Search Results1-12 of  12

  • KITADE Tetsuya ID: 9000002168498

    Research Center for Nanodevices and Systems, Hiroshima University (2004 from CiNii)

    Articles in CiNii:1

    • Room Temperature Operation of an Exclusive-OR Circuit Using a Highly-Doped Si Single-Electron Transistor (2004)
  • KITADE Tetsuya ID: 9000005905267

    Research Center for Nanodevices and Systems, Hiroshima University (2007 from CiNii)

    Articles in CiNii:7

    • Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands (2007)
    • Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands (2006)
    • Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor (2006)
  • KITADE Tetsuya ID: 9000107382415

    Research Center for Nanodevices and Systems, Hiroshima University (2004 from CiNii)

    Articles in CiNii:1

    • Application of Highly-Doped Si Single-Electron Transistors to an Exclusive-NOR Operation (2004)
  • KITADE Tetsuya ID: 9000254250153

    運輸省第三港湾建設局神戸調査設計事務所技術開発課 (1997 from CiNii)

    Articles in CiNii:1

    • V Block Method, The New Final Joint in Immersed Tunnels (1997)
  • KITADE Tetsuya ID: 9000258241637

    Kagoshima Port and Airport Development Office Kyushu Regional Development Bureau Ministry of Land, Infrastructure and Transport (2011 from CiNii)

    Articles in CiNii:1

    • A Model Experiment on Motions and Mooring Rope Tensions of a Moored Ship under Waves and Winds (2011)
  • KITADE Tetsuya ID: 9000258243054

    Ministry of Land, Infrastructure, Transport and Tourism (2012 from CiNii)

    Articles in CiNii:1

    • Field Observation of Groundwater Flow in Sandy Beach of Ibusuki Coast (2012)
  • Kitade Tetsuya ID: 9000025035320

    Articles in CiNii:1

    • Electrical characteristics of Si single-electron transistor based on multiple islands (Special issue: Microprocesses & nanotechnology) (2007)
  • Kitade Tetsuya ID: 9000258171662

    Research Center for Nanodevices and Systems, Hiroshima University (2004 from CiNii)

    Articles in CiNii:1

    • Application of Highly-Doped Si Single-Electron Transistors to an Exclusive-NOR Operation (2004)
  • Kitade Tetsuya ID: 9000258503448

    Tohoku Resional Bureau, Ministry of Land, Infrastructure and Transport (2004 from CiNii)

    Articles in CiNii:1

    • Centrifuge model tests on clay grounds improved by partly or fully penetrated sand compaction piles (2004)
  • Kitade Tetsuya ID: 9000267780050

    Articles in CiNii:1

    • Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands (2005)
  • Kitade Tetsuya ID: 9000267780082

    Articles in CiNii:1

    • Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor (2005)
  • Kitade Tetsuya ID: 9000401733356

    Articles in CiNii:1

    • Application of Highly-Doped Si Single-Electron Transistors to an Exclusive-NOR Operation (2004)
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