Search Results1-20 of  45

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  • KAWANO Takanori ID: 9000005541536

    Department of Electro Photo Optics, Tokai University (2000 from CiNii)

    Articles in CiNii:16

    • High peak power pulse generation of the Chemical Oxygen・Iodine Laser with an External Magnetic Field (1999)
    • Parametric study of a mist jet-singlet oxygen generator (2000)
    • Effect of light enviroment on mental working efficiency (2000)
  • KITANO Tomohisa ID: 9000004778618

    NEC Electronics Corporation (2009 from CiNii)

    Articles in CiNii:5

    • Effect of Gettering on Device Characteristics (1996)
    • Reliability Improvement by Adopting Ti-barrier Metal for Porous Low-k ILD Structure (2007)
    • A Cost-Conscious 32nm CMOS Platform Technology with Advanced Single Exposure Lithography and Gate-First Metal Gate/High-K Process (2009)
  • KITANO Tomohisa ID: 9000005681303

    Fundamental Reseach Laboratories, NEC Corporation (1987 from CiNii)

    Articles in CiNii:1

    • Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities (1987)
  • KITANO Tomohisa ID: 9000022201486

    Articles in CiNii:1

    • Special Issue on Key of High Yield of ULSI. New Technique to Examine the Surface of Sillicon Wafer for ULSI. (1992)
  • KITANO Tomohisa ID: 9000107382835

    ULSI Device Development Laboratories, NEC Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Suppression of Titanium, Disilicide Formation on Heavily Arsenic-Doped Silicon Substrate (1996)
  • Kitano Tomohisa ID: 9000003409356

    NEC Corporation, Fundamental Research Laboratories (1986 from CiNii)

    Articles in CiNii:2

    • 2p-N-5 PF水平多軸精密ディフラクトメータ (1985)
    • Local Strain in LEC-Grown GaAs Crystals (1986)
  • Kitano Tomohisa ID: 9000252758955

    Fundamental Research Laboratories, NEC Corporation (1985 from CiNii)

    Articles in CiNii:1

    • X-Ray Topography Examination of Lattice Distortions in LEC-Grown GaAs Single Crystals (1985)
  • Kitano Tomohisa ID: 9000252758979

    Semiconductor Research Laboratory, Fundamental Research Laboratories, NEC corporations (1985 from CiNii)

    Articles in CiNii:1

    • Synchrotron Plane Wave X-Ray Topography of GaAs with a Separate (+,+) Monochro-Collimator (1985)
  • Kitano Tomohisa ID: 9000252760887

    Fundamental Research Laboratories, NEC Corporation (1988 from CiNii)

    Articles in CiNii:1

    • Appropriate Pulling Axis Orientation to Suppress Slip Dislocation Generation during Czochralski Growth of Semiconductor Crystals (1988)
  • Kitano Tomohisa ID: 9000252767375

    ULSI Device Development Laboratories, NEC Corporation (1993 from CiNii)

    Articles in CiNii:1

    • Silicon Surface Imperfection Probed with a Novel X-Ray Diffraction Technique and Its Influence on the Reliability of Thermally Grown Silicon Oxide (1993)
  • Kitano Tomohisa ID: 9000252959126

    Fundamental Research Laboratories, NEC Corporation (1986 from CiNii)

    Articles in CiNii:1

    • The Effect of Reduction of Dislocation Density on the Lattice Distortions in Undoped GaAs Single Crystal Grown by LEC Method (1986)
  • Kitano Tomohisa ID: 9000252959445

    Fundamental Research Laboratories, NEC Corporation (1986 from CiNii)

    Articles in CiNii:1

    • Generation Rule of the Slip Dislocation in LEC GaAs Crystal (1986)
  • Kitano Tomohisa ID: 9000252959604

    Fundamental Research Laboratories, NEC Corporation (1986 from CiNii)

    Articles in CiNii:1

    • Generation of Slip Dislocations during Czochralski Growth of Semiconductor Crystals Pullen in a 〈111〉 Axis (1986)
  • Kitano Tomohisa ID: 9000252961150

    Fundamental Reseach Laboratories, NEC Corporation (1987 from CiNii)

    Articles in CiNii:1

    • Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities (1987)
  • Kitano Tomohisa ID: 9000252961389

    Fundamental Research Laboratories, NEC Corporation (1987 from CiNii)

    Articles in CiNii:1

    • Synchrotron Plane Wave X-Ray Topography of 6 inch Diameter Si Crystal (1987)
  • Kitano Tomohisa ID: 9000252965091

    Fundamental Research Laboratories, NEC Corporation (1988 from CiNii)

    Articles in CiNii:1

    • Fluorescence EXAFS Study of Zn-Doped LEC InP Crystal (1988)
  • Kitano Tomohisa ID: 9000258131033

    ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Suppression of Titanium Disilicide Formation on Heavily Arsenic-Doped Silicon Substrate. (1996)
  • Kitano Tomohisa ID: 9000258135528

    ULSI Device Development Laboratories, NEC Corporation 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Fluorine-Related Defects in BF+2-Implanted Si Probed by Monoenergetic Positron Beams. (1997)
  • Kitano Tomohisa ID: 9000258141108

    ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy. (1998)
  • Kitano Tomohisa ID: 9000392695257

    Articles in CiNii:1

    • Generation Rule of the Slip Dislocation in LEC GaAs Crystal (1986)
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