Search Results1-20 of  77

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  • Kondow Masahiko ID: 9000024979733

    Articles in CiNii:1

    • Reduction of S-parameter by the introduction of nitrogen in GaNAs: positron annihilation and photoluminescence spectroscopy study (Special issue: Solid state devices and materials) (2011)
  • Kondow Masahiko ID: 9000025070058

    Articles in CiNii:1

    • Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs (Special Issue : Solid State Devices and Materials (1)) (2012)
  • KONDOW Masahiko ID: 9000000621659

    RWCP Optoelectronics Hitachi Laboratory, c/o Central Research Laboratory, Hitachi Ltd. (2001 from CiNii)

    Articles in CiNii:1

    • Present State of Long-Wavelength Vertical-Cavity Surface-Emitting Lasers (2001)
  • KONDOW Masahiko ID: 9000004785389

    Hitachi Central Research Laboratory:Graduate school of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:13

    • Novel nitride materials : III-(N, V) alloy semiconductors (1996)
    • Lasing properties on GaInNAs MQW lasers grown by impurity-reduced MBE (2004)
    • Lasing properties on GaInNAs MQW lasers grown by impurity-reduced MBE (2004)
  • KONDOW Masahiko ID: 9000004821331

    RWCP Optical Interconnection Hitachi Laboratory co Central Research Laboratory, Hitachi, Ltd. (2002 from CiNii)

    Articles in CiNii:13

    • Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode (1998)
    • Index-Guide GaInNAs Laser Diode for Optical Communications (1997)
    • Recent Progress in GlaInNAs Laser (2000)
  • KONDOW Masahiko ID: 9000004915731

    RWCP Optoelectronics Hitachi Lab. (1997 from CiNii)

    Articles in CiNii:3

    • GaInNAs Laser Diodes (1997)
    • CW operation of GaInNAs laser diodes at room temperature (1996)
    • Characteristic Parameters of GaInNAs Laser Diodes (1996)
  • KONDOW Masahiko ID: 9000006461050

    RWCP Optical Interconnection Hitachi Laboratory, c-o Central Research Laboratory, Hitachi, Ltd. (2002 from CiNii)

    Articles in CiNii:1

    • Characterization of the Refractive Index of Lateral-Oxidation-Formed Al_xO_y by Spectroscopic Ellipsometry (2002)
  • KONDOW Masahiko ID: 9000107307300

    Central Research Laboratory, Hitachi, Ltd. (2003 from CiNii)

    Articles in CiNii:1

    • Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing (2003)
  • KONDOW Masahiko ID: 9000107340880

    Department of Quantum Electronic Device Engineering, Osaka University (2010 from CiNii)

    Articles in CiNii:1

    • Infrared Absorption Spectrum of InNP (2010)
  • KONDOW Masahiko ID: 9000107341806

    Central Research Laboratory, Hitachi, Ltd (2005 from CiNii)

    Articles in CiNii:1

    • Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs (2005)
  • KONDOW Masahiko ID: 9000107350457

    RWCP Optoelectronics Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd. (2001 from CiNii)

    Articles in CiNii:1

    • In situ Annealing of GaInNAs up to 600℃ (2001)
  • KONDOW Masahiko ID: 9000107363955

    Central Research Laboratory, Hitachi Ltd. (2004 from CiNii)

    Articles in CiNii:1

    • Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy (2004)
  • KONDOW Masahiko ID: 9000107377740

    Central Research Laboratory, Hitachi, Ltd. (2003 from CiNii)

    Articles in CiNii:1

    • Infrared Absorption Spectrum of GaInNAs (2003)
  • KONDOW Masahiko ID: 9000107382879

    RWCP Optoelectronics Hitachi Laboratory, c/o central Research Laboratory, Hitachi, Ltd. (1996 from CiNii)

    Articles in CiNii:1

    • GaInNAs:A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance (1996)
  • KONDOW Masahiko ID: 9000107383637

    Articles in CiNii:1

    • A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours (1999)
  • KONDOW Masahiko ID: 9000253326504

    Central Research Laboratory, Hitachi, Ltd. (1996 from CiNii)

    Articles in CiNii:1

    • Novel nitride materials: III-(N, V) alloy semiconductors (1996)
  • KONDOW Masahiko ID: 9000253699329

    RWCP Optoelectronics Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd. (2001 from CiNii)

    Articles in CiNii:1

    • Present State of Long-Wavelength Vertical-Cavity Surface-Emitting Lasers. (2001)
  • KONDOW Masahiko ID: 9000258616683

    RWCP Optical Interconnection Hitachi Laboratory, c/o Central Research Laboratory (1998 from CiNii)

    Articles in CiNii:1

    • Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaInNAs/GaAs Single Quantum Well Laser Diode (1998)
  • Kondow Masahiko ID: 9000018958847

    Articles in CiNii:1

    • Effects of Plasma Processes on the Characteristics of Optical Device Structures Based on GaAs (2012)
  • Kondow Masahiko ID: 9000024962650

    Articles in CiNii:1

    • Effect of plasma conditions on the growth of GaNAs by plasma-assisted molecular-beam epitaxy (2009)
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