Search Results1-20 of  56

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  • Kanashima Takeshi ID: 9000024940682

    Articles in CiNii:1

    • Ferroelectric properties of Bi1.1Fe1-xCo[x]O3 thin films prepared by chemical solution deposition using iterative rapid thermal annealing in N2 and O2 (Special issue: Ferroelectric materials and their applications) (2010)
  • Kanashima Takeshi ID: 9000024979862

    Articles in CiNii:1

    • Improvement in the property of field effect transistor having the HfO2/Ge structure fabricated by photoassisted metal organic chemical vapor deposition with fluorine treatment (Special issue: Solid state devices and materials) (2011)
  • Kanashima Takeshi ID: 9000025016974

    Articles in CiNii:1

    • Fabrication and characterization of ferroelectric poly(vinylidene fluoride-tetrafluoroethylene) gate field-effect transistor memories (Special issue: Solid state devices and materials) (2010)
  • Kanashima Takeshi ID: 9000025070069

    Articles in CiNii:1

    • Organic Ferroelectric Field-Effect Transistor Memory Using Flat Poly(vinylidene fluoride-tetrafluoroethylene) and Pentacene Thin Films (Special Issue : Solid State Devices and Materials (1)) (2012)
  • Kanashima Takeshi ID: 9000025119586

    Articles in CiNii:1

    • Fabrication and Characterization of Ferroelectric Gate Field-Effect Transistor Memory Based on Ferroelectric-Insulator Interface Conduction (2006)
  • KANASHIMA Takeshi ID: 9000002336153

    Articles in CiNii:89

    • Theoretical Analysis of Oxygen-Excess Defects in SiO_2 Thin Film by Molecular Orbital Method (1996)
    • Characterization of Charged Traps near Si-SiO_2 Interface in Photo-Induced Chemical Vapor Deposited SiO_2 Film (1996)
    • SiO_2 Etching and Formation fo Si Oxide and Nitride Induced by Sofx X-ray from SPring-8 Undulator (2000)
  • KANASHIMA Takeshi ID: 9000107334385

    Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University (2001 from CiNii)

    Articles in CiNii:1

    • Nondestructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance (2001)
  • KANASHIMA Takeshi ID: 9000107334815

    Department of Physical Science, Graduate School of Engineering Science, Osaka University (2001 from CiNii)

    Articles in CiNii:1

    • Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator (2001)
  • KANASHIMA Takeshi ID: 9000107343476

    Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • Contactless Characterization of Fixed Charges in HfO_2 Thin Film from Photoreflectance (2005)
  • KANASHIMA Takeshi ID: 9000107362294

    Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University (2001 from CiNii)

    Articles in CiNii:1

    • Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature (2001)
  • KANASHIMA Takeshi ID: 9000107375742

    Articles in CiNii:1

    • Molecular Orbital Analysis of Stability of Ge(100) Surface Terminated by Various Atoms (2010)
  • KANASHIMA Takeshi ID: 9000107376837

    Department of Physical Science, Graduate School of Engineering Science, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene (2003)
  • Kanashima Takeshi ID: 9000024940822

    Articles in CiNii:1

    • Leakage current reduction and ferroelectric property of BiFe1-xCo[x]O3 thin films prepared by chemical solution deposition using iterative rapid thermal annealing al approximately (2010)
  • Kanashima Takeshi ID: 9000025077064

    Articles in CiNii:1

    • Passivation of Ge(100) and (111) Surfaces by Termination of Nonmetal Elements (Special Issue : Solid State Devices and Materials (2)) (2012)
  • Kanashima Takeshi ID: 9000066715310

    Articles in CiNii:1

    • Microwave Tunable Devices Composed of Coplanar Waveguide Line with (Ba0.6,Sr0.4)TiO3/Au/Cr/(Ba0.6,Sr0.4)TiO3Sandwich Structure (2008)
  • Kanashima Takeshi ID: 9000283186325

    Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Preparation and Characterization of High-.KAPPA. Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition. (2003)
  • Kanashima Takeshi ID: 9000392735407

    Articles in CiNii:1

    • Photoluminescence and Its Excimer Laser Irradiation Effects in SiO<SUB>2</SUB> Film Prepared by Photo-Induced Chemical Vapor Deposition (1993)
  • Kanashima Takeshi ID: 9000401634610

    Articles in CiNii:1

    • Photoluminescence and Its Excimer Laser Irradiation Effects in SiO2Film Prepared by Photo-Induced Chemical Vapor Deposition (1993)
  • Kanashima Takeshi ID: 9000401655451

    Articles in CiNii:1

    • Theoretical Analysis of Oxygen-Excess Defects inSiO2Thin Film by Molecular Orbital Method (1996)
  • Kanashima Takeshi ID: 9000401655584

    Articles in CiNii:1

    • 1996-02-28 (1996)
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