Search Results1-20 of  82

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  • Kakibayashi Hiroshi ID: 9000009549763

    Articles in CiNii:1

    • Electron Microscopy for Compound Semiconductors (1985)
  • KAKIBAYASHI Hiroshi ID: 9000000788637

    Central Research Laboratory, Hitachi, Ltd (1996 from CiNii)

    Articles in CiNii:1

    • High Resolution X-Ray Elemental Mapping Using 300-kV Field-Emission TEM (1996)
  • KAKIBAYASHI Hiroshi ID: 9000000789001

    Central Research Laboratory, Hitachi Ltd (1997 from CiNii)

    Articles in CiNii:1

    • Position dependence of the visibility of a single gold atom in silicon crystals in HAADF-STEM image simulation (1997)
  • KAKIBAYASHI Hiroshi ID: 9000001249304

    Central Research Laboratory, Hitachi Ltd (2001 from CiNii)

    Articles in CiNii:1

    • Three-dimensional STEM for observing nanostructures (2001)
  • KAKIBAYASHI Hiroshi ID: 9000002165389

    Central Research Laboratory, Hitachi, Ltd. (1999 from CiNii)

    Articles in CiNii:1

    • Current Status and Future Trend of Analytical Instruments for Failure Analyses in Si Process (1999)
  • KAKIBAYASHI Hiroshi ID: 9000004817247

    The authors are with Central Research Laboratory, Hitachi Ltd. (1998 from CiNii)

    Articles in CiNii:5

    • Simulation Study of Noise Influene in 3-Dimensional Reconstruction using High-Angle Hollow-Cone Dark-Field Transmission Electron Microscope Images (1997)
    • Fine Structure of Crack in Yttrium Oxide and Aluminum Oxide Fluxed Silicon Nitride (1985)
    • Hetero-Epitaxial PbZr_<0.48>Ti_<0.52>O_3 Capacitors with Oxide Electrodes (1998)
  • KAKIBAYASHI Hiroshi ID: 9000005751243

    Central Research laboratory, Hitachi Ltd. (2000 from CiNii)

    Articles in CiNii:1

    • Highly Accurate Composition Analysis of(Pb, Zr)TiO_3 Using a Scanning Electron Microscope/Energy Dispersive X-Ray Spectrometer (2000)
  • KAKIBAYASHI Hiroshi ID: 9000018661171

    Nanotechnology Products Business Group, Hitachi High-Technologies Corp. (2011 from CiNii)

    Articles in CiNii:1

    • Development of an Environmental TEM and its Applications (2011)
  • KAKIBAYASHI Hiroshi ID: 9000018697176

    Hitachi High-Technologies Corporation (2011 from CiNii)

    Articles in CiNii:1

    • Three-Dimensional Structure Analysis of Metal-Oxide-Insulator Field Effect Transistors with Different Electrical Properties by Scanning Transmission Electron Microscopy (2011)
  • KAKIBAYASHI Hiroshi ID: 9000020221321

    日立製作所中央研究所 (1989 from CiNii)

    Articles in CiNii:1

    • Composition analysis method of superstructure using equal thickness fringe. (1989)
  • KAKIBAYASHI Hiroshi ID: 9000020233659

    Central Research Lab., Hitachi, Ltd. (1987 from CiNii)

    Articles in CiNii:1

    • A new method for the composition analysis of superstructure. (1987)
  • KAKIBAYASHI Hiroshi ID: 9000021455026

    Department of Nuclear Engineering, Faculty of Engineering, Hokkaido University (1979 from CiNii)

    Articles in CiNii:1

    • Surface Segregation and Growth Process of Altered Layer on Cu-Ni Clean Surfaces (1979)
  • KAKIBAYASHI Hiroshi ID: 9000253324030

    Central Research Labora-tory, Hitachi, Ltd. (1987 from CiNii)

    Articles in CiNii:1

    • New Electron Microscopy for Composition Analysis of Superstructure (1987)
  • KAKIBAYASHI Hiroshi ID: 9000253648392

    Central Research Laboratory, Hitachi Ltd. (1994 from CiNii)

    Articles in CiNii:1

    • Special Issue on Frontiers of Epitaxy Research. Growth and Characterization of Semiconductor Whiskers. (1994)
  • KAKIBAYASHI Hiroshi ID: 9000404507656

    Central Research Laboratory, Hitachi, Ltd. (2003 from CiNii)

    Articles in CiNii:1

    • Failure analyses of ULSI using new concept analytical instruments (2003)
  • Kakibayashi Hiroshi ID: 9000016917165

    Articles in CiNii:1

    • A Study of the Growth Process of Altered Layer during Ion-bombardment on Clean Surfaces of Cu-Ni Alloys (1979)
  • Kakibayashi Hiroshi ID: 9000252758973

    Central Research Laboratory, Hitachi, Ltd. (1985 from CiNii)

    Articles in CiNii:1

    • Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/Al<I><SUB>x</SUB></I>Ga<SUB>1−<I>x</I></SUB> As Multilayer Structure (1985)
  • Kakibayashi Hiroshi ID: 9000252763169

    Central Research Laboratory, Hitachi Ltd. (1990 from CiNii)

    Articles in CiNii:1

    • Influence of Substrate Misorientation on Surface Morphology of Be-Doped GaAs Grown by MBE (1990)
  • Kakibayashi Hiroshi ID: 9000252952168

    Central Research Laboratory, Hitachi Ltd. (1982 from CiNii)

    Articles in CiNii:1

    • New Structure on TiN(001) Cleaved Surfaces (1982)
  • Kakibayashi Hiroshi ID: 9000252954982

    Central Research Laboratory, Hitachi, Ltd. (1984 from CiNii)

    Articles in CiNii:1

    • Structure Analysis of Oval Defect on Molecular Beam Epitaxial GaAs Layer by Cross-Sectional Transmission Electron Microscopy Observation (1984)
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