Search Results1-20 of  169

  • Koukitu Akinori ID: 9000024932718

    Articles in CiNii:1

    • Preparation of a freestanding AIN substrate by hydride vapor phase epitaxy at 1230℃ using (111)Si as a starting substrate (2007)
  • KOUKITU Akinori ID: 1000010111626

    Articles in CiNii:102

    • Investigation of Buffer Iayer of Cubic GaN Epitaxial Films on (100)GaAs Grown by Metalorganic-Hydrogen Chloride Vapor-Phase Epitaxy (1996)
    • Atomic-layer epitaxy of III-V alloy semiconductors (1994)
    • Structure Determination of Nitrogen in Silicon (2001)
  • KOUKITU Akinori ID: 9000001508182

    Department of Applied Chemistry, Tokyo University of Agriculture and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Nonlinear Magneto-Optical Studies of Magnetic Nano Structures Fabricated by Damascene Technique Using Electron Beam Lithography (2003)
  • KOUKITU Akinori ID: 9000005531552

    Faculty of Technology, Tokyo University of Agriculture and Technology (1977 from CiNii)

    Articles in CiNii:1

    • Thermodynamic Analysis of the Vapour Growth of GaAs: The Inert Gas-Hydrogen Mixed Carrier System (1977)
  • KOUKITU Akinori ID: 9000005587392

    Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology (1998 from CiNii)

    Articles in CiNii:1

    • In Situ Optical Monitoring of Hydrogen Chemisorption on the GaAs(111)B Ga Surface (1998)
  • KOUKITU Akinori ID: 9000005732821

    Faculty of Technology, Tokyo University of Agriculture and Technology (1979 from CiNii)

    Articles in CiNii:1

    • The Electrical Properties of VPE GaAs Grown by the Single Flat Temperature Zone Method (1979)
  • KOUKITU Akinori ID: 9000018185544

    Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology (2009 from CiNii)

    Articles in CiNii:1

    • Halide Vapor Phase Epitaxy of Mg_xZn_<1-x>O Layers on Zn-Polar ZnO Substrates (2009)
  • KOUKITU Akinori ID: 9000045932859

    Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology (1996 from CiNii)

    Articles in CiNii:1

    • Thermodynamic Analysis of In_xGa_<1-x>N Alloy Composition Grown by Metalorganic Vapor Phase Epitaxy (1996)
  • KOUKITU Akinori ID: 9000107314660

    Department of Applied Chemistry, Tokyo University of Agriculture and Technology (2004 from CiNii)

    Articles in CiNii:1

    • Study of Pulse Laser Assisted Metalorganic Vapor Phase Epitaxy of InGaN with Large Indium Mole Fraction (2004)
  • KOUKITU Akinori ID: 9000107327738

    Department of Applied Chemistry, Tokyo University of Agriculture and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Influence of Lattice Constraint from InN and GaN Substrate on Relationship between Solid Composition of In_<x>Ga_<1-x>N film and Input Mole Ratio during Molecular Beam Epitaxy (2003)
  • KOUKITU Akinori ID: 9000107354634

    Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology (2006 from CiNii)

    Articles in CiNii:1

    • Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy (2006)
  • KOUKITU Akinori ID: 9000107356473

    Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Theoretical Investigation of Arsenic Desorption from GaAs(001) Surfaces under an Atmosphere of Hydrogen (2003)
  • KOUKITU Akinori ID: 9000107383487

    Graduate School of Engineering, Tokyo University of Agriculture and Technology (2005 from CiNii)

    Articles in CiNii:1

    • Growth of MnGeP_2 Thin Films by Molecular Beam Epitaxy (2005)
  • KOUKITU Akinori ID: 9000248242296

    Department of Applied Chemistry, Tokyo University of Agriculture and Technology (2012 from CiNii)

    Articles in CiNii:1

    • Structural and Optical Properties of Carbon-Doped AIN Substrates Grown by Hydride Vapor Phase Epitaxy Using AIN Substrates Prepared by Physical Vapor Transport (2012)
  • KOUKITU Akinori ID: 9000248242399

    Denartment of Applied Chemistry, Tokyo University of Agriculture and Technology (2012 from CiNii)

    Articles in CiNii:1

    • Deep-Ultraviolet Light-Emitting Diodes Fabricated on AIN Substrates Prepared by Hydride Vapor Phase Epitaxy (2012)
  • KOUKITU Akinori ID: 9000265571186

    Department of Applied Chemistry, Tokyo University of Agriculture and Technology (2013 from CiNii)

    Articles in CiNii:1

    • Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AIN Substrates Prepared by Hydride Vapor Phase Epitaxy (2013)
  • Koukitu Akinori ID: 9000003435095

    Department of Applied Chemistry, Tokyo University of Agriculture and Technology (2016 from CiNii)

    Articles in CiNii:23

    • Future Nano-materials (2004)
    • Magnetic properties and micro-magnetic analysis of nano-scale magnetic dot arrays embedded in Si wafers (2004)
    • Fabrication and micro-magnetic analysis in nano-scale magnetic dot arrays (2004)
  • Koukitu Akinori ID: 9000025045130

    Articles in CiNii:1

    • Self-assembled growth and characterization of Mn[x]P nanowires (Special issue: Material and information sciences in high technologies) (2008)
  • Koukitu Akinori ID: 9000058234934

    Articles in CiNii:1

    • Solid Composition Control of MgxZn1-xO in Halide Vapor Phase Epitaxy (2010)
  • Koukitu Akinori ID: 9000060418175

    Articles in CiNii:1

    • Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy (2011)
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