Search Results1-5 of  5

  • KATAKAMI Akira ID: 9000107388921

    Hiroshima University, Research Center for Nanodevices and Systems (2004 from CiNii)

    Articles in CiNii:1

    • A High-Aspect-Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation (2004)
  • Katakami Akira ID: 9000002188690

    School of Economics, University of Osaka Prefecture (1966 from CiNii)

    Articles in CiNii:1

    • TYPES OF JOINT-CONSULTATION AND THEIR RELATIONS TO COLLECTIVE BARGAINING IN THE INDUSTRIAL RELATIONS IN JAPAN (1966)
  • Katakami Akira ID: 9000018784104

    Articles in CiNii:1

    • Dedication to Professor Junichi Okuda (1989)
  • Katakami Akira ID: 9000025064247

    Articles in CiNii:1

    • Hole mobility enhancement caused by gate-induced vertical strain in gate-first full-metal high-k p-channel field effect transistors using ion-beam W (2009)
  • Katakami Akira ID: 9000280546614

    Fujitsu Semiconductor Ltd. (2014 from CiNii)

    Articles in CiNii:1

    • C-12-35 Research on Ultra Low-Voltage SRAM using Body Bias Controlled Access Transistors (2014)
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