Search Results1-20 of  50

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  • KACHI Tetsu ID: 9000404506751

    Toyota Central R&D Labs., Inc. (2012 from CiNii)

    Articles in CiNii:1

    • Automotive applications of wide-gap semiconductor power devices (2012)
  • KACHI Tetsu ID: 9000404508911

    Toyota Central R&D Labs., Inc. (2005 from CiNii)

    Articles in CiNii:1

    • GaN-based power device technology (2005)
  • Kachi Tetsu ID: 9000025021951

    Articles in CiNii:1

    • Electrical characterization of GaN p-n junctions grown on freestanding GaN substrates by metal-organic chemical vapor deposition (2011)
  • KACHI Tetsu ID: 9000001884815

    Toyota Central R&D Laboratories, Inc. (2008 from CiNii)

    Articles in CiNii:2

    • Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method (2007)
    • GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching (2008)
  • KACHI Tetsu ID: 9000002174308

    TOYOTA CENTRAL R&D LABS., INC (2006 from CiNii)

    Articles in CiNii:1

    • Recent Advances on GaN Power Devices (2006)
  • KACHI Tetsu ID: 9000004779000

    Articles in CiNii:39

    • GaN-based power device technology (2005)
    • Measurement of Gloss for Wrinkly Texture of Automobile Interior (1995)
    • Excess carrier lifetime measurement in GaN etched by ICP with the μ-PCD method (2005)
  • KACHI Tetsu ID: 9000005757842

    Toyota Central Research and Development Laboratories, Inc. (2002 from CiNii)

    Articles in CiNii:2

    • N/Ge Co-Implantation into GaN for N-Type Doping (2001)
    • N/Ge Co-Implantation into GaN for N-Type Doping (2002)
  • KACHI Tetsu ID: 9000005841787

    KACHI,TetsuToyota Central Research & Development Laboratories, Inc. (2001 from CiNii)

    Articles in CiNii:1

    • Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure (2001)
  • KACHI Tetsu ID: 9000006838247

    Toyota Central R & D Laboratories, Inc. (2008 from CiNii)

    Articles in CiNii:1

    • Recent Advances on GaN Vertical Power Devices (2008)
  • KACHI Tetsu ID: 9000006839145

    Toyota Central R & D Laboratories, Inc. (2008 from CiNii)

    Articles in CiNii:1

    • Recent Advances on GaN Vertical Power Devices (2008)
  • KACHI Tetsu ID: 9000017504668

    Toyota Central R&D Labs., Inc. (2010 from CiNii)

    Articles in CiNii:1

    • Characteristics of GaN p-n diode with damage layer induced by ICP plasma process (2010)
  • KACHI Tetsu ID: 9000019238090

    Toyota Central R&D Labs. Inc. (2012 from CiNii)

    Articles in CiNii:1

    • FOREWORD (2012)
  • KACHI Tetsu ID: 9000021629742

    Toyota Central Research and Development Labs., Inc. (2012 from CiNii)

    Articles in CiNii:1

    • FOREWORD (2012)
  • KACHI Tetsu ID: 9000107375598

    Articles in CiNii:1

    • Characteristics of GaN p-n diode with damage layer induced by ICP plasma process (2010)
  • KACHI Tetsu ID: 9000404347294

    Articles in CiNii:1

    • Overview of carrier compensation in GaN layers grown by MOVPE: Toward the application of vertical power devices (2019)
  • Kachi Tetsu ID: 9000083525210

    Articles in CiNii:1

    • Interface Properties of Al$_{2}$O$_{3}$/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces (2012)
  • Kachi Tetsu ID: 9000238294401

    Articles in CiNii:1

    • Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer (2008)
  • Kachi Tetsu ID: 9000242078043

    TOYOTA Central R&D Labs., Inc.|Japan Science and Technology Agency (JST), CREST (2013 from CiNii)

    Articles in CiNii:1

    • Current status of GaN power devices (2013)
  • Kachi Tetsu ID: 9000252967626

    Toyota Central Research & Development Lab., Inc. (1988 from CiNii)

    Articles in CiNii:1

    • New Approach to Low-Temperature Epitaxial Growth of GaAs by Photostimulated Metalorganic Chemical Vapor Deposition (1988)
  • Kachi Tetsu ID: 9000252983393

    TOYOTA Central R & D Labs., Inc. (1992 from CiNii)

    Articles in CiNii:1

    • Excitation Spectra of the Visible Photoluminescence of Anodized Porous Silicon (1992)
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