Search Results1-20 of  25

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  • Katsuyama Tsukuru ID: 9000024990400

    Articles in CiNii:1

    • 1.3μm GaInNAs Bandgap Difference Confinement Semiconductor Optical Amplifiers (2006)
  • Katsuyama Tsukuru ID: 9000356894088

    Articles in CiNii:1

    • Highly-Sensitive Near-Infrared Spectroscopy System for Remote Monitoring of Concrete Structures (Special Issue on Infrastructure Maintenance, Renovation and Management) (2017)
  • KATSUYAMA Tsukuru ID: 9000002111596

    Articles in CiNii:3

    • Optoelectronics and Optical Devices (2008)
    • Development of semiconductor lasers for optical communication (2009)
    • Development of Various Semiconductor Quantum Devices (2012)
  • KATSUYAMA Tsukuru ID: 9000004756541

    Articles in CiNii:46

    • Mid-IR vertical transition DFB quantum cascade laser (2012)
    • Mid-IR vertical transition DFB quantum cascade laser (2012)
    • Mid-IR vertical transition DFB quantum cascade laser (2012)
  • KATSUYAMA Tsukuru ID: 9000005569367

    Optoelectronics R&D Laboratories. Sumitomo Electric Industries, Ltd (2002 from CiNii)

    Articles in CiNii:2

    • Closely Spased Independently Addressable Dual-Beam Visible Lasers with Strained GaInP Quantum Wells (1995)
    • Low-Damage Indium Phosphide Sidewall Formation by Reactive Ion Etching (2002)
  • KATSUYAMA Tsukuru ID: 9000005744208

    Optoelectronics R&D Laboratories, Sumitomo Electric Industries, Ltd. (1999 from CiNii)

    Articles in CiNii:1

    • Metalorganic Vapor Phase Epitaxial Growth of GaNAs Using Tertiarybutylarsine(TBA) and Dimethylhydrazine(DMHy) (1999)
  • KATSUYAMA Tsukuru ID: 9000005899945

    Optoelectronics R&D Laboratories, Sumitomo Electric Industries Ltd. (2000 from CiNii)

    Articles in CiNii:1

    • Surface Treatment by Ar Plasma Irradiation in Electron Cyclotron Resonance Chemical Vapor Deposition (2000)
  • KATSUYAMA Tsukuru ID: 9000018185982

    Sumitomo Electric Industries, Ltd. (2010 from CiNii)

    Articles in CiNii:1

    • Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates (2010)
  • KATSUYAMA Tsukuru ID: 9000107314391

    Optoelectronic Industry and Technology Development Association (OITDA) (2004 from CiNii)

    Articles in CiNii:1

    • 1.3μm Traveling-Wave GaInNAs Semiconductor Optical Amplifier (2004)
  • KATSUYAMA Tsukuru ID: 9000240238281

    Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works (2012 from CiNii)

    Articles in CiNii:1

    • Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes (2012)
  • KATSUYAMA Tsukuru ID: 9000240238757

    Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works (2012 from CiNii)

    Articles in CiNii:1

    • Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes (2012)
  • KATSUYAMA Tsukuru ID: 9000240239542

    Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works (2012 from CiNii)

    Articles in CiNii:1

    • Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes (2012)
  • KATSUYAMA Tsukuru ID: 9000240239572

    Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works (2012 from CiNii)

    Articles in CiNii:1

    • Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes (2012)
  • KATSUYAMA Tsukuru ID: 9000240239826

    Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works (2012 from CiNii)

    Articles in CiNii:1

    • Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes (2012)
  • Katsuyama Tsukuru ID: 9000047627929

    Articles in CiNii:1

    • Electroabsorption Effect of GaInNAs in Waveguiding Structure (2009)
  • Katsuyama Tsukuru ID: 9000258129615

    Optoelectronics Laboratories, Sumitomo Electric Industries, Ltd., Taya–cho 1, Sakae–ku, Yokohama 244, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Closely Spaced Independently Addressable Dual-Beam Visible Lasers with Strained GaInP Quantum Wells. (1995)
  • Katsuyama Tsukuru ID: 9000258145973

    Optoelectronics R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya–cho, Sakae–ku, Yokohama 244–8588, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Metalorganic Vapor Phase Epitaxial Growth of GaNAs Using Tertiarybutylarsine (TBA) and Dimethylhydrazine (DMHy). (1999)
  • Katsuyama Tsukuru ID: 9000258173164

    Optoelectronic Industry and Technology Development Association (OITDA)|Transmission Device R&D Laboratories, Sumitomo Electric Industries, LTD. (2004 from CiNii)

    Articles in CiNii:1

    • 1.3.MU.m Traveling-Wave GaInNAs Semiconductor Optical Amplifier (2004)
  • Katsuyama Tsukuru ID: 9000401568105

    Articles in CiNii:1

    • Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates (2010)
  • Katsuyama Tsukuru ID: 9000401650736

    Articles in CiNii:1

    • Closely Spaced Independently Addressable Dual-Beam Visible Lasers with Strained GaInP Quantum Wells (1995)
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