683386

    Department of Electrical and Electronics Engineering, University of Fukui (2008 from CiNii)

    Articles in CiNii:1

    • FOREWORD (2008)
  • KUZUHARA Masaaki ID: 9000018279607

    Kyoto University (2010 from CiNii)

    Articles in CiNii:1

    • FOREWORD (2010)
  • KUZUHARA Masaaki ID: 9000019096210

    Graduate School of Engineering, University of Fukui (2012 from CiNii)

    Articles in CiNii:5

    • Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures (2011)
    • Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures (2011)
    • Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (2011)
  • KUZUHARA Masaaki ID: 9000020526102

    Articles in CiNii:1

    • Characteristic Findings of Metrizamide CT Cisternography in an Epidermoid in the Posterior Fossa (1982)
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