Search Results1-7 of  7

  • Kurosawa Etsuo ID: 9000025030657

    Articles in CiNii:1

    • Extended scalability of HfON/SiON gate stack down to 0.57nm equivalent oxide thickness with high carrier mobility by post-deposition annealing (Special issue: Solid state devices and materials) (2009)
  • KUROSAWA Etsuo ID: 9000002015270

    Semiconductor Leading Edge Technologies Inc. (Selete) (2007 from CiNii)

    Articles in CiNii:1

    • Experimental study on improvement of the Fermi-level pinning in metal/HfSiON gate stack (2007)
  • Kurosawa Etsuo ID: 9000025037800

    Articles in CiNii:1

    • Thermally unstable ruthenium oxide gate electrodes in metal/high-k gate stacks (2008)
  • Kurosawa Etsuo ID: 9000401778041

    Articles in CiNii:1

    • 2009-04-20 (2009)
  • Kurosawa Etsuo ID: 9000401778057

    Articles in CiNii:1

    • Extended Scalability of HfON/SiON Gate Stack Down to 0.57 nm Equivalent Oxide Thickness with High Carrier Mobility by Post-Deposition Annealing (2009)
  • Kurosawa Etsuo ID: 9000401988045

    Articles in CiNii:1

    • NiGe/n+-Ge junctions with ultralow contact resistivity formed by two-step P-ion implantation (2014)
  • Kurosawa Etsuo ID: 9000401989505

    Articles in CiNii:1

    • Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS (2014)
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