Search Results1-20 of  24

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  • Kamohara Shiro ID: 9000025031001

    Articles in CiNii:1

    • Consideration of random dopant fluctuation models for accurate prediction of threshold voltage variation of metal-oxide-semiconductor field-effect transistors in 45nm technology and beyond (2009)
  • Kamohara Shiro ID: 9000025044689

    Articles in CiNii:1

    • Statistical p-n junction leakage model via trap level fluctuation for refresh-time-oriented dynamic random access memory design (2008)
  • KAMOHARA Shiro ID: 9000002165913

    Semiconductor & Integrated Circuits, Hitachi Ltd. (1999 from CiNii)

    Articles in CiNii:1

    • Anomalous Leakage Current Model for Retention Failure in Flash Memories (1999)
  • KAMOHARA Shiro ID: 9000003279005

    Department of Physics,Faculty of Science and Technology,Keio University (1987 from CiNii)

    Articles in CiNii:1

    • Long-Time Spin Relaxation in Zero-Field (1987)
  • KAMOHARA Shiro ID: 9000004781247

    Low-power Electronics Association & Project(LEAP) (2014 from CiNii)

    Articles in CiNii:30

    • Analysis of SRAM Neutron-Induced Errors Based on the Consideration of Both Charge-Collection and Parasitic-Bipolar Failure Modes (2005)
    • Evaluation of Silicon MOSFET Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies using a New Normalization Method (2008)
    • Characteristics Variation in Scaled MOSFETs (2008)
  • KAMOHARA Shiro ID: 9000016376890

    Robust Transistor Program, Nano Silicon Integration Project, Research Department 4, MIRAI-Selete (2010 from CiNii)

    Articles in CiNii:2

    • Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors (2009)
    • Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method (2010)
  • KAMOHARA Shiro ID: 9000018658053

    Renesas Electronics Corp. (2011 from CiNii)

    Articles in CiNii:1

    • A New Critical Area Simulation Algorithm and Its Application for Failing Bit Analysis (2011)
  • KAMOHARA Shiro ID: 9000021357207

    Renesas Technology Corp. (2007 from CiNii)

    Articles in CiNii:1

    • Development of Evaluation Method for Estimating Stress-Induced Change in Drain Current in Deep-sub-micron MOSFETs (2007)
  • KAMOHARA Shiro ID: 9000297482915

    Low-power Electronics Association & Project (LEAP) (2015 from CiNii)

    Articles in CiNii:1

    • A Perpetuum Mobile 32bit CPU on 65nm SOTB CMOS Technology with Reverse-Body-Bias Assisted Sleep Mode (2015)
  • Kamohara Shiro ID: 9000025059213

    Articles in CiNii:1

    • Deep-trap stress induced leakage current model for nominal and weak oxides (2008)
  • Kamohara Shiro ID: 9000254136234

    Department of Physics, Faculty of Science and Technology, Keio University (1987 from CiNii)

    Articles in CiNii:1

    • Long-Time Spin Relaxation in Zero-Field (1987)
  • Kamohara Shiro ID: 9000304970478

    Low-power Electronics Association & Project(LEAP) (2014 from CiNii)

    Articles in CiNii:1

    • A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14μA Sleep Current using Reverse-Body-Bias Assisted 65nm SOTB CMOS Technology (2014)
  • Kamohara Shiro ID: 9000304970721

    Low-power Electronics Association & Project(LEAP) (2014 from CiNii)

    Articles in CiNii:1

    • A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14μA Sleep Current using Reverse-Body-Bias Assisted 65nm SOTB CMOS Technology (2014)
  • Kamohara Shiro ID: 9000401565892

    Articles in CiNii:1

    • 2009-01-30 (2009)
  • Kamohara Shiro ID: 9000401569281

    Articles in CiNii:1

    • Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method (2010)
  • Kamohara Shiro ID: 9000401771821

    Articles in CiNii:1

    • 2008-07-11 (2008)
  • Kamohara Shiro ID: 9000401777962

    Articles in CiNii:1

    • 2009-04-20 (2009)
  • Kamohara Shiro ID: 9000401779948

    Articles in CiNii:1

    • 2009-06-22 (2009)
  • Kamohara Shiro ID: 9000401795751

    Articles in CiNii:1

    • High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method (2011)
  • Kamohara Shiro ID: 9000401856038

    Department of Physics, Faculty of Science and Technology, Keio University (1987 from CiNii)

    Articles in CiNii:1

    • Long-Time Spin Relaxation in Zero-Field (1987)
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