Search Results1-20 of  142

  • Kamiyama Satoshi ID: 9000403789578

    Articles in CiNii:1

    • Deep placement of lime nitrogen promotes nitrogen fixation and seed yield of soybean with efficient utilization rates (2010)
  • Kamiyama Satoshi ID: 9000025017580

    Articles in CiNii:1

    • Study of a negative threshold voltage shift in positive bias temperature instability and a positive threshold voltage shift the negative bias temperature instability of yttrium-doped HfO2 gate dielectrics (Special issue: Solid state devices and materials) (2010)
  • Kamiyama Satoshi ID: 9000025030656

    Articles in CiNii:1

    • Extended scalability of HfON/SiON gate stack down to 0.57nm equivalent oxide thickness with high carrier mobility by post-deposition annealing (Special issue: Solid state devices and materials) (2009)
  • KAMIYAMA Satoshi ID: 9000000255528

    System Devices and Fundamental Research, NEC Corporation (2000 from CiNii)

    Articles in CiNii:1

    • Ta_2O_5 capacitor technology for DRAM (2000)
  • KAMIYAMA Satoshi ID: 9000001721834

    Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. (1995 from CiNii)

    Articles in CiNii:1

    • Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Highly Doped Saturable Absorbing Layer (1995)
  • KAMIYAMA Satoshi ID: 9000002168135

    Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc. (2004 from CiNii)

    Articles in CiNii:1

    • High Quality Hf-Silicate Gate Dielectrics Fabrication by Atomic Layer Deposition (ALD) Technology (2004)
  • KAMIYAMA Satoshi ID: 9000002172748

    Semiconductor Leading Edge Technologies, Inc. (2006 from CiNii)

    Articles in CiNii:1

    • High-resolution RBS analysis of Si-dielectrics interfaces (2006)
  • KAMIYAMA Satoshi ID: 9000002177251

    Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc. (2007 from CiNii)

    Articles in CiNii:1

    • Production-Worthy HfSiON Gate Dielectric Fabrication Enabling EOT Scalability Down to 0.86nm and Excellent Reliability by Polyatomic Layer Chemical Vapor Deposition Technique (2007)
  • KAMIYAMA Satoshi ID: 9000004820995

    Faculty of Science and Technology, Meijo University (2011 from CiNii)

    Articles in CiNii:26

    • ZrB_2 Substrate for Nitride Semiconductors (2003)
    • Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation (2004)
    • Study on the Seeded Growth of AlN Bulk Crystals by Sublimation (2004)
  • KAMIYAMA Satoshi ID: 9000004925863

    Takushoku University (1998 from CiNii)

    Articles in CiNii:1

    • A degeneration control method for Vibratory Gyroscope (1998)
  • KAMIYAMA Satoshi ID: 9000004960798

    Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. (1996 from CiNii)

    Articles in CiNii:2

    • The Low Distortion Design of MQW-EA Modulator (1996)
    • Gain properties of AlGaInP strained multi-quantum well lasers (1994)
  • KAMIYAMA Satoshi ID: 9000005458402

    Laboratory of Medical Zoology, School of Health Sciences, Faculty of Medicine, University of the Ryukyus (1990 from CiNii)

    Articles in CiNii:3

    • 7 那覇市周辺における犬糸状虫の伝搬蚊に関する研究 (1989)
    • 12 幼若ホルモン類似体メトプレンによる沖縄産蚊幼虫に対する羽化阻害実験とメトプレンの残効性について (1989)
    • Effects of methoprene, a juvenile hormone analogue, on mosquito larvae from the Ryukyu Archipelago, Japan (1990)
  • KAMIYAMA Satoshi ID: 9000005561073

    Matsushita Electric Ind. Co., Ltd., Semiconductor Research Center (1996 from CiNii)

    Articles in CiNii:4

    • Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers (1995)
    • Strain Effect on 630 nm GaInP/AlGaInP Multi-Quantum Well Lasers (1994)
    • Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser (1995)
  • KAMIYAMA Satoshi ID: 9000107313628

    Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University (2007 from CiNii)

    Articles in CiNii:1

    • Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy (2007)
  • KAMIYAMA Satoshi ID: 9000107338118

    Department of Materials Science and Engineering, Meijo University (2011 from CiNii)

    Articles in CiNii:1

    • Microstructures of GaInN/GaInN Superlattices on GaN Substrates (2011)
  • KAMIYAMA Satoshi ID: 9000107338230

    Faculty of Science and Technology, Meijo University (2011 from CiNii)

    Articles in CiNii:1

    • GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate (2011)
  • KAMIYAMA Satoshi ID: 9000107341735

    Faculty of Science and Technology, 21st Century-COE "Nano-Factory", Meijo University (2005 from CiNii)

    Articles in CiNii:1

    • Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer (2005)
  • KAMIYAMA Satoshi ID: 9000107347540

    Faculty of Science and Technology, High-Tech Research Center (2004 from CiNii)

    Articles in CiNii:1

    • 350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN (2004)
  • KAMIYAMA Satoshi ID: 9000107348606

    Faculty of Science and Technology, Meijo University (2003 from CiNii)

    Articles in CiNii:1

    • High-Power UV-Light-Emitting Diode on Sapphire (2003)
  • KAMIYAMA Satoshi ID: 9000107357416

    Fac. Sci. & Eng., Meijo University (2011 from CiNii)

    Articles in CiNii:1

    • Microstructural observation of AlGaN on ELO-AlN (2011)
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