Search Results1-20 of  64

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  • Kakushima Kuniyuki ID: 9000018691197

    Articles in CiNii:1

    • Effects of scattering direction of hot electrons in the drain of ballistic n[+]-i-n[+] diode (2011)
  • Kakushima Kuniyuki ID: 9000018691284

    Articles in CiNii:1

    • Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5nm (Special issue: Dielectric thin films for future electron devices: science and technology) (2011)
  • Kakushima Kuniyuki ID: 9000018691291

    Articles in CiNii:1

    • Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of chemical vapor deposition and atomic layer deposition processes (Special issue: Dielectric thin films for future electron devices: science and technology) (2011)
  • Kakushima Kuniyuki ID: 9000019229667

    Articles in CiNii:1

    • Electrical Properties of CeO₂/La₂O₃ Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition (2012)
  • Kakushima Kuniyuki ID: 9000024933131

    Articles in CiNii:1

    • Characteristics of ultrathin lanthanum oxide films on germanium substrate: comparison with those on silicon substrate (2007)
  • KAKUSHIMA Kuniyuki ID: 9000001650477

    Tokyo Institute of Technology (2007 from CiNii)

    Articles in CiNii:2

    • Electrical Conductivity of Lambda DNA-Pd Wire (2005)
    • In situ Visualization of Degradation of Silicon Field Emitter Tips (2007)
  • KAKUSHIMA Kuniyuki ID: 9000004751003

    Fujita Hiroyuki Lab. IIS the university of tokyo (2006 from CiNii)

    Articles in CiNii:13

    • Micro-hole Fubrication using a Silicon-mold (2002)
    • A Micromachined Nano tweezers Integrated with a Thermal Expansion Micro Actuator (2003)
    • Application of Electro Deposition Photoresist as a sacrificial layer to the Circular Micro Hole Forming (2003)
  • KAKUSHIMA Kuniyuki ID: 9000016498630

    Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology (2012 from CiNii)

    Articles in CiNii:4

    • Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50nm Node MOSFETs (2010)
    • Equivalent Noise Temperature Representation for Scaled MOSFETs (2010)
    • Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO_2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors (2012)
  • KAKUSHIMA Kuniyuki ID: 9000016800778

    Institude of Industrial Science, The university of Tokyo, Fujita Lab. (2004 from CiNii)

    Articles in CiNii:1

    • Bias Voltage Modulated AFM Oxidation for Fabrication of Nanogap Seperated Silicon Electrodes (2004)
  • KAKUSHIMA Kuniyuki ID: 9000018777774

    Tokyo Institute of Technology Frontier Research Center (2011 from CiNii)

    Articles in CiNii:1

    • Study of Trap Generation in the Sc_2O_3/La_2O_3/SiO_x Gate Dielectric Stack by Scanning Tunneling Microscopy (2011)
  • KAKUSHIMA Kuniyuki ID: 9000019955496

    Tokyo Institute of Technology Frontier Research Center (2011 from CiNii)

    Articles in CiNii:1

    • Study of Trap Generation in the Sc2O3/La2O3/SiOx Gate Dielectric Stack by Scanning Tunneling Microscopy (2011)
  • KAKUSHIMA Kuniyuki ID: 9000107311941

    Articles in CiNii:1

    • Si Nanowire FET Technology (2012)
  • KAKUSHIMA Kuniyuki ID: 9000107350109

    Institue of Industrial Science, the University of Tokyo (2004 from CiNii)

    Articles in CiNii:1

    • Atomic Force Microscope Cantilever Array for Parallel Lithography of Quantum Devices (2004)
  • KAKUSHIMA Kuniyuki ID: 9000107378978

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (2011 from CiNii)

    Articles in CiNii:1

    • Experimental Characterization of Quasi-Fermi Potential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry (2011)
  • KAKUSHIMA Kuniyuki ID: 9000265571249

    Frontier Collaborative Research Center, Tokyo Institute of Technology (2013 from CiNii)

    Articles in CiNii:1

    • Temperature-Independent Two-Dimensional Hole Gas Confined at GaN/AlGaN Heterointerface (2013)
  • KAKUSHIMA Kuniyuki ID: 9000403817949

    Articles in CiNii:1

    • Control of Flat Band Voltage by Partial Incorporation of La2O3 or Sc2O3 into MfO2 in Metal/MfO2/SiO2/Si MOS Capacitors (2007)
  • Kakushima Kuniyuki ID: 9000006303021

    School of Engineering, Tokyo Institute of Technology (2017 from CiNii)

    Articles in CiNii:21

    • Feasibility of Si Interfacial Layer Insertion for La_2O_3/Ge MOS Device (2008)
    • Gate Stack Technology (2012)
    • Characterization of interfaces between ultrathin high-k dielectric films and Si(001) by high-resolution RBS/ERD (2006)
  • Kakushima Kuniyuki ID: 9000021311775

    Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology (2006 from CiNii)

    Articles in CiNii:1

    • Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing (2006)
  • Kakushima Kuniyuki ID: 9000021372248

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (2007 from CiNii)

    Articles in CiNii:1

    • Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress (2007)
  • Kakushima Kuniyuki ID: 9000025017547

    Articles in CiNii:1

    • Analysis of threshold voltage variation in fin field effect transistors: separation of short channel effects (2010)
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