Search Results1-20 of  47

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  • Kurishima Kenji ID: 9000025016987

    Articles in CiNii:1

    • 0.25-um-Emmer InP heterojunction bipolar transistors with a thin ledge structure (Special issue: Solid state devices and materials) (2010)
  • KURISHIMA Kenji ID: 9000000279559

    NTT System Electronics Laboratories (1998 from CiNii)

    Articles in CiNii:1

    • InGaAs-based heterojunction bipolar transistor (1998)
  • KURISHIMA Kenji ID: 9000004811159

    NTT Photonics Laboratories, NTT Corporation (2012 from CiNii)

    Articles in CiNii:22

    • DC Characteristics of InP HBTs under High-Temperature and Bias Stress (2001)
    • Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's De-Hydrogenated by an Anneal after Emitter Mesa Formation (1997)
    • Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density (2004)
  • KURISHIMA Kenji ID: 9000107336779

    Articles in CiNii:1

    • Highly reliable InP-based HBTs with a ledge structure operating at current density over 2mA/μm^2 (2005)
  • KURISHIMA Kenji ID: 9000107357109

    NTT Photonics Laboratories, NTT Corporation (2012 from CiNii)

    Articles in CiNii:1

    • A 60-GS/s Digital-to-Analog Converter using 0.5-μm InP HBTs for Optical Communication Systems (2012)
  • KURISHIMA Kenji ID: 9000107357657

    NTT Photonics Laboratories, NTT Corporation (2012 from CiNii)

    Articles in CiNii:1

    • Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition (2012)
  • KURISHIMA Kenji ID: 9000107358076

    NTT Photonics Laboratories, NTT Corporation (2012 from CiNii)

    Articles in CiNii:1

    • A 60-GS/s Digital-to-Analog Converter using 0.5-μm InP HBTs for Optical Communication Systems (2012)
  • KURISHIMA Kenji ID: 9000107358279

    NTT Photonics Laboratories, NTT Corporation (2012 from CiNii)

    Articles in CiNii:1

    • Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition (2012)
  • KURISHIMA Kenji ID: 9000107358679

    NTT Photonics Laboratories, NTT Corporation (2012 from CiNii)

    Articles in CiNii:1

    • Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (2012)
  • KURISHIMA Kenji ID: 9000107358902

    NTT Photonics Laboratories, NTT Corporation (2012 from CiNii)

    Articles in CiNii:1

    • Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (2012)
  • KURISHIMA Kenji ID: 9000107388820

    NTT Photonics Laboratories, NTT Corporation (2004 from CiNii)

    Articles in CiNii:1

    • High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors (2004)
  • KURISHIMA Kenji ID: 9000240538730

    NTT Photonics Laboratories, NTT Corporation (2012 from CiNii)

    Articles in CiNii:1

    • Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity (2012)
  • KURISHIMA Kenji ID: 9000252845801

    NTT System Electronics Laboratories (1998 from CiNii)

    Articles in CiNii:1

    • InGaAs-based heterojunction bipolar transistor (1998)
  • KURISHIMA Kenji ID: 9000258736373

    NTT Photonics Laboratories (2013 from CiNii)

    Articles in CiNii:1

    • Fabrication Technology of Through Substrate Ground Via for High-Speed InP-ICs (2013)
  • KURISHIMA Kenji ID: 9000317152122

    NTT Device Technology Laboratories, NTT Corporation (2016 from CiNii)

    Articles in CiNii:1

    • An InP-Based 27-GHz-Bandwidth Limiting TIA IC Designed to Suppress Undershoot and Ringing in Its Output Waveform (2016)
  • KURISHIMA Kenji ID: 9000322101751

    NTT Device Technology Laboratories, NTT Corporation (2016 from CiNii)

    Articles in CiNii:1

    • Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz <i>f</i><sub>max</sub> and 5-V Breakdown Voltage (2016)
  • Kurishima Kenji ID: 9000020215762

    NTT Photonics Laboratories, NTT Corporation (2012 from CiNii)

    Articles in CiNii:1

    • A low-power wideband InP-HBT 2<sup>7</sup>-1 PRBS generator (2012)
  • Kurishima Kenji ID: 9000046772283

    Articles in CiNii:1

    • High-Speed Uni-Traveling-Carrier Photodiodes Monolithically Integrated with InP Heterojunction Bipolar Transistors using Be Ion Implantation (2006)
  • Kurishima Kenji ID: 9000252763992

    NTT LSI Laboratories (1991 from CiNii)

    Articles in CiNii:1

    • InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si (1991)
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