Search Results1-20 of  25

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  • Kawaharazuka Atsushi ID: 9000018882111

    Articles in CiNii:1

    • Growth of CuGaSe₂ Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy (2011)
  • Kawaharazuka Atsushi ID: 9000241878046

    Articles in CiNii:1

    • High-Absorption-Efficiency Superlattice Solar Cells by Excitons (2013)
  • KAWAHARAZUKA Atsushi ID: 9000001716578

    School of Science and Engineering, Waseda University (1997 from CiNii)

    Articles in CiNii:1

    • Electric Field Induced Recombination Centers in GaAs (1997)
  • KAWAHARAZUKA Atsushi ID: 9000005589598

    Department of Electrical, Electronics and Computer Engineering. School of Science and Engineering, Waseda University:Kagami Memorial Laboratory for Material Science and Technologies, Waseda University (2002 from CiNii)

    Articles in CiNii:2

    • Electric Field Induced Recombination Centers in GaAs (1998)
    • Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs (2002)
  • KAWAHARAZUKA Atsushi ID: 9000107327800

    Paul-Drude-Institut fur Festkorperelektronik (2003 from CiNii)

    Articles in CiNii:1

    • Spin-Polarized Electron Injection through an Fe/InAs Junction (2003)
  • KAWAHARAZUKA Atsushi ID: 9000107353824

    Paul Drude Institute (2004 from CiNii)

    Articles in CiNii:1

    • Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs (2004)
  • Kawaharazuka Atsushi ID: 9000023691923

    Articles in CiNii:1

    • Characteristics of multivalent impurity doped C60 films grown by MBE (2007)
  • Kawaharazuka Atsushi ID: 9000023706760

    Articles in CiNii:1

    • RHEED intensity oscillations of C60 growth on GaAs substrates (2008)
  • Kawaharazuka Atsushi ID: 9000023754046

    Articles in CiNii:1

    • RHEED intensity oscillation of C60 layer epitaxial growth (2009)
  • Kawaharazuka Atsushi ID: 9000023782423

    Articles in CiNii:1

    • Investigation of C60 epitaxial growth mechanism on GaAS substrates (2009)
  • Kawaharazuka Atsushi ID: 9000025080648

    Articles in CiNii:1

    • Effect of excitons in AlGaAs/GaAs superlattice solar cells (2011)
  • Kawaharazuka Atsushi ID: 9000025091592

    Articles in CiNii:1

    • Magnetic properties of multiply Mn δ-doped GaAs (2009)
  • Kawaharazuka Atsushi ID: 9000258140913

    School of Science and Engineering, Waseda University, 3–4–1 Okubo, Shinjuku–ku, Tokyo 169–0072, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Electric Field Induced Recombination Centers in GaAs. (1998)
  • Kawaharazuka Atsushi ID: 9000258173839

    Paul Drude Institute (2004 from CiNii)

    Articles in CiNii:1

    • Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs (2004)
  • Kawaharazuka Atsushi ID: 9000258701575

    Waseda Univ. (2006 from CiNii)

    Articles in CiNii:1

    • Catalytic effect of metal Ga during the growth of GaN by NH<SUB>3</SUB>-MBE (2006)
  • Kawaharazuka Atsushi ID: 9000258703561

    Waseda Univ. (2008 from CiNii)

    Articles in CiNii:1

    • Effect of surface orientation to water photolysis on GaN electrode. (2008)
  • Kawaharazuka Atsushi ID: 9000401671130

    Articles in CiNii:1

    • Electric Field Induced Recombination Centers in GaAs (1998)
  • Kawaharazuka Atsushi ID: 9000401709324

    Articles in CiNii:1

    • Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs (2002)
  • Kawaharazuka Atsushi ID: 9000401723550

    Articles in CiNii:1

    • Spin-Polarized Electron Injection through an Fe/InAs Junction (2003)
  • Kawaharazuka Atsushi ID: 9000401733876

    Articles in CiNii:1

    • Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs (2004)
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