Search Results1-20 of  27

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  • KANAYA Masatoshi ID: 9000001219975

    Ion Engineering Research Institute (2003 from CiNii)

    Articles in CiNii:1

    • New Approach to Lowering of the Overvoltage for Oxygen Evolution on RuO_2 and Related Metal-Oxide Electrodes by Ion Implantation (2003)
  • KANAYA Masatoshi ID: 9000004972791

    Nippon Steel Corporation, Advanced Technology Research Laboratories (1998 from CiNii)

    Articles in CiNii:3

    • Bulk single-crystal growth of wide-band-gap semiconductor silicon carbide. (1995)
    • Development of Single-Crystalline SiC Boule Fabrication Technology as Substrate Material for Electronic Devices (1997)
    • Development of Large Single Crystal SiC Substrates (1998)
  • KANAYA Masatoshi ID: 9000005532610

    Dept. of Electrical Engineering, Tohoku University (1980 from CiNii)

    Articles in CiNii:2

    • Magnetic Annealing Effect for Co-Zr Alloys with Er (1980)
    • Magnetic Annealing Effect for Dilute Co-Zr Alloys (1980)
  • KANAYA Masatoshi ID: 9000005569201

    Ion Engineering Research Institute Corporation (2002 from CiNii)

    Articles in CiNii:6

    • Influence of the Seed Face Polarity on the Sublimation Growth of α-SiC (1995)
    • Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC (1996)
    • Mechanism of Molten KOH Etching of SiC Single Crystals:Comparative Study with Thermal Oxidation (1999)
  • KANAYA Masatoshi ID: 9000021768519

    Faculty of Agriculture, Kagawa University (1976 from CiNii)

    Articles in CiNii:1

    • Studies on the Flesh Quality of Fruit and Vegetables:II. Relation between the Pulp Quality and Properties of Pectic Substances during Post-harvest Ripening of Peaches (1976)
  • KANAYA Masatoshi ID: 9000107334190

    Advanced Technology Research Laboratories, Nippon Steel Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Nitrogen Incorporation Mechanism and Dependence of Site-Competition Epitaxy on the Total Gas Flow Rate for 6H-SiC Epitaxial Layers Grown by Chemical Vapor Deposition (2001)
  • KANAYA Masatoshi ID: 9000253326311

    Electronics Research Laboratories, Technical Development Bureau, Nippon Steel Corporation (1995 from CiNii)

    Articles in CiNii:1

    • Bulk single-crystal growth of wide-band-gap semiconductor silicon carbide (1995)
  • Kanaya Masatoshi ID: 9000252944309

    Dept. of Electrical Engineering, Tohoku University (1977 from CiNii)

    Articles in CiNii:1

    • Magnetic Annealing Effect for Dilute Cobalt-Rare Earth Alloys (1977)
  • Kanaya Masatoshi ID: 9000252946866

    Dept. of Electrical Engineering, Tohoku University (1980 from CiNii)

    Articles in CiNii:1

    • Magnetic annealing effect for dilute Co-Zr alloys. (1980)
  • Kanaya Masatoshi ID: 9000252946883

    Dept. of Electrical Engineering, Tohoku University (1980 from CiNii)

    Articles in CiNii:1

    • Magnetic annealing effect for dilute Co-Zr alloys. (1980)
  • Kanaya Masatoshi ID: 9000252958544

    Department of Electronics, Faculty of Engineering, Technological University of Nagaoka (1986 from CiNii)

    Articles in CiNii:1

    • The Growth of Single Crystal of 3C–SiC on the Si Substrate by the MBE Method Using Multi Electron Beam Heating (1986)
  • Kanaya Masatoshi ID: 9000256022703

    Ion Engineering Research Institute (2003 from CiNii)

    Articles in CiNii:1

    • New Approach to Lowering of the Overvoltage for Oxygen Evolution on RuO2 and Related Metal-Oxide Electrodes by Ion Implantation (2003)
  • Kanaya Masatoshi ID: 9000256659114

    Nippon Steel Corporation (1997 from CiNii)

    Articles in CiNii:1

    • Development of Single-Crystalline SiC Boule Fabrication Technology as Substrate Material for Electronic Devices. (1997)
  • Kanaya Masatoshi ID: 9000258129586

    Advanced Technology Research Laboratories, Nippon Steel Corporation, 5–10–1 Fuchinobe, Sagamihara, Kanagawa 229, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Influence of the Seed Face Polarity on the Sublimation Growth of .ALPHA.-SiC. (1995)
  • Kanaya Masatoshi ID: 9000258148349

    Advanced Technology Research Laboratories, Nippon Steel Corporation, 20–1 Shintomi, Futtsu, Chiba 293–8511, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Mechanism of Molten KOH Etching of SiC Single Crystals. Comparative Study with Thermal Oxidation. (1999)
  • Kanaya Masatoshi ID: 9000392680470

    Articles in CiNii:1

    • Magnetic Annealing Effect for Dilute Cobalt-Rare Earth Alloys (1977)
  • Kanaya Masatoshi ID: 9000392712527

    Articles in CiNii:1

    • The Growth of Single Crystal of 3C–SiC on the Si Substrate by the MBE Method Using Multi Electron Beam Heating (1986)
  • Kanaya Masatoshi ID: 9000401581886

    Articles in CiNii:1

    • Magnetic Annealing Effect for Dilute Cobalt-Rare Earth Alloys (1977)
  • Kanaya Masatoshi ID: 9000401586149

    Articles in CiNii:1

    • Magnetic Annealing Effect for Co-Zr Alloys with Er (1980)
  • Kanaya Masatoshi ID: 9000401586164

    Articles in CiNii:1

    • Magnetic Annealing Effect for Dilute Co-Zr Alloys (1980)
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