Search Results1-20 of  63

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  • Kitada Takahiro ID: 9000024980545

    Articles in CiNii:1

    • Optical Kerr signals markedly enhanced by increasing quality factor in a GaAs/AlAs multilayer cavity (Special issue: Solid state devices and materials) (2011)
  • Kitada Takahiro ID: 9000025045452

    Articles in CiNii:1

    • Optical anisotropy of (11n)-oriented in GaAs strained quantum wells with finite barrier potential calculated with mixing effects of the spin-orbit split-off band (2008)
  • KITADA Takahiro ID: 9000001987555

    Toyohashi University of Technology (2007 from CiNii)

    Articles in CiNii:1

    • Development of Magneto-Optic Spatial Light Modulator and Application for Holographic Memory (2007)
  • KITADA Takahiro ID: 9000002304150

    神戸大学大学院生自然科学研究科 (2001 from CiNii)

    Articles in CiNii:2

    • DEVELOPMENT OF SIMPLIFIED METHOD EVALUATING LOCAL VULNERABILITY TO SEISMIC DISASTER BASED ON QUALIFICATION THEORY (2001)
    • Damage Ratio of Water Distributing Pipes Related with Their Burial Direction in Hyogo-ken Nanbu-Earthquake (Special Issue on the 1995 Hanshin-Awaji Great Earthquake) (1998)
  • KITADA Takahiro ID: 9000003727074

    村田機械(株) (1989 from CiNii)

    Articles in CiNii:1

    • Residual Stress of Case-Hardened Splined Shaft with Straight-Sided Teeth (1989)
  • KITADA Takahiro ID: 9000003822797

    Murata-Machinary Ltd. (1991 from CiNii)

    Articles in CiNii:1

    • Residual Stress of Case-Hafdened Splined Shaft with Straight-Sided Teeth (1991)
  • KITADA Takahiro ID: 9000005552925

    Osaka University (2006 from CiNii)

    Articles in CiNii:7

    • Extremely Flat Interfaces in In_xGa_<1-x>As/Al_<0.3>Ga_<0.7>As Quantum Wells Grown on (411)A GaAs Substrates by MBE (1996)
    • Effect of flatness of heterointerfaces on device performance of InP-based HEMTs (2006)
    • Super-Flat Interfaces in Pseudomorphic In_xGa_<1-x>As/Al_<0.28>Ga_<0.72>As Quantum Wells with High In Content (x = 0.15) Grown on (411) A GaAs Substrates by Molecular Beam Epitaxy (1998)
  • KITADA Takahiro ID: 9000016375403

    Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima (2011 from CiNii)

    Articles in CiNii:4

    • A GaAs/AlAs Multilayer Cavity with Self-Assembled InAs Quantum Dots Embedded in Strain-Relaxed Barriers for Ultrafast All-Optical Switching Applications (2008)
    • Enhanced Optical Kerr Signal of GaAs/AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed Barriers (2009)
    • Optical Anisotropy of Strongly Enhanced Sum Frequency Generation in (113)B GaAs/AlAs Coupled Multilayer Cavity (2010)
  • KITADA Takahiro ID: 9000107354488

    Institute of Technology and Science, University of Tokushima (2007 from CiNii)

    Articles in CiNii:1

    • 830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy (2007)
  • KITADA Takahiro ID: 9000254272298

    Articles in CiNii:1

    • Residual stress of case-hardened splined shaft with straight-sided teeth. (1991)
  • KITADA Takahiro ID: 9000256257950

    Articles in CiNii:1

    • Residual stress of case-hardened splined shaft with straight-sided teeth. (1989)
  • KITADA Takahiro ID: 9000345337019

    Graduate School of Science and Technology, Tokushima University (2017 from CiNii)

    Articles in CiNii:1

    • Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources (2017)
  • KITADA Takahiro ID: 9000404507586

    Graduate School of Engineering Science, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • New interfaces in heterostructures grown on high index planes of substrates by molecular beam epitaxy and their device applications (2003)
  • KITADA Takahiro ID: 9000404667988

    Graduate School of Technology, Industrial and Social Sciences, Tokushima University (2019 from CiNii)

    Articles in CiNii:1

    • Sublattice Reversal Epitaxy on High-Index Substrates for Novel Planar-Type Nonlinear Optical Devices (2019)
  • Kitada Takahiro ID: 9000024933734

    Articles in CiNii:1

    • Effects of heterointerface flatness on device performance of InP-based high electron mobility transistor (Special issue: Solid state devices and materials) (2007)
  • Kitada Takahiro ID: 9000024962985

    Articles in CiNii:1

    • Marked enhancement of optical Kerr signal in proportion to fourth power of quality factor of a GaAs/AlAs multilayer cavity (2009)
  • Kitada Takahiro ID: 9000058632116

    Articles in CiNii:1

    • Strong Sum Frequency Generation in a GaAs/AlAs Coupled Multilayer Cavity Grown on a (113)B-Oriented GaAs Substrate (2010)
  • Kitada Takahiro ID: 9000058668071

    Articles in CiNii:1

    • GaAs/AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed Barriers for Planar-Type Optical Kerr Gate Switches (2010)
  • Kitada Takahiro ID: 9000258136321

    Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Extremely Flat Interfaces in InxGa1-xAs/Al0.3Ga0.7As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy. (1997)
  • Kitada Takahiro ID: 9000258146782

    Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560–8531, Japan (1999 from CiNii)

    Articles in CiNii:1

    • High-Quality InGaAs Layers Grown on (411)A-Oriented InP Substrates by Molecular Beam Epitaxy. (1999)
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