Search Results1-20 of  100

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  • Kasu Makoto ID: 9000018880436

    Articles in CiNii:1

    • Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials) (2012)
  • Kasu Makoto ID: 9000025016453

    Articles in CiNii:1

    • Hexagonal AlN(0001) heteroepitaxial growth on cubic diamond(001) (Special issue: Solid state devices and materials) (2010)
  • Kasu Makoto ID: 9000025017292

    Articles in CiNii:1

    • High temperature operation of boron-implanted diamond field-effect transistors (Special issue: Solid state devices and materials) (2010)
  • Kasu Makoto ID: 9000025069899

    Articles in CiNii:1

    • Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency : A First-Principles Study of AlN/GaN Superlattice (Special Issue : Solid State Devices and Materials (1)) (2012)
  • Kasu Makoto ID: 9000025096144

    Articles in CiNii:1

    • RF Performance of Diamond Metel-Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit (Special Issue: Solid State Devices & Materials) (2006)
  • Kasu Makoto ID: 9000241800788

    Articles in CiNii:1

    • Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganic Vapor Phase Epitaxy (2013)
  • KASU Makoto ID: 9000002166998

    NTT Basic Research Laboratories, NTT Corporation (2005 from CiNii)

    Articles in CiNii:3

    • Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates (2004)
    • Low-dislocation AlGaN thin films grown using Al_<1-x>Si_xN nano-disks (x=0.07-0.17) (2004)
    • Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors (2005)
  • KASU Makoto ID: 9000004777605

    Green Electronics Laboratories, Graduate School of Engineering, Saga University:NTT Basic Research Laboratories, NTT Corporation (2013 from CiNii)

    Articles in CiNii:35

    • Nanoscale Selective-Area GaAs Growth by Nitrogen Surface Passivation and STM Surface Modification (1996)
    • Fabrication of Quantum-Wire Structure Using Step-Flow MOVPE (1995)
    • Nanometer-scale GaAs Selective Growth Using STM Lithography (1998)
  • KASU Makoto ID: 9000005554229

    NTT Basic Research Laboratories, NTT Corporation (2001 from CiNii)

    Articles in CiNii:4

    • In-Situ STM Observation of GaAs Surfaces after Nitridation (1996)
    • In-Situ STM Observation of GaAs Surfaces after Nitridation (1997)
    • Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy (1997)
  • KASU Makoto ID: 9000016378836

    NTT Basic Research Laboratories, NTT Corporation (2012 from CiNii)

    Articles in CiNii:4

    • Improvement of Hydrogen-Terminated Diamond Field Effect Transistors in Nitrogen Dioxide Atmosphere (2009)
    • Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy (2009)
    • Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy (2010)
  • KASU Makoto ID: 9000017683517

    NTT Basic Research Laboratories, NTT Corporation (2008 from CiNii)

    Articles in CiNii:1

    • RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination (2008)
  • KASU Makoto ID: 9000107341201

    NTT Basic Research Laboratories, NTT Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor (2004)
  • KASU Makoto ID: 9000107343400

    NTT Basic Research Laboratories, NTT Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates (2005)
  • KASU Makoto ID: 9000252915702

    NTT Basic Research Laboratories (1995 from CiNii)

    Articles in CiNii:1

    • Fabrication of Quantum-Wire Structure Using Step-Flow MOVPE. (1995)
  • KASU Makoto ID: 9000253327858

    NTT Basic Research Laboratories (2001 from CiNii)

    Articles in CiNii:1

    • Optical and electron devices using nitride semiconductors (2001)
  • KASU Makoto ID: 9000253649319

    NTT Basic Research Laboratories (1998 from CiNii)

    Articles in CiNii:1

    • Nanoscale Semiconductor Processes Using STM and AFM Lithographies. Nanometer-scale GaAs Selective Growth Using STM Lithography. (1998)
  • KASU Makoto ID: 9000257982401

    NTT Basic Research Laboratories, NTT Corporation (2002 from CiNii)

    Articles in CiNii:1

    • Recent Developments of Field-Emission Research. High Field-emission Current Density from Heavily Si-doped Aluminum Nitrides. (2002)
  • KASU Makoto ID: 9000257983526

    NTT Basic Research Laboratories, NTT Corporation (2008 from CiNii)

    Articles in CiNii:1

    • Gate Metal Interface on Hydrogen-terminated Diamond FETs (2008)
  • KASU Makoto ID: 9000257984048

    Green Electronics Laboratories, Saga University|Graduate School of Electrical and Electronic Engineering, Saga University (2012 from CiNii)

    Articles in CiNii:1

    • Hole Carrier Doping on NO<sub>2</sub> and O<sub>3</sub> Adsorption on H-terminated Diamond Surface (2012)
  • KASU Makoto ID: 9000265567111

    Saga University Graduate School of Engineering (2013 from CiNii)

    Articles in CiNii:1

    • X-ray Topography Evaluation of Single-Crystal Diamond, Comparison of Microwave Plasma CVD Growth and High-Pressure High-Temperature Composition (2013)
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