Search Results1-20 of  72

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  • Kamakura Yoshinari ID: 9000024979450

    Articles in CiNii:1

    • Phenomenological model for stress and relaxation processes of resistance drift in magnetic tunnel junctions (Special issue: Solid state devices and materials) (2011)
  • Kamakura Yoshinari ID: 9000025016654

    Articles in CiNii:1

    • Molecular dynamics simulation of heat transport in silicon nano-structures covered with oxide films (Special issue: Solid state devices and materials) (2010)
  • Kamakura Yoshinari ID: 9000025069866

    Articles in CiNii:1

    • Characteristics of Hot Hole Injection, Trapping, and Detrapping in Gate Oxide of Polycrystalline Silicon Thin-Film Transistors (Special Issue : Solid State Devices and Materials (1)) (2012)
  • Kamakura Yoshinari ID: 9000241498347

    Articles in CiNii:1

    • Analytic Circuit Model of Ballistic Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor for Transient Analysis (Special Issue : Solid State Devices and Materials) (2013)
  • Kamakura Yoshinari ID: 9000241752976

    Articles in CiNii:1

    • Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications (2013)
  • KAMAKURA Yoshinari ID: 1000070294022

    Osaka University, Graduate School of Engineering (2015 from CiNii)

    Articles in CiNii:69

    • Degradation of direct-tunneling gate oxide under hot hole injection (2001)
    • Long-term reliability of ultra-thin gate oxides (2001)
    • Theoretical Calculation of Mobility Enhancement of Strained Si pMOSFETs : Comparison between Uni-and Biaxial Stress(Group IV Compound Semiconductors) (2005)
  • KAMAKURA Yoshinari ID: 9000001716643

    Department of Electronics and Information Systems, Osaka University (1997 from CiNii)

    Articles in CiNii:1

    • New Nondestructive Carrier Profiling for Ion Implanted Si Using Infrared Spectroscopic Ellipsometry (1997)
  • KAMAKURA Yoshinari ID: 9000002175045

    Graduate School of Engineering, Osaka University (2008 from CiNii)

    Articles in CiNii:2

    • Coarse-Grain 3D Quantum Simulations of Nanoscale MOSFET (2007)
    • R-matrix Theory of Quantum Transport in Nanoscale Electronic Devices (2008)
  • KAMAKURA Yoshinari ID: 9000004838653

    Department of Electronics and Information Systems, Osaka University (2004 from CiNii)

    Articles in CiNii:8

    • Effect of Oxide Breakdown on Complementary Metal Oxide Semiconductor Circuit Operation and Reliability (2004)
    • Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor (2004)
    • Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current (2001)
  • KAMAKURA Yoshinari ID: 9000107314035

    Articles in CiNii:1

    • Impact Excitation of Carriers in Diamond under Extremely High Electric Fields (2001)
  • KAMAKURA Yoshinari ID: 9000107315438

    Division of Electrical, Electronic and Information Engineering, Osaka University (2011 from CiNii)

    Articles in CiNii:1

    • Enhancement of Current Density in Asymmetric Horn-Shaped Channel : Ensemble Monte-Carlo/Molecular Dynamics Simulation (2011)
  • KAMAKURA Yoshinari ID: 9000107316041

    Graduate School of Engineering, Osaka University (2011 from CiNii)

    Articles in CiNii:1

    • Characterization and Modeling of Drain Overshoot Current in Poly-Si Thin Film Transistors (2011)
  • KAMAKURA Yoshinari ID: 9000107366747

    Department of Electronics and Information Systems, Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • Two-Dimensional Simulation of Quantum Tunneling across Barrier with Surface Roughness (2005)
  • KAMAKURA Yoshinari ID: 9000258739843

    Japan Science and Technology Agency, CREST (2013 from CiNii)

    Articles in CiNii:1

    • Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors in the Ballistic Transport Limit (2013)
  • KAMAKURA Yoshinari ID: 9000261681170

    Japan Science and Technology Agency, CREST (2013 from CiNii)

    Articles in CiNii:1

    • Increased Subthreshold Current due to Source-Drain Direct Tunneling in Ultrashort-Channel III-V Metal-Oxide-Semiconductor Field-Effect Transistors (2013)
  • KAMAKURA Yoshinari ID: 9000304970669

    Graduate School of Engineering, Osaka University (2014 from CiNii)

    Articles in CiNii:1

    • Analysis of ultra-fast image sensor with Monte Carlo device simulation technique (2014)
  • KAMAKURA Yoshinari ID: 9000309985858

    Graduate School of Engineering, Osaka University:CREST, Japan Science and Technology Agency (2014 from CiNii)

    Articles in CiNii:1

    • Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method (2014)
  • KAMAKURA Yoshinari ID: 9000316623490

    Graduate School of Engineering, Osaka University:JST-CREST (2015 from CiNii)

    Articles in CiNii:1

    • Invited Talk : Coupled Monte Carlo Simulation of Transient Electron-Phonon Transport in Small FETs (2015)
  • KAMAKURA Yoshinari ID: 9000345251882

    Graduate School of Engineering, Osaka University (2016 from CiNii)

    Articles in CiNii:1

    • Crosstalk analysis and a cancellation method for an image sensor operating at 1Gfps (2016)
  • KAMAKURA Yoshinari ID: 9000350640903

    Graduate School of Engineering, Osaka University (2017 from CiNii)

    Articles in CiNii:1

    • Phonon-Drag Effect on Seebeck Coefficient in Co-Doped Si Wire with Submicrometer-Scaled Cross Section (2017)
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