Search Results1-20 of  27

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  • KATAYAMA Takuma ID: 9000006915545

    Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation (2008 from CiNii)

    Articles in CiNii:4

    • Depth profiles of strain in AlGaN/GaN heterostructures grown on Si by electron backscatter diffraction technique (2008)
    • Depth profiles of strain in AlGaN/GaN heterostructures grown on Si by electron backscatter diffraction technique (2008)
    • C-10-1 Depth Profiles of Strain in AlGaN/GaN Heterostructures Grown on Si by Electron Backscatter Diffraction Technique (2008)
  • KATAYAMA Takuma ID: 9000006924709

    Articles in CiNii:4

    • A Virtual Aquarium Based on EELF with Subjective Competition for Keeping Workers' Motivation (2009)
    • Practical evaluation of entertainment system with subjective competition for improving workers' motivation (2008)
    • Phantom Dialogs : Confirmation method by selecting from multiple dialog windows (2009)
  • KATAYAMA Takuma ID: 9000304305478

    Graduate School of Sci. and Eng., Yamaguchi Univ. (2014 from CiNii)

    Articles in CiNii:1

    • 0816 Turbulent Vorticity Diffusion in the Stronger Wall Jet Managed by a Flat Plate Wing in the Outer Layer (2014)
  • Katayama Takuma ID: 9000006335910

    Department of Applied Chemistry, Faculty of Science, Tokyo University of Science (2011 from CiNii)

    Articles in CiNii:3

    • Thermodynamic and Kinetic Effects of Morpholino Modification on Pyrimidine Motif Triplex Nucleic Acid Formation under Physiological Condition (2009)
    • 2P177 Rational combination of stabilizing strategies to achieve synergistic stabilization of nucleic acid assembly(36. DNA to chromatin,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006) (2006)
    • 3B1446 Mechanism of the interaction between triplex DNA and triplex DNA-binding protein Stm1(3B Nucleic acid binding proteins,The 49th Annual Meeting of the Biophysical Society of Japan) (2011)
  • Katayama Takuma ID: 9000021440122

    Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. (2007 from CiNii)

    Articles in CiNii:1

    • Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique (2007)
  • Katayama Takuma ID: 9000252977897

    Department of Electronics, Faculty of Engineering, Kyoto University (1991 from CiNii)

    Articles in CiNii:1

    • Growth and Properties of PbTiO<SUB>3</SUB> Thin Films by Photoenhanced Chemical Vapor Deposition (1991)
  • Katayama Takuma ID: 9000252982385

    Department of Electronics, Faculty of Engineering, Kyoto University (1992 from CiNii)

    Articles in CiNii:1

    • Effects of the Reaction Pressure on the Growth of PbTiO<SUB>3</SUB> Thin Films by the Photo-Chemical Vapor Deposition Method (1992)
  • Katayama Takuma ID: 9000252982435

    Department of Electronics, Faculty of Engineering, Kyoto University (1992 from CiNii)

    Articles in CiNii:1

    • Growth of Pb(Zr, Ti)O<SUB>3</SUB> Thin Films by Photoenhanced Chemical Vapor Deposition and Their Properties (1992)
  • Katayama Takuma ID: 9000252984787

    Department of Electronics, Faculty of Engineering, Kyoto University (1993 from CiNii)

    Articles in CiNii:1

    • Effects of Growth Rate on Properties of Pb(Zr, Ti)O<SUB>3</SUB> Thin Films Grown by Chemical Vapor Deposition (1993)
  • Katayama Takuma ID: 9000252987736

    Department of Electronics, Faculty of Engineering, Kyoto University (1993 from CiNii)

    Articles in CiNii:1

    • Switching Kinetics of Pb(Zr, Ti)O<SUB>3</SUB> Thin Films Grown by Chemical Vapor Deposition (1993)
  • Katayama Takuma ID: 9000252987825

    Department of Electronics, Faculty of Engineering, Kyoto University (1993 from CiNii)

    Articles in CiNii:1

    • Thin Film Growth of Pb(Zr, Ti)O<SUB>3</SUB> by Photoenhanced Metalorganic Chemical Vapor Deposition Using NO<SUB>2</SUB> (1993)
  • Katayama Takuma ID: 9000284629941

    Panasonic Corporation (2013 from CiNii)

    Articles in CiNii:2

    • High-Power Operation and Applications of InGaN Laser Diode (2013)
    • High-Power Operation and Applications of InGaN Laser Diode (2013)
  • Katayama Takuma ID: 9000285079501

    Panasonic Corporation (2013 from CiNii)

    Articles in CiNii:1

    • High-Power Operation and Applications of InGaN Laser Diode (2013)
  • Katayama Takuma ID: 9000386228956

    Sensing Solution Development Center, Engineering Division, Automotive & Industrial Systems Company, Panasonic Corporation (2018 from CiNii)

    Articles in CiNii:1

    • High-power Blue-violet InGaN Laser Diodes for White Spot Lighting Systems (2018)
  • Katayama Takuma ID: 9000392717267

    Articles in CiNii:1

    • Growth of Pb(Zr, Ti)O<SUB>3</SUB> Thin Films by Photoenhanced Chemical Vapor Deposition and Their Properties (1992)
  • Katayama Takuma ID: 9000392717284

    Articles in CiNii:1

    • Effects of the Reaction Pressure on the Growth of PbTiO<SUB>3</SUB> Thin Films by the Photo-Chemical Vapor Deposition Method (1992)
  • Katayama Takuma ID: 9000392719753

    Articles in CiNii:1

    • Effects of Growth Rate on Properties of Pb(Zr, Ti)O<SUB>3</SUB> Thin Films Grown by Chemical Vapor Deposition (1993)
  • Katayama Takuma ID: 9000392724132

    Articles in CiNii:1

    • Growth and Properties of PbTiO<SUB>3</SUB> Thin Films by Photoenhanced Chemical Vapor Deposition (1991)
  • Katayama Takuma ID: 9000392735720

    Articles in CiNii:1

    • Thin Film Growth of Pb(Zr, Ti)O<SUB>3</SUB> by Photoenhanced Metalorganic Chemical Vapor Deposition Using NO<SUB>2</SUB> (1993)
  • Katayama Takuma ID: 9000392736883

    Articles in CiNii:1

    • Switching Kinetics of Pb(Zr, Ti)O<SUB>3</SUB> Thin Films Grown by Chemical Vapor Deposition (1993)
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