Search Results1-19 of  19

  • KATASE Takayoshi ID: 9000025008919

    Articles in CiNii:1

    • Thin Film Growth and Device Fabrication of Iron-Based Superconductors (Recent Developments in Superconductivity) (2012)
  • KATASE Takayoshi ID: 9000016651933

    Materials and Structures Laboratory, Tokyo Institute of Technology (2009 from CiNii)

    Articles in CiNii:1

    • Fabrication of Flat MgO(111) Films on Al_2O_3(0001) Substrates by Pulsed Laser Deposition (2009)
  • KATASE Takayoshi ID: 9000290134495

    Research Institute for Electronic Science, Hokkaido University (2015 from CiNii)

    Articles in CiNii:1

    • Characterization of electronic structure around metal–insulator transition in V<sub>1−</sub><i><sub>x</sub></i>W<i><sub>x</sub></i>O<sub>2</sub> thin films by thermopower measurement (2015)
  • KATASE Takayoshi ID: 9000362200166

    Laboratory for Materials and Structures, Tokyo Institute of Technology|Research Institute for Electronic Science, Hokkaido University|PRESTO, Japan Science and Technology Agency (2017 from CiNii)

    Articles in CiNii:1

    • Transition-metal-oxide based functional thin-film device using leakage-free electrolyte (2017)
  • KATASE Takayoshi ID: 9000405765239

    Articles in CiNii:1

    • Over barium solubility limits of thermoelectric (Ba<sub>x</sub>Sr<sub>1-x</sub>)Si<sub>2</sub> films prepared by sputtering method (2019)
  • Katase Takayoshi ID: 9000279888189

    Articles in CiNii:1

    • Thermopower analysis of the electronic structure around the metal-insulator transition in V1-xWxO2 (2014)
  • Katase Takayoshi ID: 9000303992647

    Articles in CiNii:1

    • Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion (2015)
  • Katase Takayoshi ID: 9000326266925

    Articles in CiNii:1

    • A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry (2016)
  • Katase Takayoshi ID: 9000326661561

    Articles in CiNii:1

    • Room-Temperature-Protonation-Driven On-Demand Metal-Insulator Conversion of a Transition Metal Oxide (2015)
  • Katase Takayoshi ID: 9000336757259

    Articles in CiNii:1

    • Solid-Phase Epitaxial Growth of A-Site-Ordered Perovskite Sr4-xErxCo4O12-delta: A Room Temperature Ferrimagnetic p-Type Semiconductor (2015)
  • Katase Takayoshi ID: 9000360556007

    Articles in CiNii:1

    • Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate (2017)
  • Katase Takayoshi ID: 9000391870287

    Tokyo Institute of Technology (2007 from CiNii)

    Articles in CiNii:1

    • Effects of Bi flux on the Film Growth of Homologous Series Oxide InGaO3(ZnO)m byFlux-Assisted Reactive Solid-Phase epitaxy. (2007)
  • Katase Takayoshi ID: 9000398389797

    Articles in CiNii:1

    • Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device (2017)
  • Katase Takayoshi ID: 9000401565336

    Articles in CiNii:1

    • Superconductivity in Epitaxial Thin Films of Co-Doped SrFe2As2with Bilayered FeAs Structures and their Magnetic Anisotropy (2008)
  • Katase Takayoshi ID: 9000401568253

    Articles in CiNii:1

    • High Critical Current Density 4 MA/cm2in Co-Doped BaFe2As2Epitaxial Films Grown on (La,Sr)(Al,Ta)O3Substrates without Buffer Layers (2010)
  • Katase Takayoshi ID: 9000401910721

    Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan (2012 from CiNii)

    Articles in CiNii:1

    • Thin Film Growth and Device Fabrication of Iron-Based Superconductors (2012)
  • Katase Takayoshi ID: 9000401965110

    Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan (2013 from CiNii)

    Articles in CiNii:1

    • Ultralow-Dissipative Conductivity by Dirac Fermions in BaFe2As2 (2013)
  • Katase Takayoshi ID: 9000401978385

    Articles in CiNii:1

    • Oxide-based optical, electrical and magnetic properties switching devices with water-incorporated gate insulator (2019)
  • Katase Takayoshi ID: 9000401994101

    Articles in CiNii:1

    • 2016-10-28 (2016)
Page Top