Search Results1-8 of  8

  • KOSUGI Masaaki ID: 9000004779708

    Research Institute of Elecfronics, Shizuoka Universiry (1999 from CiNii)

    Articles in CiNii:1

    • C-V Characteristics of Ultrathin SOI Structures Having a Buried Tunnel Oxide (1999)
  • KOSUGI Masaaki ID: 9000004910124

    Hokkaido Institute of Technology (1996 from CiNii)

    Articles in CiNii:2

    • Examination of a Variable Block Sequence Image Compression Format for Hokkaido Integrated Telecommunication Network (1996)
    • Examination of an Image Data Compression and a Transmission Method for Hokkaido Integrated Telecommunication Network (1995)
  • KOSUGI Masaaki ID: 9000006418931

    Department of Computers and Systems Engineering Tokyo Denki University (2009 from CiNii)

    Articles in CiNii:11

    • Data Message Transmission in MANET with Uni-Directional Links (2007)
    • Data Message Transmission in MANET with Uni-Directional Links (2007)
    • High Throughput Data Message Transmission in MANET by Selection of Reliable Message Transmission Protocol in Each Wireless Link (2008)
  • KOSUGI Masaaki ID: 9000107395840

    Research Institute of Electronics, Shizuoka University (2001 from CiNii)

    Articles in CiNii:1

    • Concentration of Electric Field near Si Dot/Thermally-Grown SiO_2 Interface (2001)
  • KOSUGI Masaaki ID: 9000270882277

    ICT Network Cloud Research Group, Research Laboratories, NTT DOCOMO, INC. (2014 from CiNii)

    Articles in CiNii:1

    • B-15-18 A Study on the Impact of a Unit Failure against Different Configurations of Virtual Mobile Nodes (2014)
  • KOSUGI Masaaki ID: 9000315139369

    Research Laboratories, NTT DOCOMO, INC. (2015 from CiNii)

    Articles in CiNii:1

    • Availability analysis of NFV-based Mobile Network System (2015)
  • Kosugi Masaaki ID: 9000256579202

    慶応義塾大学医学部歯科口腔外科学教室 (1978 from CiNii)

    Articles in CiNii:1

    • 担癌動物における抗腫瘍剤Adriamycinの口腔組織内分布について (1978)
  • Kosugi Masaaki ID: 9000401697045

    Articles in CiNii:1

    • Concentration of Electric Field near Si Dot/Thermally-Grown SiO2Interface (2001)
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